Abstract: A semiconductor structure includes a first device unit and a second device unit, each of which includes channel features spaced apart from each other, and a dielectric wall disposed between the first and second device units. The dielectric wall includes a first part which includes a plurality of first portions that are in direct contact with the channel features of the first device unit, and a second part which includes a plurality of second portions that are in direct contact with the channel features of the second device unit. At least one of the first and second parts carries positive or negative charges.

Abstract: The present disclosure provides a semiconductor structure with having a source/drain feature with a central cavity, and a source/drain contact feature formed in central cavity of the source/drain region, wherein the source/drain contact feature is nearly wrapped around by the source/drain region. The source/drain contact feature may extend to a lower most of a plurality semiconductor layers.

Abstract: A power supply circuit is provided. The power factor correction (PFC) circuit is used to perform a power factor correction according to a first voltage to generate an intermediate voltage. The first storage capacitor is used to store a first electrical energy related to the intermediate voltage. The boost conversion circuit is connected to the PFC circuit and used to generate an output voltage according to the intermediate voltage. The boost conversion circuit includes a first post-stage inductor, a first post-stage diode and a first post-stage transistor. The second storage capacitor is used to store a second electrical energy related to the output voltage. The capacitance value of the second storage capacitor is less than the capacitance value of the first storage capacitor; the first electrical energy is completely or partially transferred as the second electrical energy.

Abstract: A system and a method for generating an arbitrary waveform of a microwave photon based on optical frequency tuning are provided. The system includes an optical frequency comb, a first optical distribution unit, a first photoelectric conversion unit, a frequency-shift drive circuit, and an optical frequency doubling/dividing unit, an optical frequency-shift combining optical circuit, a second photoelectric conversion unit, and a second electrical processing circuit. The optical frequency comb is used as the frequency source, with the features of high stability and low phase noise of the optical frequency comb, the arbitrary waveforms of microwave photons can be generated through optical frequency tuning control; the performance of the optical frequency comb is three orders of magnitude or more higher than that of the common microwave frequency sources, therefore, the waveforms with high-frequency, ultra-wideband, low phase noise, and high stability can be generated.

Abstract: Semiconductor structures and processes are provided. A semiconductor structure of the present disclosure includes a first base portion and a second base portion extending lengthwise along a first direction, a first source/drain feature disposed over the first base portion, a second source/drain feature disposed over the second base portion, a center dielectric fin sandwiched between the first source/drain feature and the second source/drain feature along a second direction perpendicular to the first direction, and a source/drain contact disposed over the first source/drain feature, the second source/drain feature and the center dielectric fin. A portion of the source/drain contact extends between the first source/drain feature and the second source/drain feature along the second direction.

Abstract: A single-stage enthalpy enhancing rotary compressor and an air conditioner having same. The single-stage enthalpy enhancing rotary compressor includes: at least one single-stage cylinder, a rotator, an upper flange, and a lower flange. The rotator is arranged inside the cylinder and is rotatable, a compression chamber is formed between the rotator and an inner peripheral wall of the cylinder, a vapor injection opening is defined in at least one of the upper flange the lower flange, and the vapor injection opening is configured to supply gas outside the compressor to the compression chamber directly. According to the present disclosure, two-stage compression is realized without adding an extra cylinder, thereby effectively enhancing a circulation of refrigerant, improving cooling performance of the air conditioner under high environmental temperatures.

Abstract: New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

Abstract: Provided is a semiconductor device including a substrate having a lower portion and an upper portion on the lower portion; an isolation region disposed on the lower portion of the substrate and surrounding the upper portion of the substrate in a closed path; a gate structure disposed on and across the upper portion of the substrate; source and/or drain (S/D) regions disposed in the upper portion of the substrate at opposite sides of the gate structure; and a channel region disposed below the gate structure and abutting between the S/D regions, wherein the channel region and the S/D regions have different conductivity types, and the channel region and the substrate have the same conductivity type.

Abstract: A user equipment (UE) may attempt to access an edge data network. The UE generates a first credential based on a second credential that was generated for a procedure between the UE and a network. The UE then generates an identifier corresponding to the first credential and generates a message authentication code based on the first credential and a count, wherein the count is associated with an identifier of an edge network client running on the UE. The UE then transmits an application registration request, message to a server associated with an edge data network, the application registration request message including the count, the message authentication code, the identifier corresponding to the first credential, and a public land mobile network identifier (PLMN ID) of the network. The UE then receives an authentication accept message or an authentication reject message from the server associated with the edge data network.

Abstract: A light emitting diode device includes a substrate, a conductive via, first and second conductive pads, a driving chip, a flat layer, a redistribution layer, a light emitting diode, and an encapsulating layer. The substrate has a first surface and a second surface opposite thereto. The conductive via penetrates from the first surface to the second surface. The first and second conductive pads are respectively disposed on the first and second surface and in contact with the conductive via. The driving chip is disposed on the first surface. The flat layer is disposed over the first surface and covers the driving chip and the first conductive pad. The redistribution layer is disposed on the flat layer and electrically connects to the driving chip. The light emitting diode is flip-chip bonded to the redistribution layer. The encapsulating layer covers the redistribution layer and the light emitting diode.

Abstract: A geometric approach may be used to detect objects on a road surface. A set of points within a region of interest between a first frame and a second frame are captured and tracked to determine a difference in location between the set of points in two frames. The first frame may be aligned with the second frame and the first pixel values of the first frame may be compared with the second pixel values of the second frame to generate a disparity image including third pixels. One or more subsets of the third pixels that have a value above a first threshold may be combined, and the third pixels may be scored and associated with disparity values for each pixel of the one or more subsets of the third pixels. A bounding shape may be generated based on the scoring.

Abstract: A system and a method for generating an arbitrary waveform of a microwave photon based on optical frequency tuning are provided. The system includes an optical frequency comb, a first optical distribution unit, a first photoelectric conversion unit, a frequency-shift drive circuit, and an optical frequency doubling/dividing unit, an optical frequency-shift combining optical circuit, a second photoelectric conversion unit, and a second electrical processing circuit. The optical frequency comb is used as the frequency source, with the features of high stability and low phase noise of the optical frequency comb, the arbitrary waveforms of microwave photons can be generated through optical frequency tuning control; the performance of the optical frequency comb is three orders of magnitude or more higher than that of the common microwave frequency sources, therefore, the waveforms with high-frequency, ultra-wideband, low phase noise, and high stability can be generated.

Abstract: A semiconductor device structure includes a first dielectric wall, a plurality of first semiconductor layers vertically stacked and extending outwardly from a first side of the first dielectric wall, each first semiconductor layer has a first width, a plurality of second semiconductor layers vertically stacked and extending outwardly from a second side of the first dielectric wall, each second semiconductor layer has a second width, a plurality of third semiconductor layers disposed adjacent the second side of the first dielectric wall, each third semiconductor layer has a third width greater than the second width, a first gate electrode layer surrounding at least three surfaces of each of the first semiconductor layers, the first gate electrode layer having a first conductivity type, and a second gate electrode layer surrounding at least three surfaces of each of the second semiconductor layers, the second gate electrode layer having a second conductivity type opposite the first conductivity type.

Abstract: The present disclosure provides a circuit board including a first circuit layer, a dielectric layer on the first circuit layer, and a seed layer on the dielectric layer and directly contacting the first circuit layer, in which a top surface of the seed layer includes a levelled portion. The circuit board also includes a second circuit layer on the levelled portion of the seed layer, in which a grain boundary density of the second circuit layer is lower than that of a portion of the seed layer directly contacting the first circuit layer.

Abstract: A semiconductor device includes a substrate, a first stack of semiconductor nanosheets, a second stack of semiconductor nanosheets, a gate structure and a first dielectric wall. The substrate includes a first fin and a second fin. The first stack of semiconductor nanosheets is disposed on the first fin. The second stack of semiconductor nanosheets is disposed on the second fin. The gate structure wraps the first stack of semiconductor nanosheets and the second stack of semiconductor nanosheets. The first dielectric wall is disposed between the first stack of semiconductor nanosheets and the second stack of semiconductor nanosheets. The first dielectric wall includes at least one neck portion between adjacent two semiconductor nanosheets of the first stack.

Abstract: A SiC ohmic contact preparation method is provided and includes: selecting a SiC substrate; preparing a graphene/SiC structure by forming a graphene on a Si-face of the SiC substrate; depositing an Au film on the graphene of the graphene/SiC structure; forming a first transfer electrode pattern on the Au film by a first photolithography; etching the Au film uncovered by the first transfer electrode pattern through a wet etching; etching the graphene uncovered by the Au film through a plasma etching after the wet etching; forming a second transfer electrode pattern on the SiC substrate by a second photolithography; depositing an Au material on the Au film exposed by the second transfer electrode pattern and forming an Au electrode and then annealing. The graphene reduces potential barrier associated with the SiC interface, specific contact resistance of ohmic contact reaches the order of 10?7˜10?8 ?·cm2, and the method has high repeatability.

Abstract: The light emitting diode packaging structure includes a flexible substrate, a first adhesive layer, micro light emitting elements, a conductive pad, a redistribution layer, and an electrode pad. The first adhesive layer is disposed on the flexible substrate. The micro light emitting elements are disposed on the first adhesive layer and have a first surface facing to the first adhesive layer and an opposing second surface. The micro light emitting elements include a red micro light emitting element, a blue micro light emitting element, and a green micro light emitting element. The conductive pad is disposed on the second surface of the micro light emitting element. The redistribution layer covers the micro light emitting elements and the conductive pad. The electrode pad is disposed on the redistribution layer and is electrically connected to the circuit layer. A thickness of the flexible substrate is less than 100 um.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes channel structures vertically stacked over a substrate and a source/drain structure laterally attached to the channel structures in the first direction. The semiconductor structure also includes a dielectric wall structure laterally attached to the channel structures in the second direction. The second direction is different from the first direction. In addition, the dielectric wall structure includes a bottom portion and a cap layer formed over the bottom portion. The semiconductor structure also includes an isolation feature vertically overlapping the cap layer of the dielectric wall structure and a gate structure formed around the channel structures and covering a sidewall of the isolation feature.

Abstract: A method for preparing an aramid fiber electrochemical capacitor includes (1) immersing aramid fiber bundles in an aqueous solution; (2) adding polyvinylpyrrolidone into a silver ammonia solution to obtain a solution C, adding an aqueous glucose solution to the solution C to obtain aramid fiber bundles coated with silver nanoparticles; (3) adding the aramid fiber bundles into an aqueous solution containing ?-(2,3-glycidoxy) propyltrimethoxysilane; (4) adding the aramid fiber bundles coated by silver nanoparticles with epoxy groups into an ethanol containing carbon nanotubes with carboxyl groups; (5) adding the aramid fiber bundles with two-layered coatings into an aqueous solution containing pyrrole; (6) heating a mixture of a polyvinyl alcohol, an acid, and water to obtain a polyvinyl alcohol gel, immersing two strands of the aramid fiber bundles, carbon nanotubes and silver nanoparticle in the polyvinyl alcohol gel, and twisting the two strands together to obtain the aramid fiber electrochemical capacitor.

Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.