Abstract: In a method for fabricating a semiconductor component with a cathode and an anode from a wafer, the wafer is first provided with a stop zone, thereupon treated on the cathode side and only then reduced in its thickness, so that all that remains of the stop zone is a tail barrier zone. In this case, the stop zone is doped and reduced to the tail barrier zone in such a way that a quantitative optimization of the fabrication method and thus of a thinned semiconductor element is made possible. In said quantitative optimization, diverse parameters and their relation to one another are taken into account, in particular a dopant area density of a tail barrier zone, a dopant density at an anodal surface of the tail harrier zone, a dopant density of a base, a characteristic decay length or slope of the doping profile of the tail barrier zone, and also a thickness of a base—resulting from the wafer—from anode to cathode.

Abstract: In a method for fabricating a semiconductor component with a cathode and an anode from a wafer, the wafer is first provided with a stop zone, thereupon treated on the cathode side and only then reduced in its thickness, so that all that remains of the stop zone is a tail barrier zone. In this case, the stop zone is doped and reduced to the tail barrier zone in such a way that a quantitative optimization of the fabrication method and thus of a thinned semiconductor element is made possible. In said quantitative optimization, diverse parameters and their relation to one another are taken into account, in particular a dopant area density of a tail barrier zone, a dopant density at an anodal surface of the tail barrier zone, a dopant density of a base, a characteristic decay length or slope of the doping profile of the tail barrier zone, and also a thickness of a base—resulting from the wafer—from anode to cathode.

Abstract: An IGBT is specified which can be produced in a simple manner yet can be turned on homogeneously. For this purpose, gate fingers are dispensed with and the gate current in the IGBT-Chip is forwarded, proceeding from the gate terminal, directly via the polysilicon layers of the gate electrodes to the IGBT standard cells.

Abstract: In an IGBT module which is made contact with by pressure and comprises a plurality of individual chips (4) connected in parallel, an additional layer (7) facilitates a stable short circuit. The layer (7), as a foil, as a paste or as a component of the solder, is brought into contact with the main electrodes (5,6) of the semiconductor chip (4). The layer (7) contains, for example, Ag and, together with the semiconductor material, forms a eutectic mixture whose melting point is below that of the two partner materials.

Abstract: A high-power semiconductor module having a casing which encloses at least one semiconductor element has an explosion protection element. This explosion protection element is a protective sheath which surrounds at least a portion of the casing and traps fragments which are projected outward in the event of an explosion of the semiconductor element. This prevents people from being injured or adjacent modules from being damaged by such fragments.

Abstract: A liquid crystal cell with two flat glass plates aligned parallel to one another and at a distance from one another, a web of low-melting glass solder provided between the glass plates, a liquid crystal substance provided in the inner space formed by the glass plates and the glass solder web and with electrodes applied on the surfaces of the glass plates facing one another, the connections of which are brought out of the inner space via the glass solder web, wherein the glass solder web and/or the electrodes contain an at least partly reduced oxidizing agent which is formed by the reduction of an oxidizing agent during the glass soldering of the liquid crystal cell.

Abstract: An improved electrochromic display device and a method of manufacturing it are disclosed. The improved device includes at least one layer of light absorbing and/or light reflecting fabric as a contrast enhancing adjuvant in the electrolyte of the device. According to the method of the invention a transparent support, at least one layer of fabric and a counter-electrode are assembled in laminated form and sealed together by an adhesive applied at the edges of the assembled structure.

Abstract: Electrode for a controllable electrochromic indicator device with an electrochromic layer between a transparent first and a second electrode, the second electrode having a porous solid impregnated with a liquid electrolyte.

Abstract: An improved electrochromic display device and a method of making it are disclosed. The display device includes a proton free substance used as the electrolyte which increases the lifetime of the display, even at high switching voltages. The disclosed method includes the initial dehydration of the electrolyte material and the subsequent addition of a drying agent to it.

Abstract: A controllable electrochromic indicator device is disclosed which includes two electrodes, an electrochromic layer and an adjacent charge-carrier-transmitting insulator layer situated between the two electrodes and at least one of the electrodes being deposited on a supporting plate and at least one of the electrodes being transparent. The charge carrier transmitting insulator layer is a good ion conductor and functions to almost completely block the flow of electrons. At least one of the electrodes is non-polarizable and is disposed in direct contact with the ion conductor.