Abstract: The present disclosure provides a method for increased target utilization within a sputtering system. A plurality of targets are provided wherein each target is operatively connected to a central axis. An ion beam is generated within the sputtering system. The generated ion beam is directed at a first location of a first target for a first time period. Each target is moved by rotating the central axis. The generated ion beam is directed at a second location of the first target for a second time period.

Abstract: The present disclosure provides several methods for processing a substrate within a shutterless ion beam etching (IBE) system or shutterless ion assist ion beam deposition (IBD) system while preventing electrostatic damage to the substrate. In the IBE, at an etch completion, the ion energy to the ion source is reduced to less than 20 electron volts while at least one of the devices of the plurality of devices on the top surface of the substrate is exposed to a portion of the ion beam. In the IBD, at a deposition ion assist completion, the ion energy from the second ion source is reduced to less than 20 electron volts while at least one of the devices of the plurality of devices on the top surface of the substrate is exposed to the second ion beam.

Abstract: The present disclosure provides a method of processing a substrate within an ion beam system. The substrate has a top surface that has a plurality of features, an edge and a bottom surface. The substrate is placed on a wafer stage and an energetic particle beam having a radial flux distribution over at least a portion of a major dimension thereof is ignited. The energetic particle beam is stabilized while the bottom surface of the substrate is oriented toward the major dimension of the energetic particle beam. The wafer stage with the substrate is oriented so that the top surface of the substrate is exposed to the major dimension of the energetic particle beam. After stabilization of the energetic particle beam, the plurality of features on the top surface of the substrate are exposed to the energetic particle beam in a treatment zone.

Abstract: The present disclosure provides a method for increased target utilization within a sputtering system. A plurality of targets are provided wherein each target is operatively connected to a central axis. An ion beam is generated within the sputtering system. The generated ion beam is directed at a first location of a first target for a first time period. Each target is moved by rotating the central axis. The generated ion beam is directed at a second location of the first target for a second time period.

Abstract: The present disclosure provides a method of achieving an integral number of sweeps within an ion beam. A substrate having a fiducial is placed on a wafer stage within the ion beam system. An energetic particle beam is generated within the ion beam system. The substrate is exposed to the energetic particle beam while the wafer stage with the substrate is rotated clockwise so that the fiducial of the substrate travels a sweep distance in a clockwise direction at a first speed and the fiducial of the substrate travels the same sweep distance in a counterclockwise direction at a second speed. The exposure of the substrate to the energetic particle beam is discontinued when the number of complete/full sweeps in the clockwise direction equals the number of complete/full sweeps in the counterclockwise direction.

Abstract: The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam etch process to correct asymmetry of etching between the inboard side and the outboard side of device structures on a wafer, while maintaining the overall uniformity of etch across the full wafer.

Abstract: The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam deposition or etch process to correct asymmetry of depositing or etching between the inboard side and the outboard side of device structures on a wafer, while maintaining the overall uniformity of the respective deposition or etch across the full wafer.

Abstract: The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam etch process to correct asymmetry of etching between the inboard side and the outboard side of device structures on a wafer, while maintaining the overall uniformity of etch across the full wafer.

Abstract: The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam etch process to correct asymmetry of etching between the inboard side and the outboard side of device structures on a wafer, while maintaining the overall uniformity of etch across the full wafer.

Abstract: The present invention provides an improved plasma source configuration comprising a vacuum chamber having the source. A dielectric member is in communication with the vacuum chamber and surrounded by the plasma source. A high aspect ratio gap is formed between a film breaker and the dielectric member.

Abstract: The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam etch process to correct asymmetry of etching between the inboard side and the outboard side of device structures on a wafer, while maintaining the overall uniformity of etch across the full wafer.

Abstract: A shaper mask for particle flux includes a central portion extending from a body of the shaper mask along a first axis to block at least a first portion of a particle flux through the shaper mask from a first direction. The mask also includes at least one off-axis portion. Each off-axis portions extends from the body of the shaper mask along a respective second axis different from the first axis. Each off-axis portion is shaped to block a respective second portion of the particle flux traveling through the shaper mask from a second direction different from the first direction.