Abstract: A method and apparatus for applying focus correction to an E-beam or charged particle system to compensate for wafer warp and mask tilt. In an electron beam system including a registration system which measures the position of four registration marks with the beam and calculates the apparent magnification error of a given chip, means are also provided for using magnification and rotation error information to calculate a height error factor and to apply a compensating current to a dynamic focusing coil of the electron beam to move the effective beam focal plane to a position which matches the wafer or mask plane at each chip site.

Abstract: A square shaped beam of charged particles is passed over a registration mark in the surface of a semiconductor wafer. A signal produced by a diode detector that is responsive to backscattered electrons will peak when the beam passes over each of the edges of the registration mark. The signal is differentiated; and the resultant signal is filtered and amplified to provide information regarding the position of the beam with respect to the wafer. If more than one diode detector is used, the signals are added just before or just after the differentiation.