Abstract: A power semiconductor module includes a power semiconductor die arranged on a power substrate, a housing enclosing the power semiconductor die and the power substrate, wherein an interior volume formed by the housing is divided by interior walls into at least a first compartment and a second compartment, wherein the power semiconductor die is arranged within the first compartment, a first encapsulation material encapsulating the power semiconductor die and at least partially filling the first compartment, and a second encapsulation material different from the first encapsulation material, the second encapsulation material encapsulating the first encapsulation material and at least partially filling the second compartment, wherein the first encapsulation material is arranged within the first compartment but not within the second compartment.

Abstract: A semiconductor module includes a power electronics carrier including a metallization layer disposed on an electrically insulating substrate, a power semiconductor die mounted on the power electronics carrier, a housing that surrounds an interior volume over the power electronics carrier, a volume of electrically insulating encapsulant that fills the interior volume and encapsulates the power semiconductor die, and a pressure compensation element disposed on or within the electrically insulating encapsulant, wherein the electrically insulating encapsulant is a liquid, wherein the semiconductor module forms an impermeable seal that contains the volume of electrically insulating encapsulant, and wherein the pressure compensation element is configured to maintain the electrically insulating encapsulant at a substantially constant pressure during thermal expansion and thermal contraction of the electrically insulating encapsulant.

Abstract: A semiconductor module includes a power electronics carrier including a structured metallization layer disposed on an electrically insulating substrate, a power semiconductor die mounted on the power electronics carrier, a housing that surrounds an interior volume over the power electronics carrier, a reinforcing structure contained within the interior volume and including a textured surface that is accessible by fluid, a volume of curable encapsulant disposed within the interior volume and encapsulating the power semiconductor die, wherein the reinforcing structure is embedded within the volume of curable encapsulant such that the textured surface adheres to the encapsulant, and wherein the reinforcing structure has a tensile strength that is greater than a tensile strength of the curable encapsulant.

Abstract: A semiconductor power module comprises an insulating interposer comprising an insulative layer disposed between a lower metal layer, a first upper metal layer and a second upper metal layer, a semiconductor transistor die disposed on the first upper metal layer, an electrical connector connecting the semiconductor transistor die with the second upper metal layer, a housing enclosing the insulating interposer and the semiconductor transistor die, a first potting material covering at least selective portions of the semiconductor transistor die and the electrical connector; and a second potting material applied onto the first potting material, wherein the first and second potting materials are different from each other.

Abstract: A semiconductor substrate includes a dielectric insulation layer and a first metallization layer attached to the dielectric insulation layer. The dielectric insulation layer includes a first material having a thermal conductivity of between 25 and 180 W/mK, and an insulation strength of between 15 and 50 kV/mm, and an electrically conducting or semiconducting second material evenly distributed within the first material.

Abstract: A semiconductor substrate includes a dielectric insulation layer and a first metallization layer attached to the dielectric insulation layer. The dielectric insulation layer includes a first material having a thermal conductivity of between 25 and 180 W/mK, and an insulation strength of between 15 and 50 kV/mm, and an electrically conducting or semiconducting second material evenly distributed within the first material.

Abstract: One aspect relates to a power semiconductor module. The module includes a module housing, a substrate, and a semiconductor chip attached to the substrate. The semiconductor chip is disposed in the module housing. A dielectric first encapsulation is disposed in the module housing, in physical contact with both the semiconductor chip and the substrate and has a first modulus of elasticity. A dielectric second encapsulation is disposed in the module housing and has a second modulus of elasticity. The first encapsulation is a polymer and disposed between the substrate and the second encapsulation. The semiconductor chip is disposed between the first encapsulation and the substrate. Further, the first modulus of elasticity is greater than the second modulus of elasticity.

Abstract: One aspect relates to a power semiconductor module. The module includes a module housing, a substrate, and a semiconductor chip attached to the substrate. The semiconductor chip is disposed in the module housing. A dielectric first encapsulation is disposed in the module housing, in physical contact with both the semiconductor chip and the substrate and has a first modulus of elasticity. A dielectric second encapsulation is disposed in the module housing and has a second modulus of elasticity. The first encapsulation is a polymer and disposed between the substrate and the second encapsulation. The semiconductor chip is disposed between the first encapsulation and the substrate.

Abstract: A power semiconductor module includes a circuit carrier including an insulation carrier having a top side on which a metallization layer is arranged. A power semiconductor chip is arranged on a side of the metallization layer facing away from the insulation carrier, and which has on a top side of the power semiconductor chip facing away from the circuit carrier an upper chip metallization composed of copper or a copper alloy having a thickness of greater than or equal to 1 ?m. An electrical connection conductor composed of copper or a copper alloy is connected to the upper chip metallization at a connecting location. A potting compound extends from the circuit carrier to at least over the top side of the power semiconductor chip and completely covers the top side of the power semiconductor chip, encloses the connection conductor at least in the region of the connecting location, and has a penetration of less than or equal to 30 according to DIN ISO 2137 at a temperature of 25° C.

Abstract: A module includes a base plate, a substrate having a first metallized side attached to the base plate and an opposing second metallized side, a power semiconductor die attached to the second metallized side of the substrate at a first side of the die, a first plurality of electrical connections between the second metallized side of the substrate and a second side of the die opposing the first side of the die, and a housing attached to a periphery of the base plate. The housing and base plate enclose the die and the first electrical connections. A second plurality of electrical connections extend from the second metallized side of the substrate through the housing to provide external electrical connections for the module. A parylene coating prevents gases and humidity from reaching the die, the first electrical connections, and the first metallized side of the substrate.

Abstract: A power semiconductor module includes a circuit carrier including an insulation carrier having a top side on which a metallization layer is arranged. A power semiconductor chip is arranged on a side of the metallization layer facing away from the insulation carrier, and which has on a top side of the power semiconductor chip facing away from the circuit carrier an upper chip metallization composed of copper or a copper alloy having a thickness of greater than or equal to 1 ?m. An electrical connection conductor composed of copper or a copper alloy is connected to the upper chip metallization at a connecting location. A potting compound extends from the circuit carrier to at least over the top side of the power semiconductor chip and completely covers the top side of the power semiconductor chip, encloses the connection conductor at least in the region of the connecting location, and has a penetration of less than or equal to 30 according to DIN ISO 2137 at a temperature of 25° C.

Abstract: An apparatus and method for producing semiconductor modules is disclosed. One embodiment provides for bonding at least one semiconductor die onto a carrier including a support film strip, the support film having applied an adhesive layer to one of its surfaces to attach the semiconductor die, and a pressure tool to press the semiconductor die and the support film strip onto the carrier to permanently contact the at least one semiconductor die to the carrier.

Abstract: An apparatus and method for producing semiconductor modules is disclosed. One embodiment provides for bonding at least one semiconductor die onto a carrier including a support film strip, the support film having applied an adhesive layer to one of its surfaces to attach the semiconductor die, and a pressure tool to press the semiconductor die and the support film strip onto the carrier to permanently contact the at least one semiconductor die to the carrier.

Abstract: The invention relates to a method for coating a metal bar (1), in particular a steel strap by hot dipping consisting in vertically passing the metal bar (1) through a container (2) containing a molten coating metal (3) and through a guiding channel (4) which is connected in series and has a predefined height (H). In order to retain the coating metal (2) in the container (3), an electromagnetic field is produced at the level of said guiding channel (4) by means of at least two inductors (5) which are arranged on two sides of the metal bar (1). In order to calm the coating bath, a predefined volume flow (Q) of the coating metal (2) is directed towards the guiding channel (4) at the level of the vertical extension (H) thereof. The inventive device for coating a metal bar by hot dipping is also disclosed.

Abstract: The invention relates to a method for melt dip coating a metal strip (1), especially a steel strip (1a), which is guided through a coating station (4). The metal strip (1) is coated with a coating metal (3), the metal strip (1) is centrally maintained in a guide channel (8) in an electromagnetic sealing field (13) which seals the guide channel (8) from below and guides the metal strip (1) laterally, counter to ferromagnetic attraction, through a corrector field (14). The sealing field (13) is embodied as an electromagnetic guiding field (10), as a blocking field (11) or as a pump field (12) in order to select adequate lateral sealing when any particular sealing field (13) is used. Several corrector fields (14) are arranged in a distributed manner in a selected configuration, whereby the position and number thereof are determined individually at least according to the various widths of the metal strip (1).

Abstract: The invention relates to a method and device for descaling and/or cleaning a metal casting (1), particularly a hot-rolls trip made of normal steel or of stainless steel. According to the inventive method, the metal casting (1) is guided in a direction of conveyance (R) through a device (2), inside of which it is subjected to a plasma descaling and/or a plasma cleaning. In order to improve the result of the descaling or of the cleaning of the metal casting, the invention provides that before the device (2) for plasma descaling and/or plasma cleaning, in the direction of conveyance (R), the metal casting (1) is subjected to a process that imparts a high degree of flatness to the metal casting (1).

Abstract: A section straightening machine is operated by a method which involves passing the structural sections through the array of straightening tools. Section straightening forces are applied to adjustable shafts carrying the tools and adjusters at the service sides of the shaft applying forces acting counter to the section straightening forces.