Abstract: A substrate processing apparatus for heating a substrate is provided. The substrate processing apparatus can include a top and bottom planar member. A heater layer can be disposed between the top and the bottom planar member and held in place by evacuating a region between the two planar members. The heater layer can be made of alternating insulating and conducting layers with heater elements formed on the conducting layers in predetermined pattern.

Abstract: Systems and methods for fuel cell stack part serialization and tracking. In an embodiment, a barcode may be applied to a fuel cell stack part which may identify the fuel cell stack part. In an embodiment, the barcode may be applied as ink on a green fuel cell stack part prior to sintering. In an embodiment, a portion of a fuel cell stack part may be imaged and pattern recognition techniques may be utilized to identify the fuel cell stack part based on the unique features of fuel cell stack part. In an embodiment, portion of a fuel cell stack part may be measured to generate one or more series of unique volume/area values and one or more series of unique volume/area values may be utilized to identify the fuel cell stack part.

Abstract: Embodiments of the invention generally include a robot assembly comprising a robot operable to position a substrate at one or more points within a plane, and a motion assembly having a motor operable to position the robot in a direction generally parallel to a first direction. The motion assembly comprises a robot support interface having the robot coupled thereto, and one or more walls that form an interior region in which the motor is enclosed. The walls define an elongated opening through which the robot support interface travels, and the motor is operable to move the robot support interface laterally in the elongated opening. The motion assembly further comprises one or more fan assemblies that are in fluid communication with the interior region. The fan assemblies are operable to create a subatmospheric pressure in the interior region thereby causing gas to flow through the elongated opening into the interior region.

Abstract: Various methods of treating a chromium iron interconnect for a solid oxide fuel cell stack and coating the interconnect with a ceramic layer are provided.

Abstract: The present invention generally provides a cluster tool for processing a substrate. In one embodiment, the cluster tool comprises at least one processing rack, which comprises a first plurality of substrate processing chambers that are positioned adjacent to each other and aligned in a first direction, a second plurality of substrate processing chambers that are positioned adjacent to each other and adjacent to at least one of the first plurality of substrate processing chambers, the second plurality of substrate processing chambers being positioned in a second direction relative to the first direction, a first shuttle robot movable in the first direction for moving substrates between each of the first plurality of substrate processing chambers, and a second shuttle robot movable in the second direction for moving substrates between each of the second plurality of substrate processing chambers.

Abstract: Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, a cluster tool for processing a substrate includes a first processing rack, a first robot assembly and a second robot assembly operable to transfer substrates to substrate processing chambers in the first processing rack, and a horizontal motion assembly. The horizontal motion assembly includes one or more walls that form an interior region in which a motor is enclosed. The one or more walls defining an elongated opening through which a robot support interface travels, the robot support interface supporting a robot of the horizontal motion assembly.

Abstract: Various embodiments provide methods for testing a fuel cell interconnect including the steps of providing a fuel cell interconnect and performing a non-destructive test on the fuel cell interconnect comprising at least one of detecting a magnetic response of the interconnect, calculating a volume by optically illuminating the interconnect, detecting an acoustic response of the interconnect, and detecting a thermal response of the interconnect.

Abstract: An apparatus for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, a smaller system footprint, and a more repeatable wafer history. Embodiments provide for a cluster tool comprising first and second processing racks, each having two or more vertically stacked substrate processing chambers, a first robot assembly able to access the first processing rack from a first side, a second robot assembly able to access the first processing rack from a second side and the second processing rack from a first side, a third robot assembly able to access the second processing rack from a second side, and a fourth robot assembly able to access the first and second processing racks and to load substrates in a cassette.

Abstract: Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. Embodiments also provide for a method and apparatus that are used to improve the coater chamber, the developer chamber, the post exposure bake chamber, the chill chamber, and the bake chamber process results. Embodiments also provide for a method and apparatus that are used to increase the reliability of the substrate transfer process to reduce system down time.

Abstract: A rapid temperature change (RTC) system includes a bake plate assembly including a heat spreader; a heater substrate coupled to the heat spreader; and a heater layer coupled to the heater substrate. The RTC system also includes a passive chill structure positioned adjacent the bake plate assembly. The passive chill structure is moveable to make physical contact with the heater layer. The passive chill structure includes a chill plate and a thermal pad coupled to the chill plate. The RTC system further includes an active chill structure positioned adjacent the passive chill structure. The passive chill structure is moveable to make physical contact with the active chill structure.

Abstract: Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment of the cluster tool, grouping substrates together, and transferring and processing the substrates in groups of two or more, improves system throughput, and reduces the number of moves a robot has to make to transfer a batch of substrates between the processing chambers, thus reducing wear on the robot and increasing system reliability. Embodiments also provide for a method and apparatus that are used to increase the reliability of the substrate transfer process to reduce system down time.

Abstract: A substrate processing apparatus for heating a substrate is provided. The substrate processing apparatus can include a top and bottom planar member. A heater layer can be disposed between the top and the bottom planar member and held in place by evacuating a region between the two planar members. The heater layer can be made of alternating insulating and conducting layers with heater elements formed on the conducting layers in predetermined pattern.

Abstract: A method of operating a bake plate disposed in a semiconductor processing chamber having a face plate opposing the bake plate includes providing a temperature control signal to the bake plate and measuring a face plate temperature associated with the face plate. The method also includes determining a difference between the face plate temperature and a predetermined temperature and modifying the temperature control signal provided to the bake plate in response to the determined difference.

Abstract: Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool). In one embodiment, the cluster tool is adapted to perform a track lithography process in which a photosensitive material is applied to a substrate, patterned in a stepper/scanner, and then removed in a developing process completed in the cluster tool. In one embodiment of the cluster tool, substrates are grouped together in groups of two or more for transfer or processing to improve system throughput, reduce the number of moves a robot has to make to transfer a batch of substrates between the processing chambers, and thus increase system reliability. Embodiments also provide for a method and apparatus that are used to increase the reliability of the substrate transfer process to reduce system down time.

Abstract: Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. Embodiments also provide for a method and apparatus that are used to improve the coater chamber, the developer chamber, the post exposure bake chamber, the chill chamber, and the bake chamber process results. Embodiments also provide for a method and apparatus that are used to increase the reliability of the substrate transfer process to reduce system down time.

Abstract: An apparatus and method for measuring a height of an object above a surface includes a housing with a first portion having an upper surface and a lower surface and an extension portion extending a first distance from the lower surface of the first portion. The extension portion defines a cavity opposing the lower surface of the first portion. The apparatus further includes one or more actuators passing through the lower surface of the first portion of the housing and extending into the cavity. Additionally, the apparatus includes a plate supported by one or more flexible members coupled to the extension portion. The plate has a top surface and a bottom surface that lies in a plane substantially parallel to the surface. Moreover, the apparatus includes a plurality of sensors disposed at predetermined positions of the plate. Each of the plurality of sensors is responsive to a height measured between each of the plurality of sensors and the surface.

Abstract: An apparatus for supporting a substrate during semiconductor processing includes a substrate support structure having a first surface, a second surface opposing the first surface, and a groove recessed into the first surface and defining a peripheral portion of the substrate support structure. The substrate support structure is substantially free of guide pins. The apparatus also includes an annular sealing member coupled to the groove and a plurality of proximity pins projecting to a first height above the first surface. The apparatus further includes a plurality of purge ports passing from the second surface to the first surface, a plurality of vacuum ports passing from the second surface to the first surface, and a heating mechanism coupled to the substrate support structure.

Abstract: A method of clamping/declamping a semiconductor wafer on an electrostatic chuck in ambient air includes disposing the semiconductor wafer at a predetermined distance above a dielectric surface of the electrostatic chuck having one or more electrodes and applying a first voltage greater than a predetermined threshold to the one or more electrodes of the electrostatic chuck for a first time period. The method includes reducing the first voltage to a second voltage substantially equal to a self bias potential of the semiconductor wafer after the first time period. The method includes maintaining the second voltage for a second time period and adjusting the second voltage to a third voltage characterized by a polarity opposite to that of the first voltage and a magnitude smaller than the predetermined threshold. The method includes reducing the third voltage to a fourth voltage substantially equal to the second voltage after a third time period.

Abstract: An apparatus adapted to detect a particle present on a bevel of a wafer. The apparatus includes a substrate support and a sensor housing adapted to receive an edge of the wafer. The sensor housing includes one or more probe electrodes and one or more position sensors. The apparatus also includes a translatable stage coupled to the sensor housing. The translatable stage is adapted to control the distance between the bevel of the wafer and the one or more position sensors. The apparatus further includes electrical circuitry electrically coupled to the substrate support and the one or more probe electrodes and adapted to generate an electric field between the bevel of the wafer and the one or more probe electrodes, detection circuitry electrically coupled to the electrical circuitry, and a processor adapted to process electrical signals and thereby detect the particle present on the bevel of the wafer.

Abstract: Systems, devices and methods of measuring a flow of a liquid stream for a semiconductor process are provided. The liquid stream is delivered through a liquid delivery nozzle. The nozzle is adapted to deliver the liquid stream for the semiconductor process. The free stream extends from an upstream location near the nozzle to a downstream location. The stream is marked at the upstream location and measured at the downstream location to determine the flow.