Patents by Inventor Haoliang Qian

Haoliang Qian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230207726
    Abstract: An apparatus, a method, and an optical device for generating light. A conductive quantum well junction is positioned between a first electrode and a second electrode. The conductive quantum well junction is configured to enter into a resonant state to inelastically tunneling one or more electrons. The conductive quantum well junction may include a first dielectric layer, a third conductive layer, and a second dielectric layer. The third conductive layer may be positioned between the first dielectric layer and the second dielectric layer. The first dielectric layer may be coupled to the second electrode and the second dielectric layer is coupled to the first electrode.
    Type: Application
    Filed: May 28, 2021
    Publication date: June 29, 2023
    Inventors: Zhaowei Liu, Haoliang Qian
  • Patent number: 11002996
    Abstract: A metallic quantum well may be formed by interposing a layer of metallic well material two layers of barrier material. Two or more metallic quantum wells may be combined to form a coupled metallic quantum well. The absorption spectrum and the emission spectrum of the coupled metallic quantum well may be tuned by at least adjusting the dimensions of the individual metallic quantum wells and/or the materials forming the metallic quantum wells. The metallic quantum well and/or the coupled metallic quantum well may exhibit sufficient nonlinearity even at a miniaturized scale. As such, the metallic quantum well and/or coupled metallic quantum well may be used for a variety of on-chip applications including, for example, as part of an on-chip pulse limiter, an on-chip super-continuum generator, and/or the like.
    Type: Grant
    Filed: October 10, 2018
    Date of Patent: May 11, 2021
    Assignee: The Regents of the University of California
    Inventors: Zhaowei Liu, Yuzhe Xiao, Haoliang Qian
  • Publication number: 20190155067
    Abstract: A metallic quantum well may be formed by interposing a layer of metallic well material two layers of barrier material. Two or more metallic quantum wells may be combined to form a coupled metallic quantum well. The absorption spectrum and the emission spectrum of the coupled metallic quantum well may be tuned by at least adjusting the dimensions of the individual metallic quantum wells and/or the materials forming the metallic quantum wells. The metallic quantum well and/or the coupled metallic quantum well may exhibit sufficient nonlinearity even at a miniaturized scale. As such, the metallic quantum well and/or coupled metallic quantum well may be used for a variety of on-chip applications including, for example, as part of an on-chip pulse limiter, an on-chip super-continuum generator, and/or the like.
    Type: Application
    Filed: October 10, 2018
    Publication date: May 23, 2019
    Inventors: Zhaowei Liu, Yuzhe Xiao, Haoliang Qian