Abstract: A film is sputter-deposited on an essentially plane, extended surface of a substrate which has recesses therein, namely at least one of grooves, of holes, of bores, of vias, of trenches. So as to establish on one hand a homogeneous thickness distribution of the film along the addressed surface of the substrate and, on the other hand, a thick film deposition within the recesses, sputter deposition is performed first at a large distance between a sputter surface of a target and the addressed surface of the substrate and then at a reduced distance between the addressed surfaces.

Abstract: For optimizing the yield of atomized-off material on a magnetron atomization source, a process space, on the source side, is predominantly walled by the atomization surface of the target body. The magnetron atomization source has a target body with a mirror-symmetrical, concavely constructed atomization surface with respect to at least one plane and a magnetic circuit arrangement operable to generate a magnetic field over the atomization surface. The magnetic circuit arrangement includes an anode arrangement, a receiving frame which extends around an edge of the target body and is electrically insulated with respect thereto. The receiving frame has a receiving opening for at least one workpiece to be coated. The magnetron source can be used to provide storage disks, such as CDs, with an atomization coating.

Abstract: A magnetron sputtering source and a method of use thereof on which the sputtering source has at least two toroidal magnetron electron taps each defining a maximum of a magnetic field strength component in a radial direction along a surface of the sputtering source. Thereby, from each one of a ring zone on a first smaller radius R1F and a second larger radius R2F, a plane of the workpiece in a holder facing the sputtering source has a corresponding distance d1 and d2. A value d assumes all possible values of d1 and d2. In particular, 0.8≦(R2F−R1F)/d≦3.0 and preferably 1.0≦(R2F−R1F)/d≦2.2 The arrangement defines a sputtering geometry with the process space with a defined dual concentric narrow plasma discharge with correspondingly defined concentrated plasma inclusion.

Abstract: For optimizing the yield of atomized-off material on a magnetron atomization source, a process space, on the source side, is predominantly walled by the atomization surface of the target body. The magnetron atomization source has a target body with a mirror-symmetrical, concavely constructed atomization surface with respect to at least one plane and a magnetic circuit arrangement operable to generate a magnetic field over the atomization surface. The magnetic circuit arrangement includes an anode arrangement, a receiving frame which extends around an edge of the target body and is electrically insulated with respect thereto. The receiving frame has a receiving opening for at least one workpiece to be coated. The magnetron source can be used to provide storage disks, such as CDs, with an atomization coating.

Abstract: A magnetron sputtering source and a method of use thereof on which the sputtering source has at least two toroidal magnetron electron taps each defining a maximum of a magnetic field strength component in a radial direction along a surface of the sputtering source. Thereby, from each one of a ring zone on a first smaller radius R.sub.1F and a second larger radius R.sub.2F, a plane of the workpiece in a holder facing the sputtering source has a corresponding distance d.sub.1 and d.sub.2. A value d assumes all possible values of d1 and d2. In particular,0.8.ltoreq.(R.sub.2F -R.sub.1F)/d.ltoreq.3.0and preferably1.0.ltoreq.(R.sub.2F -R.sub.1F)/d.ltoreq.2.2.The arrangement defines a sputtering geometry with the process space essentially at very short target-to-substrate distance and with a defined dual concentric narrow plasma discharge with correspondingly defined concentrated plasma inclusion, whereby the substrate damage is reduced and high process economies are achieved.

Abstract: For optimizing the yield of atomized-off material on a magnetron atomization source, a process space, on the source side, is predominantly walled by the atomization surface of the target body. The magnetron atomization source has a target body with a mirror-symmetrical, concavely constructed atomization surface with respect to at least one plane and a magnetic circuit arrangement operable to generate a magnetic field over the atomization surface. The magnetic circuit arrangement includes an anode arrangement, a receiving frame which extends around an edge of the target body and is electrically insulated with respect thereto. The receiving frame has a receiving opening for at least one workpiece to be coated. The magnetron source can be used to provide storage disks, such as CDs, with an atomization coating.

Abstract: For the transmission of heat under vacuum conditions to a workpiece, a carrier is used with gas outlets and gas return openings distributed on its surface. A dynamic gas layer is thus formed between the carrier and the workpiece wherein the gas effects thermal conduction between the carrier and the workpiece. The gas outlets terminate in a distribution space implemented as a groove and has at least on slot shaped aperture extending substantially around most of the carrier periphery.

Abstract: An elevating table has a housing with a workpiece support movably guided in an upward and downward direction by which a disk-shaped workpiece is transportable into a processing chamber of a vacuum installation. To correct the position of the workpiece placed by a machine into the workpiece support, as well as for securing the workpiece during transport, holding elements are disposed on opposite sides of the elevating table. These comprise in each instance a rod at the end of a jib which is disposed on a shaft rotatably supported in the elevating table and which is rotatable by a motor within a pivotal range in order to bring the holding element into one of two different positions. With two holding elements disposed next to each other on one side of the elevating table and one holding element disposed on the opposite side of the elevating table, the position of the workpiece on the workpiece support can be corrected.

Abstract: For the transmission of heat under vacuum conditions to a workpiece, a carrier is used with gas outlets and gas return openings distributed on its surface. A dynamic gas layer is thus formed between the carrier and the workpiece wherein the gas effects thermal conduction between the carrier and the workpiece. The gas outlets terminate in a distribution space implemented as a groove.

Abstract: An installation for the transmission of heat energy between a carrier and a small plate receives a gas between the small plate and the carrier in order to improve the transmission of heat. The same gas serves to press the small plate against the carrier by means of a removable cover. When, for example, in a vacuum process, plate-like objects, such as semiconductors are to be processed, they are frequently heated up to elevated temperatures. Here it is suitable to provide the heat energy in a controlled homogeneous way. In other cases the small plates have to be cooled down in a controlled and steady way. The invention provides an apparatus for both processes.