Patents by Inventor Hanqing Li
Hanqing Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240155646Abstract: Provided are an information transmission method, apparatus and device, and a storage medium. The method includes detecting a physical downlink control channel (PDCCH) on multiple consecutive orthogonal frequency-division multiplexing (OFDM) symbols of one or more slots.Type: ApplicationFiled: November 10, 2021Publication date: May 9, 2024Inventors: Hanqing XU, Xincai LI, Li TIAN, Ling YANG
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Publication number: 20240153257Abstract: A monitoring system based on a digital converter station includes a first monitoring terminal deployed at a first-level monitoring side, a second monitoring terminal deployed at a second-level monitoring side, and a third monitoring terminal deployed at a third-level monitoring side; the monitoring terminal at each level includes a communication module, a human-machine interaction module, a device status monitoring module, a device alarm management module, a video fusion processing module, and a data transmission adjustment and control module.Type: ApplicationFiled: January 11, 2024Publication date: May 9, 2024Applicants: STATE GRID CORPORATION OF CHINA, STATE GRID ECONOMIC AND TECHNOLOGICAL RESEARCH INSTITUTE CO., LTD, NR ELECTRIC CO., LTD., XJ GROUP CORPORATION, NARI TECHNOLOGY CO., LTD, BEIJING SGITG ACCENTURE INFORMATION TECHNOLOGY CENTER CO., LTD., HUAWEI TECHNOLOGY CO., LTDInventors: Wei JIN, Qing WANG, Xianshan GUO, Jun LYU, Siyuan LIU, Xiang ZHANG, Yanguo WANG, Zhanguo ZHANG, Haifeng WANG, Chong TONG, Ming LI, Wei CHENG, Ning ZHAO, Zhou CHEN, Xiaojun HOU, Hanqing ZHAO
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Patent number: 11973478Abstract: Apparatuses include (among other components) a first gain device connected to receive an initial voltage, a second gain device in series with the first gain device and connected to receive output of the first gain device, differential gain devices connected to receive outputs from the first gain device and the second gain device (the differential gain devices provide opposite voltage outputs from the apparatus) and high-frequency compensation feed-forward paths connected to the first gain device and the second gain device.Type: GrantFiled: September 2, 2021Date of Patent: April 30, 2024Assignee: GlobalFoundries U.S. Inc.Inventors: Xu Zhang, Mingming Zhang, Hanqing Zhao, Lukun Zhai, Dan Liu, Xuan Li
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Publication number: 20240129108Abstract: A data processing method performed by a first device includes: generating, in response to first service data satisfying a data uploading condition, a first bit array corresponding to the first service data; encrypting the first bit array through a data key to obtain a ciphertext bit array, the data key being generated by a second device in a data intersection application run in a trusted execution environment of the second device; and transmitting the ciphertext bit array to a blockchain node for forwarding to a second device, for the second device to decrypt, in the data intersection application through the data key, the ciphertext bit array to obtain the first bit array.Type: ApplicationFiled: December 4, 2023Publication date: April 18, 2024Inventors: Qucheng LIU, Rui GUO, Jun LIANG, Like SHU, Zongyou WANG, Hu LAN, Yang LU, Hanqing LIU, Jun LI, Hui ZHANG, Gengliang ZHU, Kaixuan NIE, Yifang SHI, Zhiyong LIAO, Yangjun HUANG
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Publication number: 20240067788Abstract: Provided is a method for preparing a crosslinked polyvinyl chloride structure foamed material by using a physical foaming agent, comprising: melting and mixing a polyvinyl chloride resin, a modified resin, an isocyanate, an anhydride, a nucleating agent and a heat stabilizer to obtain a blank; immersing the blank into a foaming gas for foaming to obtain a foamed body; and subjecting the foamed body to crosslinking curing to obtain a crosslinked polyvinyl chloride structure foamed material. According to the present invention, the crosslinked polyvinyl chloride structure foamed material is prepared by means of a brand-new process route, and the composition and proportion of the PVC resin and other raw materials can be adjusted in a wide range; and carbon dioxide or nitrogen is used for foaming. Further provided is a crosslinked polyvinyl chloride structure foamed material.Type: ApplicationFiled: November 2, 2021Publication date: February 29, 2024Applicant: CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY, CHINESE ACADEMY OF SCIENCEInventors: Tao TANG, Jiangan YOU, Zhiwei JIANG, Jian XUE, Hanqing JIANG, Jian QIU, Haiping XING, Minggang LI
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Publication number: 20210008142Abstract: Disclosed are a preparation method and applications of a spinosin-Na monomer of Ziziphi Spinosae Semen. The preparation method includes: pulverizing Ziziphi Spinosae Semen; hydrolyzing the powder with an acidic hydrolysis solution; neutralizing the hydrolysate; extracting the supernatant with ethyl acetate several times to produce a crude extract; and separating the crude extract sequentially using macroporous resin and HPLC to produce the spinosin-Na monomer of Ziziphi Spinosae Semen with a good water solubility and a purity greater than 98%. The spinosin-Na monomer prepared herein is capable of significantly inhibiting the proliferation of tumor cells, so that it can be applied in the preparation of a functional food and/or medicine for preventing and/or treating tumors.Type: ApplicationFiled: January 12, 2020Publication date: January 14, 2021Inventors: Zhuoyu LI, Shuhua SHAN, Guisheng SONG, Yue XIE, Hanqing LI, Bin JIA, Jiangying SHI
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Patent number: 8601331Abstract: A non-volatile memory device includes a block remapping system that offsets an input block address by the addresses of non-functional blocks to provide an output block address that is used to address the memory device. The system generates the output block addresses by, in effect, adding to the input block address the addresses of all non-functional blocks of memory that are between an initial address and the output block address. The system performs this function be comparing the input block address to the address of any defective block. If the address of the defective block is less than or equal to the input block address, the addresses of all defective blocks starting at the block address are added to the input block address. The system then iteratively performs this process using each output block address generated by the system in place of the input block address.Type: GrantFiled: May 20, 2011Date of Patent: December 3, 2013Assignee: Micron Technology, Inc.Inventors: Dean Nobunaga, Hanqing Li
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Publication number: 20110219260Abstract: A non-volatile memory device includes a block remapping system that offsets an input block address by the addresses of non-functional blocks to provide an output block address that is used to address the memory device. The system generates the output block addresses by, in effect, adding to the input block address the addresses of all non-functional blocks of memory that are between an initial address and the output block address. The system performs this function be comparing the input block address to the address of any defective block. If the address of the defective block is less than or equal to the input block address, the addresses of all defective blocks starting at the block address are added to the input block address. The system then iteratively performs this process using each output block address generated by the system in place of the input block address.Type: ApplicationFiled: May 20, 2011Publication date: September 8, 2011Applicant: Micron Technology, Inc.Inventors: DEAN NOBUNAGA, Hanqing Li
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Patent number: 7958439Abstract: A non-volatile memory device includes a block remapping system that offsets an input block address by the addresses of non-functional blocks to provide an output block address that is used to address the memory device. The system generates the output block addresses by, in effect, adding to the input block address the addresses of all non-functional blocks of memory that are between an initial address and the output block address. The system performs this function be comparing the input block address to the address of any defective block. If the address of the defective block is less than or equal to the input block address, the addresses of all defective blocks starting at the block address are added to the input block address. The system then iteratively performs this process using each output block address generated by the system in place of the input block address.Type: GrantFiled: May 26, 2010Date of Patent: June 7, 2011Assignee: Micron Technology, Inc.Inventors: Dean Nobunaga, Hanqing Li
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Publication number: 20100235679Abstract: A non-volatile memory device includes a block remapping system that offsets an input block address by the addresses of non-functional blocks to provide an output block address that is used to address the memory device. The system generates the output block addresses by, in effect, adding to the input block address the addresses of all non-functional blocks of memory that are between an initial address and the output block address. The system performs this function be comparing the input block address to the address of any defective block. If the address of the defective block is less than or equal to the input block address, the addresses of all defective blocks starting at the block address are added to the input block address. The system then iteratively performs this process using each output block address generated by the system in place of the input block address.Type: ApplicationFiled: May 26, 2010Publication date: September 16, 2010Applicant: Micron Technology, Inc.Inventors: DEAN NOBUNAGA, Hanqing Li
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Patent number: 7743303Abstract: A non-volatile memory device includes a block remapping system that offsets an input block address by the addresses of non-functional blocks to provide an output block address that is used to address the memory device. The system generates the output block addresses by, in effect, adding to the input block address the addresses of all non-functional blocks of memory that are between an initial address and the output block address. The system performs this function be comparing the input block address to the address of any defective block. If the address of the defective block is less than or equal to the input block address, the addresses of all defective blocks starting at the block address are added to the input block address. The system then iteratively performs this process using each output block address generated by the system in place of the input block address.Type: GrantFiled: January 22, 2007Date of Patent: June 22, 2010Assignee: Micron Technology, Inc.Inventors: Dean Nobunaga, Hanqing Li
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Publication number: 20080177933Abstract: A non-volatile memory device includes a block remapping system that offsets an input block address by the addresses of non-functional blocks to provide an output block address that is used to address the memory device. The system generates the output block addresses by, in effect, adding to the input block address the addresses of all non-functional blocks of memory that are between an initial address and the output block address. The system performs this function be comparing the input block address to the address of any defective block. If the address of the defective block is less than or equal to the input block address, the addresses of all defective blocks starting at the block address are added to the input block address. The system then iteratively performs this process using each output block address generated by the system in place of the input block address.Type: ApplicationFiled: January 22, 2007Publication date: July 24, 2008Applicant: Micron Technology, Inc.Inventors: Dean Nobunaga, Hanqing Li