Abstract: The present invention relates to a method for treating spent pot liner material (SPL) containing carbon and/or an inorganic material, the method comprising: providing a plasma furnace having first and second electrodes for generating plasma and a crucible having a non-electrically conductive inner surface, heating the SPL material in the crucible in the presence of a flux material and an oxidant by passing an arc between the first and second electrodes via the SPL material to form a molten slag material and convert at least some of the carbon in the SPL material to CO and/or CO2 and/or incorporate at least some of the inorganic material into the molten slag material.

Abstract: The invention concerns a system for treating gases such as PFC or HFC with plasma, comprising: (6) pumping means (6) whereof the outlet is at a pressure substantially equal to atmospheric pressure, plasma generator (8), at the pump output, to produce a plasma at atmospheric pressure.

Abstract: The present invention relates to a method for treating spent pot liner material (SPL) containing carbon and/or an inorganic material, the method comprising: providing a plasma furnace having first and second electrodes for generating plasma and a crucible having a non-electrically conductive inner surface, heating the SPL material in the crucible in the presence of a flux material and an oxidant by passing an arc between the first and second electrodes via the SPL material to form a molten slag material and convert at least some of the carbon in the SPL material to CO and/or CO2 and/or incorporate at least some of the inorganic material into the molten slag material.

Abstract: The invention concerns a system for treating gases such as PFC or HFC with plasma, comprising: (6) pumping means (6) thereof the outlet is at a pressure substantially equal to atmospheric pressure, means (8), at the pump output, to produce a plasmas at atmospheric pressure.

Abstract: Provided is a novel method of cleaning a semiconductor process chamber having deposits on an inner surface thereof. The method involves: (a) introducing a cleaning gas comprising hydrogen chloride into the process chamber, wherein the cleaning gas is effective to react with and remove the deposits from the inner surface of the process chamber; (b) removing gas from the process chamber; and (c) monitoring at least a portion of the removed gas for a species indicative of an endpoint of the chamber cleaning. The invention allows for the cleaning of semiconductor process chambers in an efficient manner so as to reduce process down time and improve process throughput. The method can be applied to in-line analysis.