Abstract: A method disclosed includes the following operations as below: forming at least one capacitor between multiple interposing conductors and multiple gates; and forming multiple interposing connectors connected to the interposing conductors. One of the interposing conductors is interposed between two adjacent gates of the gates. In a plain view, the interposing connectors are separate from the gates.

Abstract: According to some embodiments, an integrated circuit device is disclosed. The integrated circuit device include at least one inductor having at least one turn, a magnetic coupling ring positioned adjacent to the at least one inductor, the magnetic coupling ring comprising at least two magnetic coupling turns, the at least two magnetic coupling turns are disposed adjacent to the at least one turn to enable magnetic coupling between the at least two magnetic coupling turns and the at least one turn The integrated circuit device also includes a power electrode and a ground electrode, wherein the power electrode and the ground electrode are coupled to the at least one inductor and the magnetic coupling ring to provide a first current in the at least one inductor having a direction opposite to a second current in the magnetic coupling ring to cancel at least a portion of a magnetic field generated by the at least one inductor.

Abstract: An integrated circuit includes a p-type active zone located in an n-type well, an n-type active zone located in a p-type well, an n-type pick-up region located in the n-type well, and a p-type pick-up region located in the p-type well. The integrated circuit also includes a first power rail and a second power rail extending in a first direction, and a first conductive segment and a second conductive segment extending in a second direction. The first power rail, the p-type active zone, the n-type active zone, and the second power rail are arranged along the second direction separating from each other. The first conductive segment connects the n-type pick-up region with the first power rail, and the second conductive segment connects the p-type pick-up region with the second power rail.

Abstract: An integrated circuit includes two parallel active zones extending in a first direction, an n-type pick-up region, and a p-type pick-up region. The two parallel active zones includes a p-type active zone located in an n-type well and an n-type active zone located in a p-type well. The n-type pick-up region is located in the n-type well and configured to have a first supply voltage. The p-type pick-up region is located in the p-type well and configured to have a second supply voltage, wherein the second supply voltage is lower than the first supply voltage. The n-type pick-up region and the p-type pick-up region are separated from each other along a direction that is different from the first direction.

Abstract: A method of forming a semiconductor device. The method includes forming a first well of a first-type in a substrate of a second-type, forming a first active zone of the first-type in a second well of the second-type on the substrate, and forming a second active zone of the second-type in the first-type well. The method also includes forming a first pick-up region of the first-type located in the first well, and forming a second pick-up region of the second-type located in the second well. Each of the first active zone and the second active zone extends in a first direction. The first pick-up region and the second pick-up region are separated from each other, by the first active zone and the second active zone, along a direction that is different from the first direction.

Abstract: A device includes a first capacitor and a second capacitor connected to the first capacitor in parallel. The first capacitor includes a semiconductor region and a first plurality of gate stacks. The first plurality of gate stacks comprise a plurality of gate dielectrics over and contacting the semiconductor region, and a plurality of gate electrodes over the plurality of gate dielectrics. The second capacitor includes an isolation region, a second plurality of gate stacks over the isolation region, and a plurality of conductive strips over the isolation region and parallel to the second plurality of gate stacks. The second plurality of gate stacks and the plurality of conductive strips are laid out alternatingly.

Abstract: A device includes a first capacitor and a second capacitor connected to the first capacitor in parallel. The first capacitor includes a semiconductor region and a first plurality of gate stacks. The first plurality of gate stacks comprise a plurality of gate dielectrics over and contacting the semiconductor region, and a plurality of gate electrodes over the plurality of gate dielectrics. The second capacitor includes an isolation region, a second plurality of gate stacks over the isolation region, and a plurality of conductive strips over the isolation region and parallel to the second plurality of gate stacks. The second plurality of gate stacks and the plurality of conductive strips are laid out alternatingly.

Abstract: A method disclosed includes the following operations as below: forming at least one capacitor between multiple interposing conductors and multiple gates; and forming multiple interposing connectors connected to the interposing conductors. One of the interposing conductors is interposed between two adjacent gates of the gates. In a plain view, the interposing connectors are separate from the gates.

Abstract: According to some embodiments, an integrated circuit device is disclosed. The integrated circuit device include at least one inductor having at least one turn, a magnetic coupling ring positioned adjacent to the at least one inductor, the magnetic coupling ring comprising at least two magnetic coupling turns, the at least two magnetic coupling turns are disposed adjacent to the at least one turn to enable magnetic coupling between the at least two magnetic coupling turns and the at least one turn The integrated circuit device also includes a power electrode and a ground electrode, wherein the power electrode and the ground electrode are coupled to the at least one inductor and the magnetic coupling ring to provide a first current in the at least one inductor having a direction opposite to a second current in the magnetic coupling ring to cancel at least a portion of a magnetic field generated by the at least one inductor.

Abstract: A device includes a plurality of active areas, a plurality of gates, and a plurality of conductors. The active areas are elongated in a first direction. The gates are elongated in a second direction. The conductors are disposed between the active areas and elongated in the second direction. Each one of the conductors has an overlap with at least one corresponding gate of the gates to form at least one capacitor.

Abstract: According to some embodiments, an integrated circuit device is disclosed. The integrated circuit device include at least one inductor having at least one turn, a magnetic coupling ring positioned adjacent to the at least one inductor, the magnetic coupling ring comprising at least two magnetic coupling turns, the at least two magnetic coupling turns are disposed adjacent to the at least one turn to enable magnetic coupling between the at least two magnetic coupling turns and the at least one turn. The integrated circuit device also includes a power electrode and a ground electrode, wherein the power electrode and the ground electrode are coupled to the at least one inductor and the magnetic coupling ring to provide a first current in the at least one inductor having a direction opposite to a second current in the magnetic coupling ring to cancel at least a portion of a magnetic field generated by the at least one inductor.

Abstract: A stacked semiconductor arrangement is provided. The stacked semiconductor arrangement includes a dynamic pattern generator layer having an electrical component. The arrangement also includes a monitoring layer configured to evaluate electrical performance of the electrical component.

Abstract: Semiconductor structures are provided. A semiconductor structure includes a substrate, a conductive plate of a first metal layer over the substrate, a first resistor material of a resistor layer over the conductive plate, a high-K material formed between the first resistor material and the conductive plate, a first conductive line of a second metal layer over the resistor layer, and a first via formed between the first conductive line and the first resistor material. The conductive plate, the first resistor material and the high-K material form a capacitor between the first and second metal layers. The first distance between the first resistor material and the conductive plate is less than the second distance between the first resistor material and the first conductive line.

Abstract: An integrated circuit includes two parallel active zones extending in a first direction, an n-type pick-up region, and a p-type pick-up region. The two parallel active zones includes a p-type active zone located in an n-type well and an n-type active zone located in a p-type well. The n-type pick-up region is located in the n-type well and configured to have a first supply voltage. The p-type pick-up region is located in the p-type well and configured to have a second supply voltage, wherein the second supply voltage is lower than the first supply voltage. The n-type pick-up region and the p-type pick-up region are separated from each other along a direction that is different from the first direction.

Abstract: A device includes a plurality of active areas, a plurality of gates, and a plurality of conductors. The active areas are elongated in a first direction. The gates are elongated in a second direction. The conductors are disposed between the active areas and elongated in the second direction. Each one of the conductors has an overlap with at least one corresponding gate of the gates to form at least one capacitor.

Abstract: A device includes a first capacitor and a second capacitor connected to the first capacitor in parallel. The first capacitor includes a semiconductor region and a first plurality of gate stacks. The first plurality of gate stacks comprise a plurality of gate dielectrics over and contacting the semiconductor region, and a plurality of gate electrodes over the plurality of gate dielectrics. The second capacitor includes an isolation region, a second plurality of gate stacks over the isolation region, and a plurality of conductive strips over the isolation region and parallel to the second plurality of gate stacks. The second plurality of gate stacks and the plurality of conductive strips are laid out alternatingly.

Abstract: Semiconductor structures are provided. A semiconductor structure includes a substrate, a conductive plate of a first metal layer over the substrate, a first resistor material of a resistor layer over the conductive plate, a high-K material formed between the first resistor material and the conductive plate, a first conductive line of a second metal layer over the resistor layer, and a first via formed between the first conductive line and the first resistor material. The conductive plate, the first resistor material and the high-K material form a capacitor between the first and second metal layers. The first distance between the first resistor material and the conductive plate is less than the second distance between the first resistor material and the first conductive line.

Abstract: A device includes a plurality of active areas, a plurality of gates, and a plurality of conductors. The active areas are elongated in a first direction. The gates are elongated in a second direction. The conductors are disposed between the active areas and elongated in the second direction. Each one of the conductors has an overlap with at least one corresponding gate of the gates to form at least one capacitor.

Abstract: A device includes a first capacitor and a second capacitor connected to the first capacitor in parallel. The first capacitor includes a semiconductor region and a first plurality of gate stacks. The first plurality of gate stacks comprise a plurality of gate dielectrics over and contacting the semiconductor region, and a plurality of gate electrodes over the plurality of gate dielectrics. The second capacitor includes an isolation region, a second plurality of gate stacks over the isolation region, and a plurality of conductive strips over the isolation region and parallel to the second plurality of gate stacks. The second plurality of gate stacks and the plurality of conductive strips are laid out alternatingly.

Abstract: According to some embodiments, an integrated circuit device is disclosed. The integrated circuit device include at least one inductor having at least one turn, a magnetic coupling ring positioned adjacent to the at least one inductor, the magnetic coupling ring comprising at least two magnetic coupling turns, the at least two magnetic coupling turns are disposed adjacent to the at least one turn to enable magnetic coupling between the at least two magnetic coupling turns and the at least one turn The integrated circuit device also includes a power electrode and a ground electrode, wherein the power electrode and the ground electrode are coupled to the at least one inductor and the magnetic coupling ring to provide a first current in the at least one inductor having a direction opposite to a second current in the magnetic coupling ring to cancel at least a portion of a magnetic field generated by the at least one inductor.