Abstract: An imaging optical system has a plurality of mirrors which image an object field in an object plane into an image field in an image plane. The imaging optical system has a pupil obscuration. The last mirror in the beam path of the imaging light between the object field and the image field has a through-opening for the passage of the imaging light. A penultimate mirror of the imaging optical system in the beam path of the imaging light between the object field and the image field has no through-opening for the passage of the imaging light. The imaging optical system has precisely eight mirrors. The result is an imaging optical system which exhibits a favorable combination of small imaging errors, manageable production and good throughput.

Abstract: An imaging optics has a plurality of mirrors to image an object field in an object plane into an image field in an image plane. The imaging optics includes a first partial objective to image the object field onto an intermediate image, and the imaging optics includes a second partial objective to image the intermediate image onto the image field. The second partial objective includes a penultimate mirror in the beam path of imaging light between the object field and the image field, and the second partial objective includes a last mirror in the beam path. The penultimate mirror images the intermediate image onto a further intermediate image, and the last mirror images the further intermediate image onto the image field.

Abstract: A microlithography projection exposure apparatus for producing microelectronic components has at least two operating states. The microlithography projection exposure apparatus includes a reflective mask in an object plane. In the first operating state, a first partial region of the mask is illuminated by a first radiation, which has an assigned first centroid direction having a first centroid direction vector at each point of the first partial region. In the second operating state, a second partial region of the mask is illuminated by a second radiation, which has an assigned second centroid direction having a second centroid direction vector at each point of the second partial region. The first and the second partial region have a common overlap region.

Abstract: An imaging optical system has a plurality of mirrors, which via a beam path for imaging light, image an object field in an object plane into an image field in an image plane. The imaging optical system has an exit pupil obscuration. At least one of the mirrors has no opening for passage of the imaging light. The fourth to last mirror in the beam path is concave, resulting in an imaging optical system having improved imaging properties without compromise in throughput.

Abstract: A magnifying imaging optical unit has at least four mirrors to image an object field in an object plane into an image field in an image plane. An absolute value of the Petzval radius of the image field is greater than 500 mm. The imaging optical unit can be used to inspect with sufficient imaging quality relatively large mask sections of lithography masks used during projection exposure to produce large scale integrated semiconductor components.

Abstract: A microlithography projection optical system is disclosed. The system can include a plurality of optical elements arranged to image radiation having a wavelength ? from an object field in an object plane to an image field in an image plane. The plurality of optical elements can have an entrance pupil located more than 2.8 m from the object plane. A path of radiation through the optical system can be characterized by chief rays having an angle of 3° or more with respect to the normal to the object plane. This can allow the use of face shifting masks as objects to be imaged, in particular for EUV wavelengths.

Abstract: In general, in a first aspect, the invention features a system that includes a microlithography projection optical system. The microlithography projection optical system includes a plurality of elements arranged so that during operation the plurality of elements image radiation at a wavelength ? from an object plane to an image plane. At least one of the elements is a reflective element that has a rotationally-asymmetric surface positioned in a path of the radiation. The rotationally-asymmetric surface deviates from a rotationally-symmetric reference surface by a distance of about ? or more at one or more locations of the rotationally-asymmetric surface.

Abstract: An imaging optical unit for a projection exposure apparatus serves for imaging an object field in an object plane into an image field in an image plane. The image field is arranged at a field distance from the object plane. The optical unit has a plurality of mirrors. The imaging optical unit has a wavefront aberration over the image field of a maximum of 0.3 nm and an image-side numerical aperture of at least 0.5. The image field in at least one dimension has an extent of at least 10 mm. The result is an imaging optical unit in particular suited as part of an optical system for a projection exposure apparatus for projection lithography.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first Intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y?·NA2) and wherein the condition COMP1<10 holds.

Abstract: An imaging optics has a plurality of mirrors to image an object field in an object plane into an image field in an image plane. At least one of the mirrors has a through opening for the passage of imaging light. An arrangement of the mirrors is such that principal rays run parallel or divergently in the beam path of the imaging light between the object plane and the first downstream mirror. The imaging optics can have an entrance pupil plane that lies in the beam path of the imaging light in the range of between 5 m and 2000 m in front of the object plane. The imaging optics can have an entrance pupil plane that lies in the beam path of the imaging light in the range of between 100 mm and 5000 mm in front of the object plane. Imaging optics with improved imaging quality are provided.

Abstract: An imaging optical system for a projection exposure system has at least one anamorphically imaging optical element. This allows a complete illumination of an image field in a first direction with a large object-side numerical aperture in this direction, without the extent of the reticle to be imaged having to be enlarged and without a reduction in the throughput of the projection exposure system occurring.

Abstract: An optical arrangement includes at least one optical element and a support element for the optical element. The optical element and the support element are connected together by way of at least three decoupling elements. The decoupling elements are formed monolithically with the optical element and with the support element.

Abstract: The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane. The projection objective has at least one mirror segment arrangement comprising a plurality of separate mirror segments. Associated with the mirror segments of the same mirror segment arrangement are partial beam paths which are different from each other and which respectively provide for imaging of the object plane (OP) into the image plane (IP). The partial beam paths are superposed in the image plane (IP). At least two partial beams which are superposed in the same point in the image plane (IP) were reflected by different mirror segments of the same mirror segment arrangement.

Abstract: An imaging optical system for a projection exposure system has at least one anamorphically imaging optical element. This allows a complete illumination of an image field in a first direction with a large object-side numerical aperture in this direction, without the extent of the reticle to be imaged having to be enlarged and without a reduction in the throughput of the projection exposure system occurring.

Abstract: A collector transfers an emission of an EUV radiation source to a main intensity spot. The collector has at least one collector subunit including at least one grazing incidence mirror. The grazing incidence mirror transfers EUV radiation from the radiation source to an intensity spot. At least one ellipsoid mirror of the collector has an ellipsoidal mirror surface. The ellipsoidal mirror surface is impinged by an angle of incidence above a critical grazing incidence angle. No more than one collector subunit is arranged in the beam path of an EUV radiation source between a position of the EUV radiation source and the intensity spot. At least some of the EUV rays are only reflected in a grazing manner.

Abstract: In general, in one aspect, the invention features an objective arranged to image radiation from an object plane to an image plane, including a plurality of elements arranged to direct the radiation from the object plane to the image plane, wherein the objective has an image side numerical aperture of more than 0.55 and a maximum image side field dimension of more than 1 mm, and the objective is a catoptric objective.

Abstract: A projection objective for microlithography is used for imaging an object field in an object plane into an image field in an image plane. The projection objective comprises at least six mirrors of which at least one mirror has a freeform reflecting surface. The ratio between an overall length (T) of the projection objective and an object image shift (dOIS) can be smaller than 12. The image plane is the first field plane of the projection objective downstream of the object plane. The projection objective can have a plurality of mirrors, wherein the ratio between an overall length (T) and an object image shift (dOIS) is smaller than 2.

Abstract: The disclosure generally relates to imaging optical systems that include a plurality of mirrors, which image an object field lying in an object plane in an image field lying in an image plane, where at least one of the mirrors has a through-hole for imaging light to pass through. The disclosure also generally relates to projection exposure installations that include such im-aging optical systems, methods of using such projection exposure installa-tions, and components made by such methods.

Abstract: An imaging optical system has a plurality of mirrors. These image an object field in an object plane into an image field in an image plane. In the imaging optical system, the ratio of a maximum angle of incidence of imaging light) on reflection surfaces of the mirrors and an image-side numerical aperture of the imaging optical system is less than 33.8°. This can result in an imaging optical system which offers good conditions for a reflective coating of the mirror, with which a low reflection loss can be achieved for imaging light when passing through the imaging optical system, in particular even at wavelengths in the EUV range of less than 10 nm.

Abstract: An imaging optical system for EUV projection lithography has a plurality of mirrors for imaging an object field in an object plane into an image field in an image plane. An image-side numerical aperture of the imaging optical system is at least 0.3. The imaging optical system has a pupil obscuration which is greater than 0.40 and an image filed size of at least 1 mm×10 mm. The imaging optical system can provide high quality imaging of the object.