Patents by Inventor Hao-Chih Yuan
Hao-Chih Yuan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220123158Abstract: A photovoltaic (PV) device with improved blue response. The PV device includes a silicon substrate with an emitter layer on a light receiving side. The emitter layer has a low dopant level such that it has sheet resistance of 90 to 170 ohm/sq. Anti-reflection in the PV device is provided solely by a nano-structured or black silicon surface on the light-receiving surface, through which the emitter is fanned by diffusion. The nanostructures of the black silicon are formed in a manner that does not result in gold or another high-recombina-tion metal being left in the black silicon such as with metal-assisted etching using silver. The black silicon is further processed to widen these pores so as to provide larger nanostruc-tures with lateral dimensions in the range of 65 to 150 nanometers so as to reduce surface area and also to etch away a highly doped portion of the emitter.Type: ApplicationFiled: December 23, 2021Publication date: April 21, 2022Inventors: Jihun OH, Howard M. BRANZ, Hao-Chih YUAN
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Patent number: 11251318Abstract: A photovoltaic (PV) device with improved blue response. The PV device includes a silicon substrate with an emitter layer on a light receiving side. The emitter layer has a low opant level such that it has sheet resistance of 90 to 170 ohm/sq. Anti-reflection in the PV device is provided solely by a nano-structured or black silicon surface on the light-receiving surface, through which the emitter is formed by diffusion. The nano structures of the black silicon are formed in a manner that does not result in gold or another high-recombination metal being left in the black silicon such as with metal-assisted etching using silver. The black silicon is further processed to widen these pores so as to provide larger nanostructures with lateral dimensions in the range of 65 to 150 nanometers so as to reduce surface area and also to etch away a highly doped portion of the emitter.Type: GrantFiled: March 8, 2011Date of Patent: February 15, 2022Assignee: Alliance for Sustainable Energy, LLCInventors: Jihun Oh, Howard M. Branz, Hao-Chih Yuan
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Patent number: 9972763Abstract: A bi-stable micro-electrical mechanical system (MEMS) heat harvester is provided. A bi-stable MEMS cantilever located between a hot temperature surface and a cold temperature surface, and is made up of a first MEMS material layer, having a first coefficient of thermal expansion. A second MEMS material layer is in contact with the first MEMS material layer, and has a second coefficient of thermal expansion less than the first coefficient of thermal expansion. A tensioner, made from a material having a tensile stress greater than the stress of the first or second MEMS materials, is connected to the cantilever. The heat harvester also includes a mechanical-to-electrical power converter, which may be a piezoelectric device or an electret device. The bi-stable MEMS cantilever may include a thermal expander having a coefficient of thermal expansion greater than the second coefficient of thermal expansion. The thermal expander is connected to the tensioner.Type: GrantFiled: February 6, 2016Date of Patent: May 15, 2018Assignee: Sharp Laboratories of America, Inc.Inventors: Changqing Zhan, Wei Pan, Hao-Chih Yuan
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Patent number: 9911873Abstract: Methods of hydrogenation of passivated contacts using materials having hydrogen impurities are provided. An example method includes applying, to a passivated contact, a layer of a material, the material containing hydrogen impurities. The method further includes subsequently annealing the material and subsequently removing the material from the passivated contact.Type: GrantFiled: August 11, 2016Date of Patent: March 6, 2018Assignee: Alliance for Sustainable Energy, LLCInventors: William Nemeth, Hao-Chih Yuan, Vincenzo LaSalvia, Pauls Stradins, Matthew R. Page
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Publication number: 20170229630Abstract: A bi-stable micro-electrical mechanical system (MEMS) heat harvester is provided. A bi-stable MEMS cantilever located between a hot temperature surface and a cold temperature surface, and is made up of a first MEMS material layer, having a first coefficient of thermal expansion. A second MEMS material layer is in contact with the first MEMS material layer, and has a second coefficient of thermal expansion less than the first coefficient of thermal expansion. A tensioner, made from a material having a tensile stress greater than the stress of the first or second MEMS materials, is connected to the cantilever. The heat harvester also includes a mechanical-to-electrical power converter, which may be a piezoelectric device or an electret device. The bi-stable MEMS cantilever may include a thermal expander having a coefficient of thermal expansion greater than the second coefficient of thermal expansion. The thermal expander is connected to the tensioner.Type: ApplicationFiled: February 6, 2016Publication date: August 10, 2017Inventors: Changqing Zhan, Wei Pan, Hao-Chih Yuan
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Publication number: 20170047458Abstract: Methods of hydrogenation of passivated contacts using materials having hydrogen impurities are provided. An example method includes applying, to a passivated contact, a layer of a material, the material containing hydrogen impurities. The method further includes subsequently annealing the material and subsequently removing the material from the passivated contact.Type: ApplicationFiled: August 11, 2016Publication date: February 16, 2017Inventors: William NEMETH, Hao-Chih YUAN, Vincenzo LaSALVIA, Pauls STRADINS, Matthew R. PAGE
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Publication number: 20160099674Abstract: A flat panel photovoltaic (PV) system is provided formed from a first sheet with rows of concentrated III-V photovoltaic (CPV) solar cells. An overlying second sheet is made up of rows of waveguides, where each waveguide is coupled to a corresponding CPV solar cell. A third sheet includes overlying one-piece linear lenses, each having a focal line coupled to the waveguides in a corresponding row. Optionally, a fourth sheet underlies the first sheet, which is a 1-sun solar panel including a plurality of silicon PV cells. In one variation adjacent rows of waveguides couple to the same row of CPV cells. In another variation, each waveguide in a row is optically coupled to waveguides in an adjacent row, which adjacent waveguides are then coupled to a corresponding row of CPV cells. A lens overlies each row of waveguides, with a focal line coupled to each waveguide in that row.Type: ApplicationFiled: August 13, 2015Publication date: April 7, 2016Inventors: Wei Pan, Douglas Tweet, Brian Wheelwright, Gregory Stecker, David Evans, Hao-Chih Yuan
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Patent number: 9076903Abstract: A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).Type: GrantFiled: January 8, 2014Date of Patent: July 7, 2015Assignee: Alliance for Sustainable Energy, LLCInventors: Hao-Chih Yuan, Howard M. Branz, Matthew R. Page
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Patent number: 9034216Abstract: A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.Type: GrantFiled: November 11, 2010Date of Patent: May 19, 2015Assignee: Alliance for Sustainable Energy, LLCInventors: Vernon Yost, Hao-Chih Yuan, Matthew Page
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Patent number: 8828765Abstract: A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).Type: GrantFiled: June 9, 2010Date of Patent: September 9, 2014Assignee: Alliance for Sustainable Energy, LLCInventors: Hao-Chih Yuan, Howard M. Branz, Matthew R. Page
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Publication number: 20140127850Abstract: A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).Type: ApplicationFiled: January 8, 2014Publication date: May 8, 2014Applicant: Alliance for Sustainable Energy, LLCInventors: Hao-Chih Yuan, Howard M. Branz, Matthew R. Page
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Patent number: 8698263Abstract: Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device.Type: GrantFiled: July 6, 2012Date of Patent: April 15, 2014Assignee: Wisconsin Alumni Research FoundationInventors: Zhenqiang Ma, Max G. Lagally, Hao-Chih Yuan
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Publication number: 20130340824Abstract: A photovoltaic (PV) device with improved blue response. The PV device includes a silicon substrate with an emitter layer on a light receiving side. The emitter layer has a low opant level such that it has sheet resistance of 90 to 170 ohm/sq. Anti-reflection in the PV device is provided solely by a nano-structured or black silicon surface on the light-receiving surface, through which the emitter is formed by diffusion. The nano structures of the black silicon are formed in a manner that does not result in gold or another high-recombination metal being left in the black silicon such as with metal-assisted etching using silver. The black silicon is further processed to widen these pores so as to provide larger nanostructures with lateral dimensions in the range of 65 to 150 nanometers so as to reduce surface area and also to etch away a highly doped portion of the emitter.Type: ApplicationFiled: March 8, 2011Publication date: December 26, 2013Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventors: Jihun Oh, Howard M. Branz, Hao-Chih Yuan
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Publication number: 20130234072Abstract: A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.Type: ApplicationFiled: November 11, 2010Publication date: September 12, 2013Applicant: ALLIANCE FOR SUSTANABLE ENERGY, LLCInventors: Vernon Yost, Hao-Chih Yuan, Matthew Page
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Publication number: 20120273913Abstract: Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device.Type: ApplicationFiled: July 6, 2012Publication date: November 1, 2012Inventors: Zhenqiang Ma, Max G. Lagally, Hao-Chih Yuan
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Patent number: 8232617Abstract: Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device.Type: GrantFiled: June 4, 2009Date of Patent: July 31, 2012Assignee: Wisconsin Alumni Research FoundationInventors: Zhenqiang Ma, Max G. Lagally, Hao-Chih Yuan
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Patent number: 8089073Abstract: This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.Type: GrantFiled: September 8, 2010Date of Patent: January 3, 2012Assignee: Wisconsin Alumni Research FoundationInventors: Paul G. Evans, Max G. Lagally, Zhenqiang Ma, Hao-Chih Yuan, Guogong Wang, Mark A. Eriksson
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Publication number: 20110303265Abstract: A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).Type: ApplicationFiled: June 9, 2010Publication date: December 15, 2011Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventors: Hao-Chih Yuan, Howard M. Branz, Matthew R. Page
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Patent number: 7960218Abstract: This invention provides methods for fabricating high speed TFTs from silicon-on-insulator and bulk single crystal semiconductor substrates, such as Si(100) and Si(110) substrates. The TFTs may be designed to have a maximum frequency of oscillation of 3 GHz, or better.Type: GrantFiled: September 8, 2006Date of Patent: June 14, 2011Assignee: Wisconsin Alumni Research FoundationInventors: Zhenqiang Ma, Hao-Chih Yuan, Guogong Wang
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Publication number: 20100327355Abstract: This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.Type: ApplicationFiled: September 8, 2010Publication date: December 30, 2010Inventors: Hao-Chih Yuan, Guogong Wang, Mark A. Eriksson, Paul G. Evans, Max G. Lagally, Zhenqiang Ma