Patents by Inventor Haotian LU

Haotian LU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240170589
    Abstract: Provided are a photoelectric sensor and an electronic device. The photoelectric sensor includes a substrate, a plurality of photoelectric sensing elements, and a wall structure between two adjacent photoelectric sensing elements. The wall structure includes a first layer and a second layer stacked with the first layer. The first layer is arranged at a side of the second layer away from the substrate and includes a light-blocking material. At least one of the first layer or the second layer of the wall structure is arranged in a same layer as at least one layer of the photoelectric sensing element.
    Type: Application
    Filed: February 2, 2024
    Publication date: May 23, 2024
    Applicant: Shanghai Tianma Micro-Electronics Co., Ltd.
    Inventors: Fan XU, Bin ZHOU, Haotian LU, Kaidi ZHANG, Linzhi WANG, Zhen LIU, Baiquan LIN, Kerui XI
  • Publication number: 20240144891
    Abstract: Provided are a driver board, a display panel, and a display apparatus. The driver board includes a driver circuit. The driver circuit includes N pixel electrodes, N pixel switches, a data switch, and a storage capacitor, N is a positive integer, and N?2. The storage capacitor includes a reference electrode and a counter electrode. A control terminal of the pixel switch receives a gating signal, a first terminal of the pixel switch is connected to the counter electrode, and a second terminal of the pixel switch is connected to the pixel electrode. The driver board further includes data lines, and each data line is connected to the counter electrode via the data switch.
    Type: Application
    Filed: January 9, 2024
    Publication date: May 2, 2024
    Applicant: Shanghai Tianma Micro-Electronics Co., Ltd.
    Inventors: Haotian LU, Linzhi WANG, Baiquan LIN, Zhen LIU, Kerui XI, Kaidi ZHANG, Yifan XING, Xin XU, Huijun JIN
  • Publication number: 20240128283
    Abstract: A detection substrate including a substrate and a plurality of detection units disposed on a side of the substrate, each detection unit including at least an inorganic transistor, an organic transistor, and a photoelectric sensor element, the organic transistor including an organic semiconductor part, in a direction perpendicular to a plane of the substrate, a film layer where the organic semiconductor part is located being located on the side of the film layer where the inorganic transistor is located away from the substrate, the film layer where the organic semiconductor part is located being located on the side of a film layer where the photoelectric sensor element is located away from the substrate, the organic transistor of the detection unit being connected to a sensing electrode, the sensing electrode being located on the side of the film layer where the inorganic transistor is located away from the substrate.
    Type: Application
    Filed: December 28, 2022
    Publication date: April 18, 2024
    Inventors: Haotian LU, Linzhi WANG, Baiquan LIN, Kerui XI, Shun GONG, Yukun HUANG, Fan XU, Kaidi ZHANG
  • Publication number: 20230361769
    Abstract: Provided are a sensing circuit and a sensing method thereof, a sensor chip, and a display panel. The sensing circuit includes a first transistor including a first gate and a second gate, a first capacitor, a read circuit, and a bias compensation circuit. The first gate receives a sensing signal outputted by a sensor. The first capacitor is connected between the second gate and a first fixed potential signal terminal. The read circuit is connected between the first transistor and an output terminal of the sensing circuit. The bias compensation circuit is electrically connected to the first transistor and configured to input a bias voltage into the second gate of the first transistor. The bias voltage received by the second gate reduce the threshold voltage drift of the first transistor.
    Type: Application
    Filed: July 12, 2023
    Publication date: November 9, 2023
    Applicant: Shanghai Tianma Micro-Electronics Co., Ltd.
    Inventors: Yukun HUANG, Linzhi WANG, Kerui XI, Baiquan LIN, Zhenyu JIA, Aowen LI, Haotian LU