Patents by Inventor Hans-Jürgen Lugauer
Hans-Jürgen Lugauer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11923656Abstract: A laser device is provided which comprises a common waveguide layer and a plurality of laser bodies, wherein each of the laser bodies has an active region configured for generating coherent electromagnetic radiation. The laser bodies are arranged side by side on the common waveguide layer, wherein the laser bodies are directly adjacent to the common waveguide layer. In particular, the laser bodies are configured to be phase-coupled to each other via the waveguide layer during operation of the laser device. Furthermore, a method for producing such a phase-coupled laser device is provided.Type: GrantFiled: August 9, 2019Date of Patent: March 5, 2024Assignee: OSRAM OLED GmbHInventors: Bruno Jentzsch, Alexander Behres, Hans-Jürgen Lugauer
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Patent number: 11764330Abstract: In an embodiment, an optoelectronic semiconductor component includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, wherein a respective semiconductor material of the first and second semiconductor layers are each a compound semiconductor material including a first, a second and a third composition element, and a second contact region configured to electrically contact the second semiconductor layer, wherein the first semiconductor layer is patterned and arranged over the second semiconductor layer, wherein the second contact region is arranged between patterned regions of the first semiconductor layer, wherein the second contact region comprises a second metallic contact layer and a semiconductor contact layer between the second metallic contact layer and the second semiconductor layer, wherein a semiconductor material of the semiconductor contact layer includes the first, second and third composition elements, and wherein a concentrationType: GrantFiled: August 9, 2019Date of Patent: September 19, 2023Assignee: OSRAM OLED GmbHInventors: Mohammad Tollabi Mazraehno, Mariel Grace Jama, Hans-Jürgen Lugauer, Alexander Pfeuffer
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Publication number: 20210288221Abstract: In an embodiment, an optoelectronic semiconductor component includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, wherein a respective semiconductor material of the first and second semiconductor layers are each a compound semiconductor material including a first, a second and a third composition element, and a second contact region configured to electrically contact the second semiconductor layer, wherein the first semiconductor layer is patterned and arranged over the second semiconductor layer, wherein the second contact region is arranged between patterned regions of the first semiconductor layer, wherein the second contact region comprises a second metallic contact layer and a semiconductor contact layer between the second metallic contact layer and the second semiconductor layer, wherein a semiconductor material of the semiconductor contact layer includes the first, second and third composition elements, and wherein a concentrationType: ApplicationFiled: August 9, 2019Publication date: September 16, 2021Inventors: Mohammad Tollabi Mazraehno, Mariel Grace Jama, Hans-Jürgen Lugauer, Alexander Pfeuffer
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Publication number: 20210273400Abstract: A laser device is provided which comprises a common waveguide layer and a plurality of laser bodies, wherein each of the laser bodies has an active region configured for generating coherent electromagnetic radiation. The laser bodies are arranged side by side on the common waveguide layer, wherein the laser bodies are directly adjacent to the common waveguide layer. In particular, the laser bodies are configured to be phase-coupled to each other via the waveguide layer during operation of the laser device. Furthermore, a method for producing such a phase-coupled laser device is provided.Type: ApplicationFiled: August 9, 2019Publication date: September 2, 2021Inventors: Bruno Jentzsch, Alexander Behres, Hans-Jürgen Lugauer
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Patent number: 11069835Abstract: An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.Type: GrantFiled: March 16, 2018Date of Patent: July 20, 2021Assignee: OSRAM OLED GMBHInventors: Adrian Stefan Avramescu, Tansen Varghese, Martin Straßburg, Hans-Jürgen Lugauer, Sönke Fündling, Jana Hartmann, Frederik Steib, Andreas Waag
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Publication number: 20200028029Abstract: An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.Type: ApplicationFiled: March 16, 2018Publication date: January 23, 2020Inventors: Adrian Stefan Avramescu, Tansen Varghese, Martin Straßburg, Hans-Jürgen Lugauer, Sönke Fündling, Jana Hartmann, Frederik Steib, Andreas Waag
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Patent number: 10074769Abstract: A method of producing an optoelectronic component includes providing a carrier having a carrier surface, a first lateral section of the carrier surface being raised relative to a second lateral section of the carrier surface; arranging an optoelectronic semiconductor chip having a first surface and a second surface on the carrier surface, wherein the first surface faces toward the carrier surface; and forming a molded body having an upper side facing toward the carrier surface and a lower side opposite the upper side, the semiconductor chip being at least partially embedded in the molded body.Type: GrantFiled: February 6, 2014Date of Patent: September 11, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Thomas Schwarz, Hans-Jürgen Lugauer, Jürgen Moosburger, Stefan Illek, Tansen Varghese, Matthias Sabathil
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Patent number: 9853186Abstract: The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other,—the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.Type: GrantFiled: May 2, 2016Date of Patent: December 26, 2017Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Matthias Sabathil, Andreas Plöβl, Hans-Jürgen Lugauer, Alexander Linkov, Patrick Rode
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Patent number: 9812619Abstract: The present application relates to a method of producing an optoelectronic component. An optoelectronic is produced by this method. An optoelectronic semiconductor chip has a first surface. A sacrificial layer is deposited on the first surface. The optoelectronic semiconductor chip is at least partially embedded in a mold body and the sacrificial layer is removed.Type: GrantFiled: January 15, 2014Date of Patent: November 7, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Jürgen Moosburger, Thomas Schwarz, Hans-Jürgen Lugauer, Tansen Varghese, Stefan Illek
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Patent number: 9786824Abstract: A method can be used for producing an optoelectronic component. An optoelectronic semiconductor chip has a front face and a rear face. A sacrificial layer is applied to the rear face. A molded body is formed the optoelectronic semiconductor chip being at least partially embedded in the molded body. The sacrificial layer is removed.Type: GrantFiled: January 15, 2014Date of Patent: October 10, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Stefan Illek, Hans-Jürgen Lugauer, Jürgen Moosburger, Thomas Schwarz, Tansen Varghese
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Publication number: 20160247966Abstract: The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other,—the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.Type: ApplicationFiled: May 2, 2016Publication date: August 25, 2016Inventors: Matthias SABATHIL, Andreas PLÖßL, Hans-Jürgen LUGAUER, Alexander LINKOV, Patrick RODE
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Patent number: 9331243Abstract: The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other, —the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.Type: GrantFiled: March 7, 2012Date of Patent: May 3, 2016Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Matthias Sabathil, Andreas Plöβl, Hans-Jürgen Lugauer, Alexander Linkov, Patrick Rode
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Publication number: 20160013380Abstract: The present application relates to a method of producing an optoelectronic component. An optoelectronic is produced by this method. An optoelectronic semiconductor chip has a first surface. A sacrificial layer is deposited on the first surface. The optoelectronic semiconductor chip is at least partially embedded in a mold body and the sacrificial layer is removed.Type: ApplicationFiled: January 15, 2014Publication date: January 14, 2016Inventors: Jürgen Moosburger, Thomas Schwarz, Hans-Jürgen Lugauer, Tansen Varghese, Stefan Illek
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Publication number: 20160005936Abstract: A method can be used for for producing an optoelectronic component. An optoelectronic semiconductor chip has a front face and a rear face. A sacrificial layer is applied to the rear face. A molded body is formed the optoelectronic semiconductor chip being at least partially embedded in the molded body. The sacrificial layer is removed.Type: ApplicationFiled: January 15, 2014Publication date: January 7, 2016Inventors: Stefan Illek, Hans-Jürgen Lugauer, Jürgen Moosburger, Thomas Schwarz, Tansen Varghese
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Publication number: 20150380602Abstract: A method of producing an optoelectronic component includes providing a carrier having a carrier surface, a first lateral section of the carrier surface being raised relative to a second lateral section of the carrier surface; arranging an optoelectronic semiconductor chip having a first surface and a second surface on the carrier surface, wherein the first surface faces toward the carrier surface; and forming a molded body having an upper side facing toward the carrier surface and a lower side opposite the upper side, the semiconductor chip being at least partially embedded in the molded body.Type: ApplicationFiled: February 6, 2014Publication date: December 31, 2015Applicant: OSRAM Opto Semiconductore GmbHInventors: Thomas Schwarz, Hans-Jürgen Lugauer, Jürgen Moosburger, Stefan Illek, Tansen Varghese, Matthias Sabathil
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Publication number: 20140283903Abstract: A photovoltaic semiconductor chip comprising a semiconductor body which comprises a semiconductor layer sequence with an active region provided to generate electrical energy. The active region is formed between a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type different from the first conductivity type. The semiconductor body is disposed on a carrier body. The first semiconductor layer is disposed on the side of the second semiconductor layer facing away from the carrier body. The semiconductor body comprises a recess which extends from the carrier body through the second semiconductor layer. A first connection structure is disposed between the carrier body and the semiconductor body and is connected in an electrically conductive manner in the recess to the first semiconductor layer.Type: ApplicationFiled: September 27, 2012Publication date: September 25, 2014Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Norwin von Malm, Hans-Juergen Lugauer
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Publication number: 20140070246Abstract: The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a shorter wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other,—the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.Type: ApplicationFiled: March 7, 2012Publication date: March 13, 2014Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Matthias Sabathil, Andreas Plößl, Hans-Jürgen Lugauer, Alexander Linkov, Patrick Rode
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Patent number: 8598596Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one doped functional layer having at least one dopant and at least one codopant, wherein the semiconductor layer sequence includes a semiconductor material having a lattice structure, one selected from the dopant and the codopant is an electron acceptor and the other an electron donor, the codopant is bonded to the semiconductor material and/or arranged at interstitial sites, and the codopant at least partly forms no bonding complexes with the dopant.Type: GrantFiled: October 12, 2009Date of Patent: December 3, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Vincent Grolier, Lutz Hoeppel, Hans-Jürgen Lugauer, Martin Strassburg, Andreas Biebersdorf
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Patent number: 8592840Abstract: An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least one AlxGa1-xN-based intermediate layer where 0<x?1, which is situated at a same side of the active zone as the n-doped layer sequence.Type: GrantFiled: December 20, 2010Date of Patent: November 26, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Matthias Peter, Tobias Meyer, Nikolaus Gmeinwieser, Tetsuya Taki, Hans-Jürgen Lugauer, Alexander Walter
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Patent number: 8581264Abstract: A semiconductor body includes an n-conductive semiconductor layer and a p-conductive semiconductor layer. The p-conductive semiconductor layer contains a p-dopant and the n-conductive semiconductor layer an n-dopant and a further dopant.Type: GrantFiled: May 28, 2009Date of Patent: November 12, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Martin Strassburg, Hans-Juergen Lugauer, Vincent Grolier, Berthold Hahn, Richard Floeter