Abstract: A method and an apparatus for producing a chip-substrate connection by alloying or brazing, using a solder containing two or more components with at least two metal-containing constituents X and Y. The first constituent X contains in particular gold or a similar precious metal, and the second constituent Y being consumed in the soldering operation by reacting or being dissolved in the materials or layers which are to be joined. The solder has a hypereutectic concentration of the second constituent Y. The invention furthermore relates to a solder for the production of a chip-substrate connection, and to a semiconductor component with a semiconductor chip which is secured to a substrate by alloying or brazing.

Abstract: A geometrically accurate transfer with low manufacturing tolerances is made possible by a method for transferring superfine photoresist structures into a dielectric layer. A photoresist mask is provided on the dielectric layer. This mask is used in a subsequent ion implantation. The implantation is carried out under such circumstances that neither the resist mask nor the dielectric layer which is to be structured is got through by the incident ion beam.

Abstract: Sensor with polycrystalline silicon resistors which are applied to a substrate and are covered with a dielectric passivating layer, characterized by the feature that the resistors are thermally adapted by targeted adjustment of their dopings and by suitable healing, and are balanced by laser trimming.