Patents by Inventor Hans J. Eisler

Hans J. Eisler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanocrystal structures
    Patent number: 8121162
    Abstract: A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
    Type: Grant
    Filed: November 21, 2008
    Date of Patent: February 21, 2012
    Assignee: Massachusetts Institute of Technology
    Inventors: Hans J. Eisler, Vikram C. Sundar, Michael E. Walsh, Victor I. Klimov, Moungi G. Bawendi, Henry I. Smith
  • Nanocrystal structures
    Publication number: 20090253224
    Abstract: A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
    Type: Application
    Filed: November 21, 2008
    Publication date: October 8, 2009
    Applicant: Massachusetts Institute of Technology
    Inventors: Hans J. Eisler, Vikram C. Sundar, Michael E. Walsh, Victor I. Klimov, Moungi G. Bawendi, Henry I. Smith
  • Nanocrystal structures
    Patent number: 7470473
    Abstract: A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
    Type: Grant
    Filed: November 9, 2006
    Date of Patent: December 30, 2008
    Assignee: Massachusetts Institute of Technology
    Inventors: Hans J. Eisler, Vikram C. Sundar, Michael E. Walsh, Victor I. Klimov, Moungi G. Bawendi, Henry I. Smith
  • Semiconductor nanocrystal composite
    Patent number: 7190870
    Abstract: A composite including a plurality of semiconductor nanocrystals distributed in a metal oxide matrix can be used as an optical amplifier, a waveguide or a laser.
    Type: Grant
    Filed: September 17, 2002
    Date of Patent: March 13, 2007
    Assignee: Massachusetts Institute of Technology
    Inventors: Vikram C. Sundar, Hans J. Eisler, Moungi G. Bawendi
  • Nanocrystal structures
    Patent number: 7150910
    Abstract: A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II–VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
    Type: Grant
    Filed: November 15, 2002
    Date of Patent: December 19, 2006
    Assignee: Massachusetts Institute of Technology
    Inventors: Hans J. Eisler, Vikram C. Sundar, Michael E. Walsh, Victor I. Klimov, Moungi G. Bawendi, Henry I. Smith
  • Nanocrystal structures
    Publication number: 20040004982
    Abstract: A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
    Type: Application
    Filed: November 15, 2002
    Publication date: January 8, 2004
    Inventors: Hans J. Eisler, Vikram C. Sundar, Michael E. Walsh, Victor I. Klimov, Moungi G. Bawendi, Henry I. Smith
  • Semiconductor nanocrystal composite
    Publication number: 20030142944
    Abstract: A composite including a plurality of semiconductor nanocrystals distributed in a metal oxide matrix can be used as an optical amplifier, a waveguide or a laser.
    Type: Application
    Filed: September 17, 2002
    Publication date: July 31, 2003
    Inventors: Vikram C. Sundar, Hans J. Eisler, Moungi G. Bawendi