Abstract: A remote control system for gas detection and purification is disclosed and includes a remote control device, a gas detection module and a gas purification device. The remote control device includes a gas inlet and a gas outlet. The gas detection module is disposed in the remote control device and in communication with the gas outlet to detect the gas located in an indoor space. The gas detection module provides and outputs a gas detection datum, and the remote control device transmits an operation command via wireless transmission. The gas purification device is disposed in the indoor space and receives the operating instruction transmitted from the remote control device to be operated. When the gas purification device is under the activated state, the gas in the indoor space is purified, and the purification operation mode of the gas purification device is adjusted according to the first gas detection datum.

Abstract: A blood pressure detection device manufactured by a semiconductor process includes a substrate, a microelectromechanical element, a gas-pressure-sensing element, a driving-chip element, an encapsulation layer and a valve layer. The substrate includes inlet apertures. The microelectromechanical element and the gas-pressure-sensing element are stacked and integrally formed on the substrate. The encapsulation layer is encapsulated and positioned on the substrate. A flowing-channel space is formed above the microelectromechanical element and the gas-pressure-sensing element. The encapsulation layer includes an outlet aperture in communication with an airbag. The driving-chip element controls the microelectromechanical element, the gas-pressure-sensing element and valve units to transport gas.

Abstract: A gas detection purification device is disclosed and includes a main body, a purification unit, a gas guider, a gas detection module and a controlling-driving module. The main body includes an inlet, an outlet, an external socket and a gas-flow channel disposed between the inlet and the outlet. The purification unit is disposed in the gas-flow channel for filtering gas introduced through the gas-flow channel. The gas guider is disposed in the gas channel and located at a side of the purification unit. The gas is inhaled through the inlet, flows through the purification unit and is discharged out through the outlet. The gas detection module is plugged into or detached from the external socket. The controlling driving module is disposed within the main body and electrically connected to the gas guider to control the operation of the gas guider in an enabled state and a disabled state.

Abstract: An actuating and sensing module is disclosed and includes a bottom plate, a gas pressure sensor, a thin gas transportation device and a cover plate. The bottom plate includes a pressure relief orifice, a discharging orifice and a communication orifice. The gas pressure sensor is disposed on the bottom plate and seals the communication orifice. The thin gas transportation device is disposed on the bottom plate and seals the pressure relief orifice and the discharging orifice. The cover plate is disposed on the bottom plate and covers the gas pressure sensor and the thin gas-transportation device. The cover plate includes an intake orifice. The thin gas transportation device is driven to inhale gas through the intake orifice, the gas is then discharged through the discharging orifice by the thin gas transportation device, and a pressure change of the gas is sensed by the gas pressure sensor.

Abstract: A blood pressure device includes a first blood pressure measuring device, a second blood pressure measuring device, and a controller. The first blood pressure measuring device is to be worn on a first position of a wrist so as to obtain a first blood pressure information of the first position. The second blood pressure measuring device is to be worn on a second position of the wrist so as to obtain a second blood pressure information of the second position. The controller is electrically coupled to the first blood pressure measuring device and the second blood pressure measuring device so as to adjust tightness between the expanders and the user's skin, respectively. The controller receives, processes, and calculates a pulse transit time between the first blood pressure information and the second blood pressure information, and the controller obtains at least one blood pressure value based on the pulse transit time.

Abstract: A photodiode with improved response, particular in the blue light portion of the spectrum, is disclosed. An oxide window is formed adjacent a silicide junction. An etch stop layer is applied over the silicide junction, and the oxide window is then etched to form a thin film. A nitride layer is then applied. The resulting photodiode has increased transmission of blue light.

Abstract: A high electron mobility transistor (HEMT) device including a substrate, a channel layer, a barrier layer, a p-type gallium nitride (GaN) spacer, a gate electrode, a source electrode, and a drain electrode is provided. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer and has a protruding portion. The P-type GaN spacer is disposed on a side wall of the protruding portion. The gate electrode is disposed on the protruding portion and the P-type GaN spacer. The source electrode and the drain electrode are disposed on two sides of the gate electrode.

Abstract: Provided is a FinFET including a substrate, at least one fin and at least one gate. A portion of the at least one fin is embedded in the substrate. The at least one fin includes, from bottom to top, a seed layer, a stress relaxation layer and a channel layer. The at least one gate is across the at least one fin. A method of forming a FinFET is further provided.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a single crystal substrate, a source/drain structure and a nanowire structure. The source/drain structure is disposed on and contacts with the substrate. The nanowire structure is connected to the source/drain structure.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a metal gate on a substrate and a spacer around the metal gate, in which the metal gate comprises a high-k dielectric layer, a work function metal layer, and a low-resistance metal layer. Next, part of the high-k dielectric layer is removed to form an air gap between the work function metal layer and the spacer.

Abstract: A semiconductor device comprises a semiconductor substrate and a semiconductor fin. The semiconductor substrate has an upper surface and a recess extending downwards into the semiconductor substrate from the upper surface. The semiconductor fin is disposed in the recess and extends upwards beyond the upper surface, wherein the semiconductor fin is directly in contact with semiconductor substrate, so as to form at least one semiconductor hetero-interface on a sidewall of the recess.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a metal gate on a substrate and a spacer around the metal gate, in which the metal gate comprises a high-k dielectric layer, a work function metal layer, and a low-resistance metal layer. Next, part of the high-k dielectric layer is removed to form an air gap between the work function metal layer and the spacer.

Abstract: Provided is a FinFET including a substrate, at least one fin and at least one gate. A portion of the at least one fin is embedded in the substrate. The at least one fin includes, from bottom to top, a seed layer, a stress relaxation layer and a channel layer. The at least one gate is across the at least one fin. A method of forming a FinFET is further provided.

Abstract: Provided is a FinFET including a substrate, at least one fin and at least one gate. A portion of the at least one fin is embedded in the substrate. The at least one fin includes, from bottom to top, a seed layer, a stress relaxation layer and a channel layer. The at least one gate is across the at least one fin. A method of forming a FinFET is further provided.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a metal gate on a substrate and a spacer around the metal gate, in which the metal gate comprises a high-k dielectric layer, a work function metal layer, and a low-resistance metal layer. Next, part of the high-k dielectric layer is removed to form an air gap between the work function metal layer and the spacer.

Abstract: A method of fabricating an embedded nonvolatile memory device is disclosed. A semiconductor substrate having thereon a fin body protruding from an isolation layer is provided. A charge storage layer crossing the fin body is formed. An inter-layer dielectric layer is deposited on the semiconductor substrate. The inter-layer dielectric layer is polished to expose a top surface of the charge storage layer. The charge storage layer is then recess etched and cut into separate charge storage structures. A high-k dielectric layer is formed on the charge storage structures. A word line is formed on the high-k dielectric layer.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a single crystal substrate, a source/drain structure and a nanowire structure. The source/drain structure is disposed on and contacts with the substrate. The nanowire structure is connected to the source/drain structure.

Abstract: A semiconductor device comprises a semiconductor substrate and a semiconductor fin. The semiconductor substrate has an upper surface and a recess extending downwards into the semiconductor substrate from the upper surface. The semiconductor fin is disposed in the recess and extends upwards beyond the upper surface, wherein the semiconductor fin is directly in contact with semiconductor substrate, so as to form at least one semiconductor hetero-interface on a sidewall of the recess.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a single crystal substrate, a source/drain structure and a nanowire structure. The source/drain structure is disposed on and contacts with the substrate. The nanowire structure is connected to the source/drain structure.

Abstract: A semiconductor device comprises a semiconductor substrate and a semiconductor fin. The semiconductor substrate has an upper surface and a recess extending downwards into the semiconductor substrate from the upper surface. The semiconductor fin is disposed in the recess and extends upwards beyond the upper surface, wherein the semiconductor fin is directly in contact with semiconductor substrate, so as to form at least one semiconductor hetero-interface on a sidewall of the recess.