Abstract: An auxiliary drive wheel taxi system for driving an aircraft autonomously without reliance on engine operation during ground travel is designed for installation in an aircraft location other than on nose or main landing gear components. The auxiliary drive wheel taxi system may be mounted in an integral housing located internally or externally on an aircraft's body at a selected location relative to main or nose landing gears and includes one or more auxiliary drive wheels mounted on an extensible strut adapted to extend from and retract into the housing. An electric, hydraulic, or pneumatic non-engine drive means controllable to provide torque required to rotate the drive wheel and drive the aircraft at desired taxi speeds may be mounted in a selected location to drive the auxiliary drive wheel. The manually or automatically controllable auxiliary taxi system is operable only to drive the aircraft during taxi.

Abstract: An auxiliary drive wheel taxi system for driving an aircraft autonomously without reliance on engine operation during ground travel is designed for installation in an aircraft location other than on nose or main landing gear components. The auxiliary drive wheel taxi system may be mounted in an integral housing located internally or externally on an aircraft's body at a selected location relative to main or nose landing gears and includes one or more auxiliary drive wheels mounted on an extensible strut adapted to extend from and retract into the housing. An electric, hydraulic, or pneumatic non-engine drive means controllable to provide torque required to rotate the drive wheel and drive the aircraft at desired taxi speeds may be mounted in a selected location to drive the auxiliary drive wheel. The manually or automatically controllable auxiliary taxi system is operable only to drive the aircraft during taxi.

Abstract: The invention disclosed is a self-propelled aircraft undercarriage for driving an aircraft on the ground, comprising: an axle; a strut supporting said axle; at least one wheel rotatably mounted on said axle; and drive means for driving said at least one wheel; characterized in that said drive means is disk shaped and is external to said wheel. In one embodiment of the invention, said drive means is mounted on said axle between said strut and said wheel. In a second embodiment, said drive means is mounted on said axle, on the side of said wheel furthest from said strut.

Abstract: The invention disclosed is a self-propelled aircraft undercarriage for driving an aircraft on the ground, comprising: an axle; a strut supporting said axle; at least one wheel rotatably mounted on said axle; and drive means for driving said at least one wheel; characterized in that said drive means is disk shaped and is external to said wheel. In one embodiment of the invention, said drive means is mounted on said axle between said strut and said wheel. In a second embodiment, said drive means is mounted on said axle, on the side of said wheel furthest from said strut.

Abstract: The present invention(s) provide an apparatus for forming a rod, which is also sometimes referred to as an ingot or boule, which can be subsequently diced to form multiple substrates that may be utilized to form a solar cell device. The substrate may be a monocrystalline, or polycrystalline, substrate made by use of a CZ type crystal pulling technology. In one embodiment, the crystal pulling apparatus is used to form a substrate used form a solar cell device. In one embodiment, a feed material is delivered to a crucible using a vibratory feeder assembly and is heated using a novel heater assembly to allow a CZ type crystal pulling process to be performed.

Abstract: Apparatuses and methods for making a multi-crystalline silicon ingot by directional solidification comprising two or more moveable heat shields located beneath the crucible, the heat shields being opened in a controlled manner to remove heat and produce a high quality silicon ingot.

Abstract: The present invention provides a method and apparatus for lift-off of a thin layer from a crystalline substrate, preferably the layer from a silicon wafer to further form a silicon-on-insulator (SOI) sandwich structure, wherein a separation layer is formed inside a donor wafer by trapping hydrogen into a preformed, buried defect-rich layer preferably obtained by implanting a low dose of light ions through a protective layer deeply into this donor wafer. The donor wafer is then bonded to a second wafer and then split at the separation layer using a splicing apparatus. The invention also provides a “Wide Area Ion Source” (WAIS) that performs both implants in a very cost effective manner.

Abstract: The present invention provides a method and apparatus for lift-off of a thin layer from a crystalline substrate, preferably the layer from a silicon wafer to further form a silicon-on-insulator (SOI) sandwich structure, wherein a separation layer is formed inside a donor wafer by trapping hydrogen into a preformed, buried defect-rich layer preferably obtained by implanting a low dose of light ions through a protective layer deeply into this donor wafer. The donor wafer is then bonded to a second wafer and then split at the separation layer using a splicing apparatus. The invention also provides a “Wide Area Ion Source” (WAIS) that performs both implants in a very cost effective manner.

Abstract: A method for the production of silicon-on-insulator (SOI) wafers for controlling the device layer thickness variations and improvement of bonding quality at the interface of the wafers is disclosed. Using standard etched wafers, a unique sequence of process steps consisting of 2-step front side grinding, free-floating simultaneous double side polishing prepares wafers with low TTV and reduced edge roll off zones. The much smaller unbonded edge zone eliminates the requirements for edge grinding or etching in most cases. When the same s-step grinding/FFS-DSP sequence is applied after bonding and annealing of a Silicon-on-Insulator package, the resulting thickness variation in the device layer is usually smaller than what would be obtained from prior art processes.