Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate, a conductive feature on the substrate, and an electrical connection structure on the conductive feature. The electrical connection includes a first grain made of a first metal material, and a first inhibition layer made of a second metal layer that is different than the first metal material. The first inhibition layer extends vertically along a first side of a grain boundary of the first grain and laterally along a bottom of the grain boundary of the first grain.

Abstract: The present application belongs to the technical field of biopharmaceutical production devices, and discloses a culture vessel carrier automatic slide mechanism and a shaker incubator, by means of which a shake flask/shake tube/well plate carrier assembly can automatically slide in and out relative to an incubator main body. The culture vessel carrier automatic slide mechanism comprises a slide protective housing and is provided with a culture vessel carrier bearing member. A first slide rail and a second slide rail are arranged below the culture vessel carrier bearing member. The second slide rail is arranged below the culture vessel carrier bearing member and located above the first slide rail, and the first slide rail is arranged inside the incubator main body on a fixed base that does not slide.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The method includes forming a first dielectric feature between first and the second fin structures, wherein each first and second fin structure includes first semiconductor layers and second semiconductor layers alternatingly stacked and in contact with the first dielectric layer. The method also includes removing the second semiconductor layers so that the first semiconductor layers of the first and second fin structures extend laterally from a first side and a second side of the first dielectric feature, respectively, trimming the first dielectric feature so that the first dielectric feature has a reduced thickness on both first and the second sides, and forming a gate electrode layer to surround each of the first semiconductor layers of the first and second fin structures.

Abstract: A method for removing branches from trained deep learning models is provided. The method includes steps (i)-(v). In step (i), a trained model is obtained. The trained model has a branch structure involving one or more original convolutional layers and a shortcut connection. In step (ii), the shortcut connection is removed from the branch structure. In step (iii), a reparameterization model is built by linearly expanding each of the original convolutional layers into a reparameterization block in the reparameterization model. In step (iv), parameters of the reparameterization blocks are optimized by training the reparameterization model. In step (v), each of the optimized reparameterization blocks is transformed into a reparameterized convolutional layer to form a branchless structure that replaces the branch structure in the trained model.

Abstract: In aspects of the disclosure, a method, a system, and a computer-readable medium are provided. The method of building a kernel reparameterization for replacing a convolution-wise operation kernel in training of a neural network comprises selecting one or more blocks from tensor blocks and operations; and connecting the selected one or more blocks with the selected operations to build the kernel reparameterization. The kernel reparameterization has a dimension same as that of the convolution-wise operation kernel.

Abstract: A micro electro mechanical system (MEMS) device and a method for manufacturing the same are provided. The MEMS device includes a substrate, a polymer film on the substrate and having a lower surface facing toward the substrate, a cavity passing through the substrate, and coil structures on the substrate and in the polymer film. The polymer film includes a corrugation pattern on the lower surface of the polymer film. A portion of the polymer film is exposed in the cavity.

Abstract: The present disclosure provides a light-emitting package. The light-emitting package includes a main body, a cavity disposed in the cavity, a base plane in the cavity and a light-emitting element. The light-emitting element is disposed in the cavity and connected to the base plane. The light-emitting element includes a substrate and a semiconductor stack on the substrate. The substrate includes a side wall, and the side wall incudes a first cutting trace. The main body includes a step portion disposed in the cavity and it surrounds the light-emitting element. The step portion comprises a first height relative to base plane, and the first cutting trace comprises a second height relative to the base plane. The second height is greater than the first height.

Abstract: Disclosed are a power demand side speech interaction method and system. The method includes: obtaining original demand information, the original demand information including user's basic information, user demand information, and a user demand time; converting the original demand information into first information in text format; performing text statistical analysis based on an industry term on the first information in text format, to obtain second information; searching for corresponding user's actual information from a database according to the second information; outputting the user's actual information; searching for a corresponding forecasting model from the database, according to the second information and the user's basic information; calculating, according to a policy limit value of latest policy information in the database, a time for which the model corresponding to the user's basic information reaches the policy limit value; and transmitting an early warning message.

Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: Disclosed is a method of fabricating a contact in a semiconductor device. The method includes: receiving a semiconductor structure having an opening into which the contact is to be formed; forming a metal layer in the opening; forming a bottom anti-reflective coating (BARC) layer in the opening; performing implanting operations with a dopant on the BARC layer and the metal layer, the performing implanting operations including controlling an implant energy level and controlling an implant dosage level to form a crust layer with a desired minimum depth on top of the BARC layer; removing unwanted metal layer sections using wet etching operations, wherein the crust layer and BARC layer protect remaining metal layer sections under the BARC layer from metal loss during the wet etching operations; removing the crust layer and the BARC layer; and forming the contact in the opening over the remaining metal layer sections.

Abstract: Provided is a method and a system for transmitting information. The method is applicable to a processing device, and includes: acquiring a target image of a display device; determining a target area in the target image; and sending display information to the display device, wherein the display information includes information of the target area; wherein the target area is a partial pixel area of the target image, the target area includes pixels with transparencies less than 1, and transparencies of the pixels outside the target area in the target image are all 1.

Abstract: Methods and devices that include a multigate device having a channel layer disposed between a source feature and a drain feature, a metal gate that surrounds the channel layer, and a first air gap spacer interposing the metal gate and the source feature and a second air gap spacer interposing the metal gate and the drain feature. A backside contact extends to the source feature. A power line metallization layer is connected to the backside contact.

Abstract: A semiconductor device includes a semiconductor substrate, a first epitaxial feature having a first semiconductor material over the semiconductor substrate, and a second epitaxial feature having a second semiconductor material over the semiconductor substrate. The second semiconductor material being different from the first semiconductor material. The semiconductor device further includes a first silicide layer on the first epitaxial feature, a second silicide layer on the second epitaxial feature, a metal layer on the first silicide layer, a first contact feature over the metal layer, and a second contact feature over the second silicide layer. A first number of layers between the first contact feature and the first epitaxial feature is greater than a second number of layers between the second contact feature and the second epitaxial feature.

Abstract: A connecting assembly is applied to connect a first housing and a second housing. The connecting assembly includes a general connecting member, a connecting base, and a clamping member. The general connecting member connects to the first housing. The general connecting member includes an accommodating portion and at least one opening. The accommodating portion is located inside the general connecting member. The opening is disposed on a side wall of the general connecting member and communicates with the accommodating portion. The connecting base is disposed on the second housing. The connecting base includes a main body disposed in the accommodating portion. The clamping member includes a flat portion and at least one clamping portion. The clamping portion extends from one end of the flat portion toward the connecting base, and the clamping portion passes through the opening and presses against the main body of the connecting base.

Abstract: A method for manufacturing a liquid crystal display panel and a liquid crystal display panel are provided. The method of manufacturing a liquid crystal display panel comprises the following steps: grinding the display device along a preset edge and removing the adhesive layer on a side of the preset edge away from a frame sealant, to obtain the liquid crystal display panel.

Abstract: A user equipment (UE) includes one or more non-transitory computer-readable media containing computer-executable instructions embodied therein, and at least one processor coupled to the one or more non-transitory computer-readable media. The at least one processor configured to execute the computer-executable instructions to receive downlink control information (DCI) on a downlink (DL) channel of a non-terrestrial network (NTN), the DL channel reception ending in a first slot, and transmit an uplink (UL) transmission on a UL channel of the NTN in a second slot. The second slot is separate from the first slot by a timing offset, where a duration of the timing offset is dependent on a type of the UL transmission and a numerology of the UL transmission.

Abstract: A method including forming a III-V compound layer on a substrate and implanting a main dopant in the III-V compound layer to form source and drain regions. The method further includes implanting a group V species into the source and drain regions. A semiconductor device including a substrate and a III-V compound layer over the substrate. The semiconductor device further includes source and drain regions in the III-V layer, wherein the source and drain regions comprises a first dopants and a second dopant, and the second dopant comprises a group V material.

Abstract: A method of wireless communication, by a user equipment (UE), includes receiving multiple neural network training configurations for channel state feedback (CSF). Each configuration corresponds to a different neural network framework. The method also includes training each of a group of neural network decoder/encoder pairs in accordance with the received training configurations. A method of wireless communication, by a base station, includes transmitting multiple neural network training configurations to a user equipment (UE) for channel state feedback (CSF). Each configuration corresponds to a different neural network framework. The method also includes receiving a neural network decoder/encoder pair trained in accordance with the training configurations.