Abstract: A light emitting device (A) includes a semiconductor die (100).

Abstract: A light emitting device (A) includes a semiconductor die (100).

Abstract: A light emitting diode (10) has a backside and a front-side with at least one n-type electrode (14) and at least one p-type electrode (12) disposed thereon defining a minimum electrodes separation (delectrodes). A bonding pad layer (50) includes at least one n-type bonding pad (64) and at least one p-type bonding pad (62) defining a minimum bonding pads separation (dpads) that is larger than the minimum electrodes separation (delectrodes). At least one fanning layer (30) interposed between the front-side of the light emitting diode (10) and the bonding pad layer (50) includes a plurality of electrically conductive paths passing through vias (34, 54) of a dielectric layer (32, 52) to provide electrical communication between the at least one n-type electrode (14) and the at least one n-type bonding pad (64) and between the at least one p-type electrode (12) and the at least one p-type bonding pad (62).

Abstract: An LED device (90) includes: an epitaxial structure (100) having a plurality of layers of semiconductor material and forming an active light-generating region (120) which generates light in response to electrical power being supplied to the LED device (90); and, a substrate (200) that is substantially transparent in a wavelength range corresponding to the light generated by the active light-generating region (120). The substrate has first and second opposing end faces (202, 206) and a plurality of side walls (210) extending therebetween, including a first side wall having a first portion thereof that defines a first surface (212, 214, 216, 218) which is not substantially normal to the first face (202) of the substrate (200). The epitaxial structure (100) is disposed on the first face (202) of the substrate (200).

Abstract: A p-type contact (30) is disclosed for flip chip bonding and electrically contacting a p-type group III-nitride layer (28) of a group III-nitride flip chip light emitting diode die (10) with a bonding pad (60). A first palladium layer (42) is disposed on the p-type group III-nitride layer (28). The first palladium layer (42) is diffused through a native oxide of the p-type group III-nitride layer (28) to make electrical contact with the p-type group III-nitride layer (28). A reflective silver layer (44) is disposed on the first palladium layer (42). A second palladium layer (46) is disposed on the silver layer (44). A bonding stack (48) including at least two layers (50, 52, 54) is disposed on the second palladium layer (46). The bonding stack (48) is adapted for flip chip bonding the p-type layer (28) to the bonding pad (60).

Abstract: In a method for fabricating a flip-chip light emitting diode device, a submount wafer is populated with a plurality of the light emitting diode dies. Each device die is flip-chip bonded to the submount. Subsequent to the flip-chip bonding, a growth substrate is removed. The entire submount is immersed in the etchant solution, exposed to the light for a prespecified period of time, removed from the solution, dried and diced into a plurality of LEDs., The LEDs are immediately packaged without any further processing.

Abstract: A flip-chip LED device (10) includes a plurality of group III-nitride semiconductor layers (22) defining a p/n junction and including a top p-type group III-nitride layer (28), and a p-contact (30, 30?, 30?) for flip-chip bonding the top p-type group III-nitride layer. The p-contact includes an aluminum layer (32) disposed on the top p-type group III-nitride layer (28), and an interface layer (40, 66, 72, 80) disposed between the aluminum layer and the top p-type group III-nitride layer. The interface layer reduces a contact resistance between the aluminum layer (32) and the top p-type group III-nitride layer (28). The interface layer comprises one or more group III-nitride layers.

Abstract: A light-emitting package includes a substantially transparent substrate having a first surface and a second surface including a lens. The package also includes a light-emitting diode (LED) adapted to emit light having a predetermined wavelength, the LED being secured over the first surface of the substantially transparent substrate. The second surface of the substrate defines a principal light emitting surface of the package. The lens at the second surface has a grating pattern that matches the predetermined wavelength of the light emitted from the LED for controlling the emission geometry of the light emitted by the package. The grating pattern has a radial configuration including a series of circles that are concentric.

Abstract: A light-emitting microelectronic package includes a light-emitting diode (110) having a first region (114) of a first conductivity type, a second region (116) of a second conductivity type, and a light-emitting p-n junction (118) between the first and second regions. The light-emitting diode defines a lower contact surface (120) and a mesa (122) projecting upwardly from the lower contact surface. The first region (114) of a first conductivity type is disposed in the mesa (122) and defines a top surface of the mesa, and the second region (116) of a second conductivity type defines the lower contact surface that substantially surrounds the mesa (122). The mesa includes at least one sidewall (130) extending between the top surface (124) of the mesa and the lower contact surface (120), the at least one sidewall (130) having a roughened surface for optimizing light extraction from the package.

Abstract: A sapphire wafer having a thickness greater than 125 microns and having devices disposed thereon is laser scribed to form a grid array pattern of laser scribe lines laser scribed into the sapphire wafer. The sapphire wafer is separated along the laser scribe lines to separate a plurality of device dice defined by the grid array pattern of laser scribe lines. Each device die includes (i) a device and (ii) a portion of the sapphire wafer having the thickness greater than 125 microns. In some embodiments, a GaN LED device die includes a GaN based LED device, and a sapphire substrate supporting the GaN based LED device. The sapphire substrate has: (i) a thickness greater than 125 microns effective for increased light extraction due to a lower critical angle for total internal reflection; and (ii) sides generated by laser scribing.

Abstract: Light emitting diodes are provided with electrode and pad structures that facilitate current spreading and heat sinking. A light emitting diode may be formed as a die with a stacked structure having a first region and a mesa projecting from a surface of the first region. A first electrode may substantially cover the mesa and have a plurality of pads disposed thereon maximizing a contact area in relation to the first electrode. A second electrode may be disposed as a trace on the surface of the first region, the trace having a spiral, segmented/interdigitated, loop or pattern. Optionally, the trace includes corner spikes projecting outwardly toward edges of the first electrode.

Abstract: A flip chip light emitting diode (12) includes a light-transmissive substrate (10) with a base semiconducting layer (40) disposed thereupon. A conductive mesh (18) is disposed on the base semiconducting layer (40) and is in electrically conductive contact therewith. Light-emitting micromesas (30) are disposed in openings (20) of the conductive mesh (18). Each light emitting micromesa (30) has a topmost layer (46) of a second conductivity type that is opposite the first conductivity type. A first conductivity type electrode (14) is disposed on the base semiconducting layer (40) and is in electrical communication with the electrically conductive mesh (18). An insulating layer (60) is disposed over the electrically conductive mesh (18). A second conductivity type electrode layer (24) is disposed over the insulating layer (60) and the light-emitting micromesas (30). the insulating layer (60) insulates the second conductivity type electrode layer (24) from the electrically conductive mesh (18).

Abstract: A light emitting semiconductor device die (10, 110, 210, 310) includes an electrically insulating substrate (12, 112). First and second spatially separated electrodes (60, 62, 260, 262, 360, 362) are disposed on the electrically insulating substrate. The first and second electrodes define an electrical current flow direction directed from the first electrode to the second electrode. A plurality of light emitting diode mesas (30, 130, 130?, 230, 330) are disposed on the substrate between the first and second spatially separated electrodes. Electrical series interconnections (50, 150, 250, 350) are disposed on the substrate between neighboring light emitting diode mesas. Each series interconnection carries electrical current flow between the neighboring mesas in the electrical current flow direction.

Abstract: A flip-chip LED device (10) includes a plurality of group III-nitride semiconductor layers (22) defining a p/n junction and including a top p-type group III-nitride layer (28), and a p-contact (30, 30?, 30”) for flip-chip bonding the top p-type group III-nitride layer. The p-contact includes an aluminum layer (32) disposed on the top p-type group III-nitride layer (28), and an interface layer (40, 66, 72, 80) disposed between the aluminum layer and the top p-type group III-nitride layer. The interface layer reduces a contact resistance between the aluminum layer (32) and the top p-type group III-nitride layer (28). The interface layer comprises one or more group III-nitride layers.

Abstract: A light emitting diode (10) has a backside and a front-side with at least one n-type electrode (14) and at least one p-type electrode (12) disposed thereon defining a minimum electrodes separation (delectrodes). A bonding pad layer (50) includes at least one n-type bonding pad (64) and at least one p-type bonding pad (62) defining a minimum bonding pads separation (dpads) that is larger than the minimum electrodes separation (delectrodes). At least one fanning layer (30) interposed between the front-side of the light emitting diode (10) and the bonding pad layer (50) includes a plurality of electrically conductive paths passing through vias (34, 54) of a dielectric layer (32, 52) to provide electrical communication between the at least one n-type electrode (14) and the at least one n-type bonding pad (64) and between the at least one p-type electrode (12) and the at least one p-type bonding pad (62).

Abstract: A light emitting diode incorporating an active emitting layer (14) overlying a transparent substrate (10) is provided with a reflective diffraction grating (30) on the bottom surface of the substrate. Emitted light passing downwardly through the substrate is diffracted outwardly toward edges (21) of the substrate and passes out of the die through the edges. This effect enhances the external quantum efficiency of the diode.

Abstract: An improved method for producing optoelectronic devices such as light emitting diodes or laser diodes is provided. Light emitting diodes or laser diodes are provided with improved light extraction. Epitaxial layers including a light emitting p-n junction are deposited on a substrate, and separations are cut through the epitaxial layers to provide a structure including a plurality of individual dies on the substrate. The structure is mounted on a submount and the substrate is removed. An index matching material is then attached to improve light extraction from the optoelectronic device.

Abstract: A light-emitting microelectronic package includes a light-emitting diode (110) having a first region (114) of a first conductivity type, a second region (116) of a second conductivity type, and a light-emitting p-n junction (118) between the first and second regions. The light-emitting diode defines a lower contact surface (120) and a mesa (122) projecting upwardly from the lower contact surface. The first region (114) of a first conductivity type is disposed in the mesa (122) and defines a top surface of the mesa, and the second region (116) of a second conductivity type defines the lower contact surface that substantially surrounds the mesa (122). The mesa includes at least one sidewall (130) extending between the top surface (124) of the mesa and the lower contact surface (120), the at least one sidewall (130) having a roughened surface for optimizing light extraction from the package.

Abstract: A light-emitting package (510) includes a substantially transparent substrate (526) having a first surface (550) and a second surface (552), and a light-emitting diode (LED) (518) adapted to emit light having a predetermined wavelength, the LED (518) being secured over the first surface (550) of the substantially transparent substrate (526). The second surface (552) of the substrate defines a principal light emitting surface of the package, and includes a grating pattern (554) that matches the predetermined wavelength of the light emitted from the LED (518) for controlling the emission geometry of the light emitted by the package.

Abstract: Light emitting diodes are provided with electrode and pad structures that facilitate current spreading and heat sinking. A light emitting diode may be formed as a die with a stacked structure having a first region and a mesa projecting from a surface of the first region. A first electrode may substantially cover the mesa and have a plurality of pads disposed thereon maximizing a contact area in relation to the first electrode. A second electrode may be disposed as a trace on the surface of the first region, the trace having a spiral, segmented/interdigitated, loop or pattern. Optionally, the trace includes corner spikes projecting outwardly toward edges of the first electrode.