Abstract: In a procedure for measuring the concentration of a target gas, a gas sensor is provided whose sensor signal at constant temperature is dependent on a target gas concentration and has a lower measurement sensitivity in a first modulation range than in a second modulation range. The position of the modulation ranges is dependent on the temperature. The temperature of the gas sensor is controlled so that the sensor signal is essentially independent of the target gas concentration and lies within the second modulation range. The temperature of the gas sensor is then a measurement for the target gas concentration.

Abstract: In a procedure for measuring the concentration of a target gas, a gas sensor is provided whose sensor signal at constant temperature is dependent on a target gas concentration and has a lower measurement sensitivity in a first modulation range than in a second modulation range. The position of the modulation ranges is dependent on the temperature. The temperature of the gas sensor is controlled so that the sensor signal is essentially independent of the target gas concentration and lies within the second modulation range. The temperature of the gas sensor is then a measurement for the target gas concentration.

Abstract: An interconnecting structure for a semiconductor integrated circuit and a method for manufacturing said interconnecting structure. The interconnecting structure comprises a top layer, a bottom layer, and a dielectric isolation layer. The top layer completely covers and encloses the bottom layer. The dielectric isolation layer is disposed between the top layer and the bottom layer. At least one contact opening is formed through the top layer of the structure, thereby exposing a selected region of said bottom layer. A contact is formed on the selected region of the bottom layer.

Abstract: A semiconductor structure for creating resistor networks, particularly ladder networks, has resistive sections made of semiconductor material and metal contact areas. A continuous semiconducting resistor strip is provided as a primary arm. Along this continuous primary arm, metal contact areas which contact the resistor strip at the side are provided in accordance with the desired resistor ratio and in order to form corresponding series resistors. In a ladder network, shunt arms have one end connected directly to the long side of the primary arm via the semiconductor material. At the other end of each of the shunt arms, a respective metal contact area is provided.