Patents by Inventor Hans Lindberg
Hans Lindberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11574823Abstract: A heating apparatus, a method and a system for producing semiconductor chips in a wafer assembly are disclosed.Type: GrantFiled: September 10, 2021Date of Patent: February 7, 2023Assignee: OSRAM OLED GMBHInventor: Hans Lindberg
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Publication number: 20210407827Abstract: A heating apparatus, a method and a system for producing semiconductor chips in a wafer assembly are disclosed.Type: ApplicationFiled: September 10, 2021Publication date: December 30, 2021Inventor: Hans Lindberg
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Patent number: 11152231Abstract: A heating apparatus, a method and a system for producing semiconductor chips in a wafer assembly are disclosed. In an embodiment a heating device includes a heating plane configured to be arranged parallel to a plane of the semiconductor chips in the wafer composite and a first heating unit extending substantially in a radial direction with respect to a reference point in the heating plane, wherein the first heating unit includes a plurality of inductive heating elements arranged adjacent to each other in a substantially radial direction, each inductive heating element having a predetermined distance from the reference point, and wherein the inductive heating elements are formed as electromagnets or permanent magnets configured to generate eddy currents in a carrier of the wafer composite.Type: GrantFiled: October 11, 2017Date of Patent: October 19, 2021Assignee: OSRAM OLED GMBHInventor: Hans Lindberg
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Publication number: 20190244839Abstract: A heating apparatus, a method and a system for producing semiconductor chips in a wafer assembly are disclosed. In an embodiment a heating device includes a heating plane configured to be arranged parallel to a plane of the semiconductor chips in the wafer composite and a first heating unit extending substantially in a radial direction with respect to a reference point in the heating plane, wherein the first heating unit includes a plurality of inductive heating elements arranged adjacent to each other in a substantially radial direction, each inductive heating element having a predetermined distance from the reference point, and wherein the inductive heating elements are formed as electromagnets or permanent magnets configured to generate eddy currents in a carrier of the wafer composite.Type: ApplicationFiled: October 11, 2017Publication date: August 8, 2019Inventor: Hans Lindberg
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Patent number: 9837589Abstract: A radiation emitting semiconductor chip is disclosed. Embodiments provide a semiconductor chip that emits radiation includes a semiconductor body having an active zone, which emits unpolarized radiation having a first radiation component of a first polarization and having a second radiation component of a second polarization. A lattice structure acts as a waveplate or polarization filter and causes an increase in one radiation component relative to the other radiation component in the radiation emitted by the semiconductor chip through an output side. Therefore, the semiconductor chip emits polarized radiation, which has the polarization of the amplified radiation component. The attenuated radiation component remains in the semiconductor chip an optical structure, which converts the polarization of at least part of the attenuated radiation component remaining in the semiconductor chip to the polarization of the amplified radiation component, and a reflective rear side opposite the output side.Type: GrantFiled: February 22, 2016Date of Patent: December 5, 2017Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventor: Hans Lindberg
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Publication number: 20160172555Abstract: A radiation emitting semiconductor chip is disclosed. Embodiments provide a semiconductor chip that emits radiation includes a semiconductor body having an active zone, which emits unpolarized radiation having a first radiation component of a first polarization and having a second radiation component of a second polarization. A lattice structure acts as a waveplate or polarization filter and causes an increase in one radiation component relative to the other radiation component in the radiation emitted by the semiconductor chip through an output side. Therefore, the semiconductor chip emits polarized radiation, which has the polarization of the amplified radiation component. The attenuated radiation component remains in the semiconductor chip an optical structure, which converts the polarization of at least part of the attenuated radiation component remaining in the semiconductor chip to the polarization of the amplified radiation component, and a reflective rear side opposite the output side.Type: ApplicationFiled: February 22, 2016Publication date: June 16, 2016Inventor: Hans Lindberg
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Patent number: 9312441Abstract: A semiconductor chip that emits radiation includes a semiconductor body having an active zone, which emits unpolarized radiation having a first radiation component of a first polarization and having a second radiation component of a second polarization. A lattice structure acts as a waveplate or polarization filter and causes an increase in one radiation component relative to the other radiation component in the radiation emitted by the semiconductor chip through an output side. Therefore, the semiconductor chip emits polarized radiation, which has the polarization of the amplified radiation component. The attenuated radiation component remains in the semiconductor chip an optical structure, which converts the polarization of at least part of the attenuated radiation component remaining in the semiconductor chip to the polarization of the amplified radiation component, and a reflective rear side opposite the output side.Type: GrantFiled: April 16, 2012Date of Patent: April 12, 2016Assignee: OSRAM Opto Semiconductors GmbHInventor: Hans Lindberg
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Patent number: 8995491Abstract: An edge-emitting semiconductor laser includes a first waveguide layer, into which an active layer that generates laser radiation is embedded. The laser also includes a second waveguide layer, into which no active layer is embedded. The laser radiation generated in the active layer forms a standing wave, which has respective intensity maxima in the first waveguide layer and corresponding intensity minima in the second waveguide layer and respective intensity minima in the first waveguide layer and corresponding intensity maxima in the second waveguide layer at periodic intervals in a beam direction of the semiconductor laser. An at least regionally periodic contact structure is arranged at a surface of the edge-emitting semiconductor laser. A period length of the contact structure is equal to a period length of the standing wave, such that the semiconductor laser has an emission wavelength that is set by the period length of the contact structure.Type: GrantFiled: June 8, 2012Date of Patent: March 31, 2015Assignee: OSRAM Opto Semiconductors GmbHInventor: Hans Lindberg
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Publication number: 20140131754Abstract: A semiconductor chip that emits radiation includes a semiconductor body having an active zone, which emits unpolarized radiation having a first radiation component of a first polarization and having a second radiation component of a second polarization. A lattice structure acts as a waveplate or polarization filter and causes an increase in one radiation component relative to the other radiation component in the radiation emitted by the semiconductor chip through an output side. Therefore, the semiconductor chip emits polarized radiation, which has the polarization of the amplified radiation component. The attenuated radiation component remains in the semiconductor chip an optical structure, which converts the polarization of at least part of the attenuated radiation component remaining in the semiconductor chip to the polarization of the amplified radiation component, and a reflective rear side opposite the output side.Type: ApplicationFiled: April 16, 2012Publication date: May 15, 2014Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventor: Hans Lindberg
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Publication number: 20140133505Abstract: An edge-emitting semiconductor laser includes a first waveguide layer, into which an active layer that generates laser radiation is embedded. The laser also includes a second waveguide layer, into which no active layer is embedded. The laser radiation generated in the active layer forms a standing wave, which has respective intensity maxima in the first waveguide layer and corresponding intensity minima in the second waveguide layer and respective intensity minima in the first waveguide layer and corresponding intensity maxima in the second waveguide layer at periodic intervals in a beam direction of the semiconductor laser. An at least regionally periodic contact structure is arranged at a surface of the edge-emitting semiconductor laser. A period length of the contact structure is equal to a period length of the standing wave, such that the semiconductor laser has an emission wavelength that is set by the period length of the contact structure.Type: ApplicationFiled: June 8, 2012Publication date: May 15, 2014Applicant: OSRAM Opto Semiconductors GmbHInventor: Hans Lindberg
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Patent number: 8428094Abstract: A surface-emitting semiconductor laser is described, with a semiconductor chip (1), which has a substrate (2), a DBR-mirror (3) applied to the substrate (2) and an epitaxial layer sequence (4) applied to the DBR mirror (3), said layer sequence comprising a radiation-emitting active layer (5), and with an external resonator mirror (9) arranged outside the semiconductor chip (1). The DBR mirror (3) and the substrate (2) are partially transmissive for the radiation (6) emitted by the active layer (5) and the back (14) of the substrate (2) remote from the active layer (5) is reflective to the emitted radiation (6).Type: GrantFiled: December 18, 2008Date of Patent: April 23, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Hans Lindberg, Stefan Illek
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Publication number: 20110122911Abstract: A surface-emitting semiconductor laser is described, with a semiconductor chip (1), which has a substrate (2), a DBR-mirror (3) applied to the substrate (2) and an epitaxial layer sequence (4) applied to the DBR mirror (3), said layer sequence comprising a radiation-emitting active layer (5), and with an external resonator mirror (9) arranged outside the semiconductor chip (1). The DBR mirror (3) and the substrate (2) are partially transmissive for the radiation (6) emitted by the active layer (5) and the back (14) of the substrate (2) remote from the active layer (5) is reflective to the emitted radiation (6).Type: ApplicationFiled: December 18, 2008Publication date: May 26, 2011Applicant: Osram Opto Semiconductors GmbHInventors: Hans Lindberg, Stefan Illek
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Patent number: 7756188Abstract: A semiconductor laser device (5) comprising at least one semiconductor laser chip (7) is provided, wherein the semiconductor laser chip (7) contains an active layer that emits electromagnetic radiation. Further, at least one corner reflector (1) is formed in the semiconductor laser chip (7). The corner reflector (1) has a first and a second reflective surface (14, 15), wherein the first and the second reflective surface (14, 15) are arranged at an angle of less than 90 degrees with respect to one another. This results in an improved emission characteristic of the radiation emitted by the semiconductor laser device (5).Type: GrantFiled: September 11, 2008Date of Patent: July 13, 2010Assignee: Osram Opto Semiconductors GmbHInventors: Hans Lindberg, Stefan Illek
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Publication number: 20090080481Abstract: A semiconductor laser device (5) comprising at least one semiconductor laser chip (7) is provided, wherein the semiconductor laser chip (7) contains an active layer that emits electromagnetic radiation. Further, at least one corner reflector (1) is formed in the semiconductor laser chip (7). The corner reflector (1) has a first and a second reflective surface (14, 15), wherein the first and the second reflective surface (14, 15) are arranged at an angle of less than 90 degrees with respect to one another. This results in an improved emission characteristic of the radiation emitted by the semiconductor laser device (5).Type: ApplicationFiled: September 11, 2008Publication date: March 26, 2009Applicant: OSRAM Opto Semiconductors GmbHInventors: Hans LINDBERG, Stefan Illek
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Patent number: 5628874Abstract: The present invention relates to an environmental-friendly process for reducing the content of chloride in a liquor inventory of a chemical pulp mill. According to the invention, in a recovery system for pulping chemicals containing sulphur and an alkali metal, precipitator dust formed in a recovery boiler is collected and withdrawn, dissolved in water and electrolyzed for production of chlorine or hydrochloric acid in the anolyte. Since the dust normally contains a large amount of sodium sulphate, sulphuric acid and sodium hydroxide can also be produced in the electrolysis. To reduce the content of impurities, before the electrolysis, the pH of the aqueous solution is adjusted to above about 10 to precipitate inorganic substances which are separated-off together with flocculated or undissolved substances.Type: GrantFiled: February 23, 1995Date of Patent: May 13, 1997Assignee: Eka Nobel ABInventors: Hans Lindberg, Birgitta Sundblad
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Patent number: 5405496Abstract: The invention relates to a process for preparation, under reducing conditions, of cooking liquors having high sulphidity for sulphate pulp cooking, wherein the black liquor obtained in the cooking process is fed, after evaporation, completely or partly to a reactor operating at increased temperature which is obtained by energy supply from an external heat source and/or release of energy from the black liquor, a melt essentially consisting of sodium sulphide being formed and withdrawn to be further processed to cooking liquor. The process of the invention is characterized in that in addition there are fed to the reactor the whole or part of sulphur-containing and/or sulphur- and sodium-containing materials present in the pulp mill, including sulphur-containing and/or sodium- and sulphur-containing make-up chemicals used for the total chemicals balance of the pulp mill, in such a way that the mole ratio of sodium to sulphur in the total mixture fed to the reactor is within the range of 1.5 to 4.Type: GrantFiled: January 3, 1994Date of Patent: April 11, 1995Assignee: Chemrec ABInventors: Mats-Olov Hedblom, Hans Lindberg
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Patent number: D344276Type: GrantFiled: July 17, 1992Date of Patent: February 15, 1994Assignee: Sandvik ABInventors: Lars Markusson, Hans Lindberg, Lars-Gunnar Wallstrom
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Patent number: D347642Type: GrantFiled: October 22, 1990Date of Patent: June 7, 1994Assignee: Sandvik ABInventor: Hans Lindberg
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Patent number: D348891Type: GrantFiled: July 17, 1992Date of Patent: July 19, 1994Assignee: Sandvik ABInventors: Lars Markusson, Hans Lindberg, Lars-Gunnar Wallstrom
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Patent number: D351606Type: GrantFiled: July 16, 1992Date of Patent: October 18, 1994Assignee: Sandvik ABInventors: Lars Markusson, Hans Lindberg, Lars-Gunnar Wallstrom