Abstract: The present invention includes a memory device with a data memory and an error correction code control circuit. The data memory stores data parity information for error correction. The error correction code control circuit is configured to receive a selection signal indicative of whether an error correction mode is to be used. Power to access the portion of the memory storing the parity information is disabled when the error correction mode is enabled.

Abstract: The present invention includes a memory device with a data memory and an error correction code control circuit. The data memory stores data parity information for error correction. The error correction code control circuit is configured to receive a selection signal indicative of whether an error correction mode is to be used. Power to access the portion of the memory storing the parity information is disabled when the error correction mode is enabled.

Abstract: A memory includes an array of memory cells and an error correction code circuit. The error correction code circuit is configured to receive a first portion of a first data word from an external circuit and a second portion of the first data word from the array of memory cells, combine the first portion and the second portion to provide the first data word, and encode the first data word for writing to the array of memory cells.

Abstract: An electrical circuit comprising a first metal oxide silicon (MOS) n type field effect transistor (NFET) or p type field effect transistor (PFET) and a second MOS NFET or PFET of the same conductivity type as the first NFET or PFET, wherein the drain of the first NFET or PFET is directly connected to the source of the second NFET or PFET, and wherein the gate of the second NFET or PFET is at a voltage value which is equal to or lower than the drain voltage value of the second NFET or PFET in the case of an NFET and equal to or higher than the drain voltage value of the second NFET or PFET in the case of a PFET.

Abstract: One embodiment provides a memory device including a memory bank, a first receiver, and a second receiver. The memory bank includes memory cells. The first receiver is configured to receive a clock signal and provide a data clock signal based on the clock signal. The second receiver is configured to receive the clock signal and provide a command/address clock signal based on the clock signal. The first receiver provides the data clock signal to output read data from the memory cells. The second receiver provides the command/address clock signal to execute commands.

Abstract: A semiconductor integrated circuit device and method for reducing gate induced leakage current associated with circuits of the semiconductor electrical device, such as a semiconductor integrated circuit memory device. During a standby mode, a voltage supplied to a plurality of circuits is reduced so as to reduce gate induced leakage (GIDL) current associated with said plurality of circuits. During time intervals while in the standby mode, the voltage supplied to a subset of said plurality of circuits is increased to a level necessary for a refresh function associated with said subset of said plurality of circuits and then it is reduced upon completion of said refresh function. In the example a semiconductor memory device, the circuits that are manipulated in this manner are wordline driver circuits.

Abstract: A semiconductor integrated circuit device and method for reducing gate induced leakage current associated with circuits of the semiconductor electrical device, such as a semiconductor integrated circuit memory device. During a standby mode, a voltage supplied to a plurality of circuits is reduced so as to reduce gate induced leakage (GIDL) current associated with said plurality of circuits. During time intervals while in the standby mode, the voltage supplied to a subset of said plurality of circuits is increased to a level necessary for a refresh function associated with said subset of said plurality of circuits and then it is reduced upon completion of said refresh function. In the example a semiconductor memory device, the circuits that are manipulated in this manner are wordline driver circuits.

Abstract: A memory device (10) includes an array (12) of memory cells arranged in rows and columns. Preferably, each memory cell includes a pass transistor coupled to a storage capacitor. A row decoder (18) is coupled to rows of memory cells while a column decoder (14) is coupled to columns of the memory cells. The column decoder (14) includes an enable input. A variable delay (32) has an output coupled to the enable input of the column decoder (14). The variable delay (32) receives an indication (R/W?) of whether a current cycle is a read cycle or a write cycle. In the preferred embodiment, a signal provided at the output of the variable delay (32) is delayed if the current cycle is a read cycle compared to if the current cycle is a write cycle.

Abstract: A memory device (10) includes an array (12) of memory cells arranged in rows and columns. Preferably, each memory cell includes a pass transistor coupled to a storage capacitor. A row decoder is coupled to rows of memory cells while a column decoder (14) is coupled to columns of the memory cells. The column decoder (14) includes an enable input. A variable delay (32) has an output coupled to the enable input of the column decoder (14). The variable delay (32) receives an indication (R/W?) of whether a current cycle is a read cycle or a write cycle. In the preferred embodiment, a signal provided at the output of the variable delay (32) is delayed if the current cycle is a read cycle compared to if the current cycle is a write cycle.

Abstract: A memory device (10) includes an array (12) of memory cells arranged in rows and columns. Preferably, each memory cell includes a pass transistor coupled to a storage capacitor. A row decoder (18) is coupled to rows of memory cells while a column decoder (14) is coupled to columns of the memory cells. The column decoder (14) includes an enable input. A variable delay (32) has an output coupled to the enable input of the column decoder (14). The variable delay (32) receives an indication (R/W?) of whether a current cycle is a read cycle or a write cycle. In the preferred embodiment, a signal provided at the output of the variable delay (32) is delayed if the current cycle is a read cycle compared to if the current cycle is a write cycle.

Abstract: System and method for detecting a reference signal. A preferred embodiment comprises a latch (such as the latch 320) and a filter (such as the filter 325). The latch tracks a reference signal at its input and reflects the reference signal at its output. The filter can be coupled to the output of the latch and may inject a delay to help eliminate the effects of glitches and noise. When the reference signal reaches a specified value, a control signal from the filter causes the latch to store the reference signal. A delay imparted by the filter ensures that the latch does not store the reference signal until a finite amount of time after the reference signal reaches the specified value.

Abstract: System and method for detecting a reference signal. A preferred embodiment comprises a latch (such as the latch 320) and a filter (such as the filter 325). The latch tracks a reference signal at its input and reflects the reference signal at its output. The filter can be coupled to the output of the latch and may inject a delay to help eliminate the effects of glitches and noise. When the reference signal reaches a specified value, a control signal from the filter causes the latch to store the reference signal. A delay imparted by the filter ensures that the latch does not store the reference signal until a finite amount of time after the reference signal reaches the specified value.

Abstract: A memory device (10) includes an array (12) of memory cells arranged in rows and columns. Preferably, each memory cell includes a pass transistor coupled to a storage capacitor. A row decoder is coupled to rows of memory cells while a column decoder (14) is coupled to columns of the memory cells. The column decoder (14) includes an enable input. A variable delay (32) has an output coupled to the enable input of the column decoder (14). The variable delay (32) receives an indication (R/W′) of whether a current cycle is a read cycle or a write cycle. In the preferred embodiment, a signal provided at the output of the variable delay (32) is delayed if the current cycle is a read cycle compared to if the current cycle is a write cycle.

Abstract: Embodiments of the present invention generally provide a soft error-resistant latch circuit. The latch circuit generally includes first and second inverters, each formed by at least two transistors. At least one delay element decouples the gate of at least one of the transistors of one of the inverters from a diffusion area of at least one of the transistors of the other inverter.