Patents by Inventor Hariyanto Gunawan

Hariyanto Gunawan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8963534
    Abstract: A triaxial piezoelectric sensor includes a PVDF layer, a first line layer, and a second line layer. The PVDF layer has multiple first electrodes and multiple second electrodes. Each first electrodes corresponds to each second electrodes for forming directions of polarization along the X-Y-Z axes. The first line layer has multiple first electrical connection portions and multiple first signal lines. Each first electrical connection portions corresponds to each first electrodes. The second line layer has multiple second electrical connection portions and multiple second signal lines. Each second electrical connection portions corresponds to each second electrodes. The PVDF layer is sandwiched between the first line layer and the second line layer. When an external force is applied to the PVDF layer, the first signal lines and the second signal lines transmit electrical signals according to the deformation of the PVDF layer.
    Type: Grant
    Filed: April 4, 2013
    Date of Patent: February 24, 2015
    Assignee: Chung-Yuan Christian University
    Inventors: Yung Ting, Sheuan-Perng Lin, Hariyanto Gunawan
  • Patent number: 8937426
    Abstract: A manufacturing method of polarizing polyvinylidene fluoride (PVDF) piezoelectric film without metalized electrode includes providing a polyvinylidene fluoride (PVDF) piezoelectric film that is stretched into ? phase; providing two glass substrates having an indium tin oxide (ITO) layer respectively, wherein the PVDF piezoelectric film is located between the two glass substrates, and the two ITO layers are coated located separately on top of and below the PVDF piezoelectric film; and imposing a DC electric field onto two ITO layers, wherein the DC electric field of polarization is 400 to 900 kV/cm approximately.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: January 20, 2015
    Assignee: Chung-Yuan Christian University
    Inventors: Yung Ting, Sheuan-Perng Lin, Hariyanto Gunawan
  • Publication number: 20140002058
    Abstract: A triaxial piezoelectric sensor includes a PVDF layer, a first line layer, and a second line layer. The PVDF layer has multiple first electrodes and multiple second electrodes. Each first electrodes corresponds to each second electrodes for forming directions of polarization along the X-Y-Z axes. The first line layer has multiple first electrical connection portions and multiple first signal lines. Each first electrical connection portions corresponds to each first electrodes. The second line layer has multiple second electrical connection portions and multiple second signal lines. Each second electrical connection portions corresponds to each second electrodes. The PVDF layer is sandwiched between the first line layer and the second line layer. When an external force is applied to the PVDF layer, the first signal lines and the second signal lines transmit electrical signals according to the deformation of the PVDF layer.
    Type: Application
    Filed: April 4, 2013
    Publication date: January 2, 2014
    Applicant: CHUNG-YUAN CHRISTIAN UNIVERSITY
    Inventors: Yung TING, Sheuan-Perng LIN, Hariyanto GUNAWAN
  • Publication number: 20130175900
    Abstract: A manufacturing method of polarizing polyvinylidene fluoride (PVDF) piezoelectric film without metalized electrode includes providing a polyvinylidene fluoride (PVDF) piezoelectric film that is stretched into B phase; providing two glass substrates having an indium tin oxide (ITO) layer respectively, wherein the PVDF piezoelectric film is located between the two glass substrates, and the two ITO layers are coated located separately on top of and below the PVDF piezoelectric film; and imposing a DC electric field onto two ITO layers, wherein the DC electric field of polarization is 400 to 900 kV/cm approximately.
    Type: Application
    Filed: April 27, 2012
    Publication date: July 11, 2013
    Inventors: YUNG TING, Sheuan-Perng Lin, Hariyanto Gunawan