Abstract: A product-substrate-to-carrier-substrate bond with a product substrate, which is bonded to a carrier substrate via a connection layer, wherein a soluble layer is arranged between the connection layer and the product substrate, and wherein a) the soluble layer is soluble due to an interaction with an electromagnetic radiation of a radiation source, and b) the connection layer and the carrier substrate are both at least predominantly transparent to the electromagnetic radiation transmitted through the connection layer, wherein a material of the soluble layer and the electromagnetic radiation are chosen such that an increase of temperature of the soluble layer caused by the interaction with the electromagnetic radiation is less than 50° C.

Abstract: A product-substrate-to-carrier-substrate bond with a product substrate, which is bonded to a carrier substrate via a connection layer, wherein a soluble layer is arranged between the connection layer and the product substrate, and wherein a) the soluble layer is soluble due to an interaction with an electromagnetic radiation of a radiation source, and b) the connection layer and the carrier substrate are both at least predominantly transparent to the electromagnetic radiation transmitted through the connection layer, wherein a material of the soluble layer and the electromagnetic radiation are chosen such that an increase of temperature of the soluble layer caused by the interaction with the electromagnetic radiation is less than 50° C.

Abstract: A method for bonding a product substrate to a carrier substrate via a connection layer, wherein a soluble layer is applied between the connection layer and the product substrate, and wherein a) the soluble layer is soluble due to an interaction with an electromagnetic radiation of a radiation source, and b) the connection layer and the carrier substrate are at least predominantly transparent to the electromagnetic radiation. A method for debonding a product substrate from a carrier substrate bonded to the product substrate via a connection layer, wherein a soluble layer is applied between the connection layer and the product substrate, and wherein a) the soluble layer is dissolved through an interaction with an electromagnetic radiation of a radiation source, and b) the connection layer and the carrier substrate are at least predominantly transparent to the electromagnetic radiation. A corresponding product-substrate-to-carrier-substrate bond is also disclosed.

Abstract: A method for bonding a product substrate to a carrier substrate via a connection layer, wherein a soluble layer is applied between the connection layer and the product substrate, and wherein a) the soluble layer is soluble due to an interaction with an electromagnetic radiation of a radiation source, and b) the connection layer and the carrier substrate are at least predominantly transparent to the electromagnetic radiation. A method for debonding a product substrate from a carrier substrate bonded to the product substrate via a connection layer, wherein a soluble layer is applied between the connection layer and the product substrate, and wherein a) the soluble layer is dissolved through an interaction with an electromagnetic radiation of a radiation source, and b) the connection layer and the carrier substrate are at least predominantly transparent to the electromagnetic radiation. A corresponding product-substrate-to-carrier-substrate bond is also disclosed.

Abstract: A method for treatment of a product wafer temporarily bonded on a carrier wafer with the following steps: grinding and/or backthinning of the product wafer on one flat side facing away from the carrier wafer to a product wafer thickness D of <150 ?m, especially <100 ?m, preferably <75 ?m, even more preferably <50 ?m, especially preferably <30 ?m, surface treatment of the flat side with means for reducing an especially structural intrinsic stress of the product wafer.

Abstract: A method for tacking of chips onto a substrate at chip positions which are distributed on a surface of the substrate. The method includes the following steps: formation or application of a function layer onto the substrate, removing the function layer from the substrate at the chip positions at least in the region of contacts to uncover the contacts, tacking chips onto one chip contact side of the function layer at the chip positions and contacting the chips with the contacts via contact elements.

Abstract: A method for producing a product wafer having chips thereon, comprising the steps of: processing the first side of the product wafer bonding the product wafer with its first side onto a first rigid carrier wafer with a first intermediate layer consisting of one first adhesion layer applied at least on the edge side, processing a second side of the product wafer, bonding of the product wafer with its second side on a second rigid carrier wafer with a second intermediate layer consisting of one second adhesion layer applied at least on the edge side, characterized in that the first intermediate layer and the second intermediate layer are made different such that the first carrier wafer can be separated selectively before the second carrier wafer.

Abstract: A method for tacking of chips onto a substrate at chip positions which are distributed on a surface of the substrate. The method includes the following steps: formation or application of a function layer onto the substrate, removing the function layer from the substrate at the chip positions at least in the region of contacts to uncover the contacts, tacking chips onto one chip contact side of the function layer at the chip positions and contacting the chips with the contacts via contact elements.

Abstract: A method for producing a product wafer having chips thereon, comprising the steps of: processing the first side of the product wafer bonding the product wafer with its first side onto a first rigid carrier wafer with a first intermediate layer consisting of one first adhesion layer applied at least on the edge side, processing a second side of the product wafer, bonding of the product wafer with its second side on a second rigid carrier wafer with a second intermediate layer consisting of one second adhesion layer applied at least on the edge side, characterized in that the first intermediate layer and the second intermediate layer are made different such that the first carrier wafer can be separated selectively before the second carrier wafer.

Abstract: A method for treatment of a product wafer temporarily bonded on a carrier wafer with the following steps: grinding and/or backthinning of the product wafer on one flat side facing away from the carrier wafer to a product wafer thickness D of <150 ?m, especially <100 ?m, preferably <75 ?m, even more preferably <50 ?m, especially preferably <30 ?m, surface treatment of the flat side with means for reducing an especially structural intrinsic stress of the product wafer.