Abstract: Methods, systems, and devices for wireless communications are described. A user equipment (UE) may receive, from a base station, a radio resource control (RRC) reconfiguration message. The UE may reestablish a radio link control (RLC) entity based on receiving the RRC reconfiguration message and transmit an indication that the RLC entity has been reestablished at the UE. In some cases, the UE may receive a data message prior to receiving an acknowledgment for the indication that the RLC entity is reestablished. For example, the base station may retransmit the RRC reconfiguration message prior to sending an acknowledgment status report. The UE may discard the data message based on the data message being received prior to receiving the acknowledgment.

Abstract: A method for improving a heat dissipation capability of an oil-cooled motor, insulation paint, and a method for manufacturing the insulation paint. The method includes: performing insulation processing on a motor component by using insulation paint, where the motor component includes a stator winding and/or a rotor winding; and installing the motor component undergoing the insulation processing into an oil-cooled motor, where a basic component of the insulation paint is unsaturated polyesterimine modified by using an inorganic layered silicate. The insulation paint has high heat conductivity, high heat resistance, and low viscosity, and therefore can improve a heat dissipation capability of the oil-cooled motor in a use process, and reduce a temperature rise of the oil-cooled motor in the use process, thereby improving power of the oil-cooled motor and prolonging a service life of the oil-cooled motor.

Abstract: Stacked semiconductor die assemblies with multiple thermal paths and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a plurality of first semiconductor dies arranged in a stack and a second semiconductor die carrying the first semiconductor dies. The second semiconductor die can include a peripheral portion that extends laterally outward beyond at least one side of the first semiconductor dies. The semiconductor die assembly can further include a thermal transfer feature at the peripheral portion of the second semiconductor die. The first semiconductor dies can define a first thermal path, and the thermal transfer feature can define a second thermal path separate from the first semiconductor dies.

Abstract: An electronic device and a method for fabricating an antenna radiator are provided. The electronic device includes a circuit board, a support, a back cover, and a first antenna radiator located on the support, and a second antenna radiator located on one side of the back cover. The first antenna radiator and the second antenna radiator are electromagnetically coupled and connected. The first antenna radiator is able to radiate a wireless signal of a first wavelength, and the second antenna radiator is able to radiate a wireless signal of a second wavelength which is half of the first wavelength.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to transistor structures and methods of manufacture. The structure includes active metal lines separated by electrically floating metal layers which have a width less than a width of the active metal lines.

Abstract: Stacked semiconductor die assemblies with multiple thermal paths and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a plurality of first semiconductor dies arranged in a stack and a second semiconductor die carrying the first semiconductor dies. The second semiconductor die can include a peripheral portion that extends laterally outward beyond at least one side of the first semiconductor dies. The semiconductor die assembly can further include a thermal transfer feature at the peripheral portion of the second semiconductor die. The first semiconductor dies can define a first thermal path, and the thermal transfer feature can define a second thermal path separate from the first semiconductor dies.

Abstract: Stacked semiconductor die assemblies with multiple thermal paths and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a plurality of first semiconductor dies arranged in a stack and a second semiconductor die carrying the first semiconductor dies. The second semiconductor die can include a peripheral portion that extends laterally outward beyond at least one side of the first semiconductor dies. The semiconductor die assembly can further include a thermal transfer feature at the peripheral portion of the second semiconductor die. The first semiconductor dies can define a first thermal path, and the thermal transfer feature can define a second thermal path separate from the first semiconductor dies.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to transistor structures and methods of manufacture. The structure includes active metal lines separated by electrically floating metal layers which have a width less than a width of the active metal lines.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to transistor structures and methods of manufacture. The structure includes active metal lines separated by electrically floating metal layers which have a width less than a width of the active metal lines.

Abstract: Structures for a frequency divider, methods of fabricating a frequency divider, and method of using a frequency divider. A first interconnect line is configured to selectively conduct a first signal of a first frequency. A second interconnect line is coupled with the first interconnect line. The second interconnect line is configured to selectively conduct a second signal of a second frequency. The first frequency is less the second frequency.

Abstract: Structures for a frequency divider, methods of fabricating a frequency divider, and method of using a frequency divider. A first interconnect line is configured to selectively conduct a first signal of a first frequency. A second interconnect line is coupled with the first interconnect line. The second interconnect line is configured to selectively conduct a second signal of a second frequency. The first frequency is less the second frequency.

Abstract: Stacked semiconductor die assemblies with multiple thermal paths and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a plurality of first semiconductor dies arranged in a stack and a second semiconductor die carrying the first semiconductor dies. The second semiconductor die can include a peripheral portion that extends laterally outward beyond at least one side of the first semiconductor dies. The semiconductor die assembly can further include a thermal transfer feature at the peripheral portion of the second semiconductor die. The first semiconductor dies can define a first thermal path, and the thermal transfer feature can define a second thermal path separate from the first semiconductor dies.

Abstract: Stacked semiconductor die assemblies with multiple thermal paths and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a plurality of first semiconductor dies arranged in a stack and a second semiconductor die carrying the first semiconductor dies. The second semiconductor die can include a peripheral portion that extends laterally outward beyond at least one side of the first semiconductor dies. The semiconductor die assembly can further include a thermal transfer feature at the peripheral portion of the second semiconductor die. The first semiconductor dies can define a first thermal path, and the thermal transfer feature can define a second thermal path separate from the first semiconductor dies.

Abstract: Methods for reducing the junction temperature between an IC chip and its lid by including metal spacers in the TIM layer and the resulting devices are disclosed. Embodiments include providing a substrate, including integrated circuit devices, having front and back sides; forming vertical spacers on the backside of the substrate; providing a plate parallel to and spaced from the backside of the substrate; and forming a TIM layer, surrounding the vertical spacers, between the backside of the substrate and the plate.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to transistor structures and methods of manufacture. The structure includes active metal lines separated by electrically floating metal layers which have a width less than a width of the active metal lines.

Abstract: Methods for reducing the junction temperature between an IC chip and its lid by including metal spacers in the TIM layer and the resulting devices are disclosed. Embodiments include providing a substrate, including integrated circuit devices, having front and back sides; forming vertical spacers on the backside of the substrate; providing a plate parallel to and spaced from the backside of the substrate; and forming a TIM layer, surrounding the vertical spacers, between the backside of the substrate and the plate.

Abstract: A washing machine and a washing control method of the washing machine thereof. The washing machine includes an outer drum, an inner drum, an impeller, and a driving apparatus. The driving apparatus is a dual-rotor direct drive motor including two rotors and one stator. One rotor is axially connected to the inner drum, another rotor is axially connected to the impeller. During washing, the two rotors respectively drive the impeller and the inner drum to rotate independently, such that the inner drum and the impeller rotate opposite to each other, and after each rotation cycle, the inner drum and the impeller reversely rotate. The washing control method includes driving, the driving apparatus, the inner drum and the impeller to reverse asynchronously, so as to enable the impeller and the inner drum to rotate in a same direction within a time difference between reversals of the impeller and the inner drum.

Abstract: Stacked semiconductor die assemblies with multiple thermal paths and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a plurality of first semiconductor dies arranged in a stack and a second semiconductor die carrying the first semiconductor dies. The second semiconductor die can include a peripheral portion that extends laterally outward beyond at least one side of the first semiconductor dies. The semiconductor die assembly can further include a thermal transfer feature at the peripheral portion of the second semiconductor die. The first semiconductor dies can define a first thermal path, and the thermal transfer feature can define a second thermal path separate from the first semiconductor dies.

Abstract: Stacked semiconductor die assemblies with multiple thermal paths and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a plurality of first semiconductor dies arranged in a stack and a second semiconductor die carrying the first semiconductor dies. The second semiconductor die can include a peripheral portion that extends laterally outward beyond at least one side of the first semiconductor dies. The semiconductor die assembly can further include a thermal transfer feature at the peripheral portion of the second semiconductor die. The first semiconductor dies can define a first thermal path, and the thermal transfer feature can define a second thermal path separate from the first semiconductor dies.