Abstract: A seed crystal holder holds a SiC seed crystal while a SiC bulk single crystal is grown on the front surface of the seed crystal. The holder includes a back surface body with a bearing surface for bearing against a back surface of the SiC seed crystal. The holder includes a lateral mount for receiving the back surface body and the SiC seed crystal. The lateral mount has a projection located on an end facing the SiC seed crystal. The SiC seed crystal rests on the projection.

Abstract: An &agr;-SiC bulk single crystal is formed from an SiC gas phase by deposition of SiC on an SiC seed crystal. To enable an SiC bulk single crystal of the 15R type to be grown reproducibly and without restricting the seed crystal, the deposition takes place under a uniaxial tensile strength which includes a predetermined angle with the [0001] axis of the bulk single crystal, so that a rhombohedral crystal is formed.

Abstract: An MR imaging method wherein motion of an object to be imaged is examined during a preparation phase preceding the actual MR examination. The necessary sequences for the subsequent MR examination are modified during the examination to compensate for the motion based on motion parameters calculated during the preparation phase or motion parameters derived from the motion parameters calculated during the preparation phase based on a correlation between the motion parameters.

Abstract: A diagnostic imaging system, notably a magnetic resonance imaging system comprises a receiver antenna for picking-up magnetic resonance signals and an ultrasound probe for receiving ultrasound echoes. A reconstruction unit is arranged to reconstruct a diagnostic image from the magnetic resonance signals and the ultrasound echoes in particular, the magnetic resonance image and ultrasound images are registered in a common reference frame and geometric distortions in the ultrasound image are corrected on the basis of the magnetic resonance image. Different tissues types are distinguished in the magnetic resonance image and corrections are made for differences between ultrasound sound velocities in these tissue types. Further, information contained in the magnetic resonance signals can be displayed in combination in the ultrasound echoes.

Abstract: A method is described for growing at least one silicon carbide (SiC) single crystal by sublimation of a SiC source material. Silicon, carbon and a SiC seed crystal are introduced into a growing chamber. Then, the SiC source material is produced from the silicon and the carbon in a synthesis step that takes place before the actual growing. The growing of the SiC single crystal is then carried out immediately after the synthesis step. The carbon used is a C powder with a mean grain diameter of greater than 10 &mgr;m.

Abstract: A diagnostic imaging system, notably a magnetic resonance imaging system comprises a receiver antenna for picking-up magnetic resonance signals and an ultrasound probe for receiving ultrasound echoes. A reconstruction unit is arranged to reconstruct a diagnostic image from the magnetic resonance signals and the ultrasound echoes.

Abstract: The invention relates to a method of imaging the blood flow as a function of time in an object (3) to be examined, which method includes the following steps: a) acquisition of a series of X-ray projection images (Di; Ej) during administration of a contrast medium to the blood vessels in the object (3) to be examined, b) acquisition of an image data set (H; K) containing the course of the blood vessels in the object (3) to be examined, c) segmentation of the regions of the blood vessels in the individual X-ray projection images (Di; Ej) that are filled with contrast medium, d) encoding the image data set (H; K) in time by comparing the image data set (H; K) with the segmented X-ray projection images (Dj′; Fj), and e) displaying one or more images (B) formed from the time-encoded image data set (H′; R′) and representing the blood flow as a function of time. The invention also relates to a correspondingly constructed X-ray device.

Abstract: A device for the sublimation growth of an SiC single crystal, with foil-lined crucible. The device for producing an SiC single crystal includes a crucible with a crucible inner zone. Inside this zone, there is a storage area for storing a stock of solid SiC and a crystal area in which an SiC single crystal grows onto an SiC seed crystal. A heater device is arranged outside the crucible. On a side that faces the crucible inner zone, the crucible is lined with a foil of tantalum, tungsten, niobium, molybdenum, rhenium, iridium, ruthenium, hafnium or zirconium. As a result, the crucible is sealed and a reaction between the aggressive components of the SiC gas phase and the crucible wall is prevented.

Abstract: A seed crystal holder holds a SiC seed crystal while a SiC bulk single crystal is grown on the front surface of the seed crystal. The holder includes a back surface body with a bearing surface for bearing against a back surface of the SiC seed crystal. The holder includes a lateral mount for receiving the back surface body and the SiC seed crystal. The lateral mount has a projection located on an end facing the SiC seed crystal. The SiC seed crystal rests on the projection.

Abstract: A method for the sublimation growth of an SiC single crystal, involving heating up under growth pressure, is described. In the method for the sublimation growth of the SiC single crystal, a crucible holding a stock of solid SiC and an SiC seed crystal, onto which the SiC single crystal grows, is evacuated during a starting phase which precedes the actual growth phase and is then filled with an inert gas, until a growth pressure is reached in the crucible. Moreover, the crucible is initially heated to an intermediate temperature and then, in a heat-up phase, is heated to a growth temperature at a heat-up rate of at most 20° C./min. As a result, controlled seeding on the SiC seed crystal is achieved even during the heat-up phase.

Abstract: The invention relates to a method and a device for determining the position of a medical instrument (3) that is introduced into an object (1) to be examined and for imaging the vicinity of the medical instrument (3).

Abstract: The invention relates to an MR method where the motion of an object to be imaged is examined during a preparation phase preceding the actual MR examination and where the necessary sequences for the subsequent MR examination are modified during such examination in such a manner that the motion is compensated.

Abstract: An &agr;-SiC bulk single crystal is formed from an SiC gas phase by deposition of SiC on an SiC seed crystal. To enable an SiC bulk single crystal of the 15R type to be grown reproducibly and without restricting the seed crystal, the deposition takes place under a uniaxial tensile strength which includes a predetermined angle with the [0001] axis of the bulk single crystal, so that a rhombohedral crystal is formed.

Abstract: A device for producing a silicon carbide (SiC) single crystal contains a crucible having a storage region for holding a stock of solid SiC and having a crystal region for holding a SiC seed crystal. An insert made from glassy carbon is disposed in the crucible. In the method, solid SiC is sublimed as a result of the stock being heated and SiC in the gas phase is generated, which is conveyed to the SiC seed crystal, on which it grows as an SiC single crystal. A heat flux is controlled by an insert made from glassy carbon.

Abstract: A method is described for growing at least one silicon carbide (SiC) single crystal by sublimation of a SiC source material. Silicon, carbon and a SiC seed crystal are introduced into a growing chamber. Then, the SiC source material is produced from the silicon and the carbon in a synthesis step that takes place before the actual growing. The growing of the SiC single crystal is then carried out immediately after the synthesis step. The carbon used is a C powder with a mean grain diameter of greater than 10 &mgr;m.

Abstract: The invention relates to a method of imaging the blood flow as a function of time in an object (3) to be examined, which method includes the following steps:

Abstract: A device for producing a silicon carbide (SiC) single crystal contains a crucible having a storage region for holding a stock of solid SiC and having a crystal region for holding a SiC seed crystal. An insert made from glassy carbon is disposed in the crucible. In the method, solid SiC is sublimed as a result of the stock being heated and SiC in the gas phase is generated, which is conveyed to the SiC seed crystal, on which it grows as an SiC single crystal. A heat flux is controlled by an insert made from glassy carbon.

Abstract: A magnetic resonance method for imaging a curved portion of a body in which only MR signals in the curved portion of the body are generated by pulse sequences which include RF pulses and temporary magnetic fields. From the received MR signals an image of the curved portion can be reconstructed by use of linear transformations.

Abstract: In order to provide in an encapsulated pressurized gas insulated high voltage installation having multiple bus bars an interruption point in line with every current carrying conductor, which can be bridged by a movable conductor part and which forms a gap in a first end position of this conductor part, both conductor ends are surrounded by a shield which defines the gap. The movable conductor part rests in a second end position against an insulating sleeve and is brought through an insulating bearing ring. In the first end position, the movable conductor part is contained in a recess in an end of one of the conductor parts. The movable conductor part has an engagement surface for allowing a tool to grasp the movable conductor part to move it so as to bridge the gap.