Abstract: A method for fabricating a plurality of Time-of-Flight sensor devices (1) comprises a step of providing a wafer (100) including a plurality of wafer portions (110) for a respective one of the Time-of-Flight sensor devices (1), wherein each of the wafer portions (110) includes a first light detecting area (10) and a second light detecting area (20) and a respective light emitter device (30). The respective light emitter device (30) and the respective first light detecting area (10) is encapsulated by a first volume (40) of a light transparent material (130), and the respective second light detecting area (20) is encapsulated by a second volume (50) of the light transparent material (130). Before singulation of the devices (1), an opaque material (60) is placed on the wafer portions (110) in a space (120) between the respective first and second volume (40, 50) of the light transparent material (130).

Abstract: The integrated smoke detection device comprises a carrier (1), a light source (2) arranged on or above the carrier, a light receiver (3) arranged on or above the carrier at a distance from the light source, and a polarizing member (7) arranged on or above the carrier, the light source emitting radiation (a, b) into the polarizing member. The polarizing member is configured to have a boundary surface (11) that linearly polarizes a reflected portion (d) of the radiation emitted by the light source, and an exit surface (12) that allows the reflected portion (d) to exit the polarizing member.

Abstract: A method of producing an optical sensor at wafer-level, comprising the steps of providing a wafer having a main top surface and a main back surface and arrange at or near the top surface of the wafer at least one first integrated circuit having at least one light sensitive component. Furthermore, providing in the wafer at least one through-substrate via for electrically contacting the top surface and back surface and forming a first mold structure by wafer-level molding a first mold material over the top surface of the wafer, such that the first mold structure at least partly encloses the first integrated circuit. Finally, forming a second mold structure by wafer-level molding a second mold material over the first mold structure, such that the second mold structure at least partly encloses the first mold structure.

Abstract: A sensor assembly for being mounted on a circuit board comprises an interposer with at least one opening extending between a first and a second main surface of the interposer. The interposer comprises at least two stress decoupling elements, each comprising a flexible structure formed by a respective portion of the interposer being partially enclosed by one of the at least one opening. A sensor die is connected to the flexible structures on the first main surface. At least two board connection elements are arranged on the first main surface and adapted for connecting the assembly to the circuit board.

Abstract: The optical sensor package comprises an optical sensor device with a sensor element arranged inside a housing comprising a cap. A diffuser is arranged in an aperture of the cap opposite the sensor element and prolongs the cap in the aperture or closes the aperture. The method comprises forming a cap with an aperture, arranging a diffusing material in the aperture, thus forming a diffuser, and after forming the diffuser, arranging an optical sensor device with a sensor element inside a housing that includes the cap, such that the sensor element is opposite the diffuser.

Abstract: The integrated smoke detection device comprises a carrier (1), a light source (2) arranged on or above the carrier, a light receiver (3) arranged on or above the carrier at a distance from the light source, and a polarizing member (7) arranged on or above the carrier, the light source emitting radiation (a, b) into the polarizing member. The polarizing member is configured to have a boundary surface (11) that linearly polarizes a reflected portion (d) of the radiation emitted by the light source, and an exit surface (12) that allows the reflected portion (d) to exit the polarizing member.

Abstract: A method for manufacturing optical sensor arrangements is provided. The method comprises providing at least two optical sensors on a carrier and providing a cover material on the side of the optical sensors facing away from the carrier. The method further comprises providing an aperture for each optical sensor on a top side of the cover material facing away from the carrier and forming at least one trench between the optical sensors from the carrier towards the top side of the cover material, the trench comprising inner walls. Moreover, the method comprises coating the inner walls with an opaque material, such that an inner volume of the trench is free of the opaque material, and singulating of the optical sensor arrangements along the at least one trench. Furthermore, a housing for an optical sensor is provided.

Abstract: A package for an optical sensor, comprises an optically opaque enclosure for forming a cavity when mounted onto a substrate and an optical element based on an optically translucent polymer. An aperture in the enclosure is designed to attach the optical element to the enclosure.

Abstract: A sensor assembly for being mounted on a circuit board comprises an interposer with at least one opening extending between a first and a second main surface of the interposer. The interposer comprises at least two stress decoupling elements, each comprising a flexible structure formed by a respective portion of the interposer being partially enclosed by one of the at least one opening. A sensor die is connected to the flexible structures on the first main surface. At least two board connection elements are arranged on the first main surface and adapted for connecting the assembly to the circuit board.

Abstract: An optical sensor arrangement for time-of-flight comprises a first and a second cavity separated by an optical barrier and covered by a cover arrangement. An optical emitter is arranged in the first cavity, a measurement and a reference photodetector are arranged in the second cavity. The cover arrangement comprises a plate and layers of material arranged on an inner main surface thereof. The layers comprise an opaque coating with a first and second aperture above the first cavity, and with a third and fourth aperture above the second cavity. The measurement photodetector is configured to detect light entering the second cavity through the fourth aperture. The second and the third aperture establish a reference path for light from the emitter to the reference photodetector.

Abstract: The semiconductor device comprises a semiconductor substrate (1) with a main surface (10) and a further main surface (11) opposite the main surface, a TSV (3) penetrating the substrate from the main surface to the further main surface, a metallization (13) of the TSV, an under-bump metallization (5) and a bump contact (6) at least partially covering the TSV at the further main surface. The TSV (3) comprises a cavity (15), which may be filled with a gas or liquid. An opening (15?) of the cavity is provided to expose the cavity to the environment.

Abstract: An integrated current sensor system has a printed circuit board with a magnetic field sensor with a sensor interface. The printed circuit board has a first side on which, isolated from the printed circuit board, a first current conductor is arranged with a longitudinal edge of a portion of the first current conductor being proximate to a sensitive area of sensor. The circuit board has a second side on which a second current conductor is, isolated from the printed circuit board, arranged, wherein a longitudinal edge of a portion of the second current conductor is arranged proximate to the sensitive area. The first and the second current conductor are electrically connected with at least one conductive via.

Abstract: An optical package is proposed comprising a carrier, an optoelectronic component, an aspheric lens, and a reflective layer. The carrier comprises electrical interconnections and the optoelectric component is arranged for emitting and/or detecting electromagnetic radiation in a specified wavelength range. Furthermore, the optoelectric component is mounted on the carrier or integrated into the carrier and electrically connected to the electric interconnections. The aspheric lens has an upper surface, a lateral surface, and a bottom surface and the bottom surface is arranged on or near the optoelectric component. The aspheric lens comprises a material which is at least transparent in the specified wavelength range. The reflective layer comprises a reflective material, wherein the reflective layer at least partly covers the lateral surface of the aspheric lens, and wherein the reflective material is at least partly reflective in the specified wavelength range.

Abstract: A method of producing an optical sensor at wafer-level, comprising the steps of providing a wafer having a main top surface and a main back surface and arrange at or near the top surface of the wafer at least one first integrated circuit having at least one light sensitive component. Furthermore, providing in the wafer at least one through-substrate via for electrically contacting the top surface and back surface and forming a first mold structure by wafer-level molding a first mold material over the top surface of the wafer, such that the first mold structure at least partly encloses the first integrated circuit. Finally, forming a second mold structure by wafer-level molding a second mold material over the first mold structure, such that the second mold structure at least partly encloses the first mold structure.

Abstract: The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).

Abstract: The semiconductor device comprises a semiconductor substrate (1) with a main surface (10) and a further main surface (11) opposite the main surface, a TSV (3) penetrating the substrate from the main surface to the further main surface, a metallization (13) of the TSV, an under-bump metallization (5) and a bump contact (6) at least partially covering the TSV at the further main surface. The TSV (3) comprises a cavity (15), which may be filled with a gas or liquid. An opening (15?) of the cavity is provided to expose the cavity to the environment.

Abstract: The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).

Abstract: An integrated current sensor system has a printed circuit board with a magnetic field sensor with a sensor interface. The printed circuit board has a first side on which, isolated from the printed circuit board, a first current conductor is arranged with a longitudinal edge of a portion of the first current conductor being proximate to a sensitive area of sensor. The circuit board has a second side on which a second current conductor is, isolated from the printed circuit board, arranged, wherein a longitudinal edge of a portion of the second current conductor is arranged proximate to the sensitive area. The first and the second current conductor are electrically connected with at least one conductive via.

Abstract: The chip scale current sensor package comprises an IC chip (1) including a sensor (5) for measuring a magnetic field, and an electrically conductive layer (2) applied to a main surface (10) of the IC chip. The sensor is arranged for a measurement of a magnetic field generated by an electric current (6) flowing in the electrically conductive layer, and the electrically conductive layer is insulated from contact pads (4) electrically connecting the IC.

Abstract: A package for an optical sensor, comprises an optically opaque enclosure for forming a cavity when mounted onto a substrate and an optical element based on an optically translucent polymer. An aperture in the enclosure is designed to attach the optical element to the enclosure.