Patents by Inventor Hanqing Li

Hanqing Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240155646
    Abstract: Provided are an information transmission method, apparatus and device, and a storage medium. The method includes detecting a physical downlink control channel (PDCCH) on multiple consecutive orthogonal frequency-division multiplexing (OFDM) symbols of one or more slots.
    Type: Application
    Filed: November 10, 2021
    Publication date: May 9, 2024
    Inventors: Hanqing XU, Xincai LI, Li TIAN, Ling YANG
  • Publication number: 20240153257
    Abstract: A monitoring system based on a digital converter station includes a first monitoring terminal deployed at a first-level monitoring side, a second monitoring terminal deployed at a second-level monitoring side, and a third monitoring terminal deployed at a third-level monitoring side; the monitoring terminal at each level includes a communication module, a human-machine interaction module, a device status monitoring module, a device alarm management module, a video fusion processing module, and a data transmission adjustment and control module.
    Type: Application
    Filed: January 11, 2024
    Publication date: May 9, 2024
    Applicants: STATE GRID CORPORATION OF CHINA, STATE GRID ECONOMIC AND TECHNOLOGICAL RESEARCH INSTITUTE CO., LTD, NR ELECTRIC CO., LTD., XJ GROUP CORPORATION, NARI TECHNOLOGY CO., LTD, BEIJING SGITG ACCENTURE INFORMATION TECHNOLOGY CENTER CO., LTD., HUAWEI TECHNOLOGY CO., LTD
    Inventors: Wei JIN, Qing WANG, Xianshan GUO, Jun LYU, Siyuan LIU, Xiang ZHANG, Yanguo WANG, Zhanguo ZHANG, Haifeng WANG, Chong TONG, Ming LI, Wei CHENG, Ning ZHAO, Zhou CHEN, Xiaojun HOU, Hanqing ZHAO
  • Patent number: 11973478
    Abstract: Apparatuses include (among other components) a first gain device connected to receive an initial voltage, a second gain device in series with the first gain device and connected to receive output of the first gain device, differential gain devices connected to receive outputs from the first gain device and the second gain device (the differential gain devices provide opposite voltage outputs from the apparatus) and high-frequency compensation feed-forward paths connected to the first gain device and the second gain device.
    Type: Grant
    Filed: September 2, 2021
    Date of Patent: April 30, 2024
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Xu Zhang, Mingming Zhang, Hanqing Zhao, Lukun Zhai, Dan Liu, Xuan Li
  • Publication number: 20240129108
    Abstract: A data processing method performed by a first device includes: generating, in response to first service data satisfying a data uploading condition, a first bit array corresponding to the first service data; encrypting the first bit array through a data key to obtain a ciphertext bit array, the data key being generated by a second device in a data intersection application run in a trusted execution environment of the second device; and transmitting the ciphertext bit array to a blockchain node for forwarding to a second device, for the second device to decrypt, in the data intersection application through the data key, the ciphertext bit array to obtain the first bit array.
    Type: Application
    Filed: December 4, 2023
    Publication date: April 18, 2024
    Inventors: Qucheng LIU, Rui GUO, Jun LIANG, Like SHU, Zongyou WANG, Hu LAN, Yang LU, Hanqing LIU, Jun LI, Hui ZHANG, Gengliang ZHU, Kaixuan NIE, Yifang SHI, Zhiyong LIAO, Yangjun HUANG
  • Publication number: 20240067788
    Abstract: Provided is a method for preparing a crosslinked polyvinyl chloride structure foamed material by using a physical foaming agent, comprising: melting and mixing a polyvinyl chloride resin, a modified resin, an isocyanate, an anhydride, a nucleating agent and a heat stabilizer to obtain a blank; immersing the blank into a foaming gas for foaming to obtain a foamed body; and subjecting the foamed body to crosslinking curing to obtain a crosslinked polyvinyl chloride structure foamed material. According to the present invention, the crosslinked polyvinyl chloride structure foamed material is prepared by means of a brand-new process route, and the composition and proportion of the PVC resin and other raw materials can be adjusted in a wide range; and carbon dioxide or nitrogen is used for foaming. Further provided is a crosslinked polyvinyl chloride structure foamed material.
    Type: Application
    Filed: November 2, 2021
    Publication date: February 29, 2024
    Applicant: CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY, CHINESE ACADEMY OF SCIENCE
    Inventors: Tao TANG, Jiangan YOU, Zhiwei JIANG, Jian XUE, Hanqing JIANG, Jian QIU, Haiping XING, Minggang LI
  • Publication number: 20210008142
    Abstract: Disclosed are a preparation method and applications of a spinosin-Na monomer of Ziziphi Spinosae Semen. The preparation method includes: pulverizing Ziziphi Spinosae Semen; hydrolyzing the powder with an acidic hydrolysis solution; neutralizing the hydrolysate; extracting the supernatant with ethyl acetate several times to produce a crude extract; and separating the crude extract sequentially using macroporous resin and HPLC to produce the spinosin-Na monomer of Ziziphi Spinosae Semen with a good water solubility and a purity greater than 98%. The spinosin-Na monomer prepared herein is capable of significantly inhibiting the proliferation of tumor cells, so that it can be applied in the preparation of a functional food and/or medicine for preventing and/or treating tumors.
    Type: Application
    Filed: January 12, 2020
    Publication date: January 14, 2021
    Inventors: Zhuoyu LI, Shuhua SHAN, Guisheng SONG, Yue XIE, Hanqing LI, Bin JIA, Jiangying SHI
  • Patent number: 8601331
    Abstract: A non-volatile memory device includes a block remapping system that offsets an input block address by the addresses of non-functional blocks to provide an output block address that is used to address the memory device. The system generates the output block addresses by, in effect, adding to the input block address the addresses of all non-functional blocks of memory that are between an initial address and the output block address. The system performs this function be comparing the input block address to the address of any defective block. If the address of the defective block is less than or equal to the input block address, the addresses of all defective blocks starting at the block address are added to the input block address. The system then iteratively performs this process using each output block address generated by the system in place of the input block address.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: December 3, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Dean Nobunaga, Hanqing Li
  • Publication number: 20110219260
    Abstract: A non-volatile memory device includes a block remapping system that offsets an input block address by the addresses of non-functional blocks to provide an output block address that is used to address the memory device. The system generates the output block addresses by, in effect, adding to the input block address the addresses of all non-functional blocks of memory that are between an initial address and the output block address. The system performs this function be comparing the input block address to the address of any defective block. If the address of the defective block is less than or equal to the input block address, the addresses of all defective blocks starting at the block address are added to the input block address. The system then iteratively performs this process using each output block address generated by the system in place of the input block address.
    Type: Application
    Filed: May 20, 2011
    Publication date: September 8, 2011
    Applicant: Micron Technology, Inc.
    Inventors: DEAN NOBUNAGA, Hanqing Li
  • Patent number: 7958439
    Abstract: A non-volatile memory device includes a block remapping system that offsets an input block address by the addresses of non-functional blocks to provide an output block address that is used to address the memory device. The system generates the output block addresses by, in effect, adding to the input block address the addresses of all non-functional blocks of memory that are between an initial address and the output block address. The system performs this function be comparing the input block address to the address of any defective block. If the address of the defective block is less than or equal to the input block address, the addresses of all defective blocks starting at the block address are added to the input block address. The system then iteratively performs this process using each output block address generated by the system in place of the input block address.
    Type: Grant
    Filed: May 26, 2010
    Date of Patent: June 7, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Dean Nobunaga, Hanqing Li
  • Publication number: 20100235679
    Abstract: A non-volatile memory device includes a block remapping system that offsets an input block address by the addresses of non-functional blocks to provide an output block address that is used to address the memory device. The system generates the output block addresses by, in effect, adding to the input block address the addresses of all non-functional blocks of memory that are between an initial address and the output block address. The system performs this function be comparing the input block address to the address of any defective block. If the address of the defective block is less than or equal to the input block address, the addresses of all defective blocks starting at the block address are added to the input block address. The system then iteratively performs this process using each output block address generated by the system in place of the input block address.
    Type: Application
    Filed: May 26, 2010
    Publication date: September 16, 2010
    Applicant: Micron Technology, Inc.
    Inventors: DEAN NOBUNAGA, Hanqing Li
  • Patent number: 7743303
    Abstract: A non-volatile memory device includes a block remapping system that offsets an input block address by the addresses of non-functional blocks to provide an output block address that is used to address the memory device. The system generates the output block addresses by, in effect, adding to the input block address the addresses of all non-functional blocks of memory that are between an initial address and the output block address. The system performs this function be comparing the input block address to the address of any defective block. If the address of the defective block is less than or equal to the input block address, the addresses of all defective blocks starting at the block address are added to the input block address. The system then iteratively performs this process using each output block address generated by the system in place of the input block address.
    Type: Grant
    Filed: January 22, 2007
    Date of Patent: June 22, 2010
    Assignee: Micron Technology, Inc.
    Inventors: Dean Nobunaga, Hanqing Li
  • Publication number: 20080177933
    Abstract: A non-volatile memory device includes a block remapping system that offsets an input block address by the addresses of non-functional blocks to provide an output block address that is used to address the memory device. The system generates the output block addresses by, in effect, adding to the input block address the addresses of all non-functional blocks of memory that are between an initial address and the output block address. The system performs this function be comparing the input block address to the address of any defective block. If the address of the defective block is less than or equal to the input block address, the addresses of all defective blocks starting at the block address are added to the input block address. The system then iteratively performs this process using each output block address generated by the system in place of the input block address.
    Type: Application
    Filed: January 22, 2007
    Publication date: July 24, 2008
    Applicant: Micron Technology, Inc.
    Inventors: Dean Nobunaga, Hanqing Li