Abstract: In a differential read amplifier of a bipolar memory module for the evaluation of a difference of read currents in a first and second bit line, an additional current generated by the read amplifier is fed into the bit line conducting the higher read current. As a result, a time period is reduced in which high interference susceptibility exists during successive read accesses to different memory cells with the same information content. Thus, read accesses can proceed in shorter time intervals.

Abstract: A write-read drive arrangement for a bipolar semiconductor memory, arranged in the form of a matrix, and comprising a preliminary stage which can be driven by way of a right-end and data input, and which has two information outputs and a status output which is fed with operating state signals, and an intermediate and end stage which are connected following the preliminary stage and logically link a read-out amplifier to the bit lines of the individual storage cells and to the outputs of the preliminary stage is particularly characterized in that a circuit arrangement which connects the outputs of the preliminary stage to a first signal line and a second signal line of the end stage is provided as an intermediate stage and that each line of the storage matrix is assigned a maximum of one switching transistor which can be operated by way of the signal lines and logically links the bit lines to the inputs of the read-out amplifier.

Abstract: A circuit arrangement is disclosed for several storage cells arranged on one bipolar memory block. The storage cells are addressable by bit and word lines. By a write-read control circuit and bit lines information content of the storage cells is changeable. A regulating circuit is provided having an additional simulation storage cell identical to the other storage cells. A reference potential connects to the regulating circuit and regulates the storage cells in accordance with the respective operating mode. This is accomplished by means of a potential impressed onto the write-read control circuit in such fashion that, independent of the manufacturing related variations of the characteristic curves of the current voltage characteristics of the storage cells, a cell current passing through the storage cell when a storage cell is actuated is established at a predetermined value.