Abstract: The invention is directed to an arrangement for the illumination of a substrate with a plurality of individually shaped, controllable particle beams, particularly for electron beam lithography in the semiconductor industry. It is the object of the invention to find a novel possibility for illuminating a substrate with a plurality of individually shaped, controllable particle beamlets which permits a high-resolution structuring of substrates with a high substrate throughput without limiting the flexibility of the applicable structure patterns or limiting the high substrate throughput due to a required flexibility.

Abstract: The invention discloses a multibeam modulator which generates a plurality of individual beams from a particle beam. The particle beam illuminates the multibeam modulator at least partially over its surface. The multibeam modulator comprises a plurality of aperture groups composed of aperture row groups. The totality of all aperture rows defines a matrix of m×n cells, where m cells form a row, and k openings are formed in each row. The density of openings within a row is inhomogeneously distributed.

Abstract: The invention is directed to an arrangement for the illumination of a substrate with a plurality of individually shaped, controllable particle beams, particularly for electron beam lithography in the semiconductor industry. It is the object of the invention to find a novel possibility for illuminating a substrate (91) with a plurality of individually shaped, controllable particle beamlets (118) which permits a high-resolution structuring of substrates with a high substrate throughput without limiting the flexibility of the applicable structure patterns or limiting the high substrate throughput due to a required flexibility.

Abstract: An illumination condenser for a particle optics projection system is disclosed. The illumination condenser is formed of a magnetic lens comprising a plurality of gaps. The magnetic lens is formed of a sequence of a plurality of partial lenses.

Abstract: A correction lens system for a particle beam projection device with at least a first magnetic lens and a second magnetic lens is disclosed. A plurality of correction lens pairs is arranged between the first magnetic lens and second magnetic lens and the particle beam.

Abstract: The invention is directed to electrostatic deflection systems for corpuscular beams which can be used particularly in microstructured and nanostructured applications in lithography installations or measuring equipment. According to the proposed object of the invention, the individual electrodes of a deflection system of this kind should permanently have and retain a very exact axially symmetric arrangement relative to one another. In the electrostatic deflection system according to the invention, rod-shaped electrodes are held in an axially symmetric arrangement in an inwardly hollow carrier through which a corpuscular beam can be directed. The carrier is formed of at least two, and at most four, carrier members which are connected to one another.

Abstract: The invention discloses a multibeam modulator which generates a plurality of individual beams from a particle beam. The particle beam illuminates the multibeam modulator at least partially over its surface. The multibeam modulator comprises a plurality of aperture groups composed of aperture row groups. The totality of all aperture rows defines a matrix of m×n cells, where m cells form a row, and k openings are formed in each row. The density of openings within a row is inhomogeneously distributed.

Abstract: An illumination condenser for a particle optics projection system is disclosed. The illumination condenser is formed of a magnetic lens comprising a plurality of gaps. The magnetic lens is formed of a sequence of a plurality of partial lenses.

Abstract: A correction lens system for a particle beam projection device with at least a first magnetic lens and a second magnetic lens is disclosed. A plurality of correction lens pairs is arranged between the first magnetic lens and second magnetic lens and the particle beam.

Abstract: The invention is directed to electrostatic deflection systems for corpuscular beams which can be used particularly in microstructured and nanostructured applications in lithography installations or measuring equipment. According to the proposed object of the invention, the individual electrodes of a deflection system of this kind should permanently have and retain a very exact axially symmetric arrangement relative to one another. In the electrostatic deflection system according to the invention, rod-shaped electrodes are held in an axially symmetric arrangement in an inwardly hollow carrier through which a corpuscular beam can be directed. The carrier is formed of at least two, and at most four, carrier members which are connected to one another.

Abstract: A method for the in-situ extraction of gas from coal seams is provided. Flow paths are produced in gas-containing coal by opening up the structure of the coal by introducing into a bore hole that is sunk into the coal at least one gas and/or liquid under pressure over a prolonged period of time at a pressure that is less than the lowest principal stress determined in a respective seam layer from which gas is to be extracted. The introduction into the bore hole is carried out with a cyclically fluctuating pressure. Gas is subsequently extracted via the bore hole.

Abstract: The invention refers to a device for electrostatic deflection of a particle beam out of a primary beam direction for the purpose of scanning a plane spanned by two coordinates X, Y, in which multiple electrodes configured as deflection wires are connected to an activation circuit and are acted upon, depending on the activation, by modifiable deflection voltages; the primary beam direction intersects the origin of coordinates X and Y, and the respective applied deflection voltage is an equivalent for the deflection of the particle beam out of the primary beam direction in the direction of coordinate X or coordinate Y. In such a device, the deflection wires are linked into deflection grids and are joined to one another and to the activation circuit in such a way that an equivalent deflection voltage is always applied to all deflection wires belonging to one and the same deflection grid.