Abstract: A method of resist stripping for use during fabrication of semiconductor devices. A semiconductor substrate with a resist material formed thereon, such as a silicon wafer, is positioned in a sealed chamber in communication with a plasma-generating source. A gaseous material which includes a reducing agent is passed through the plasma-generating source to produce a plasma stream. The plasma stream is directed at the semiconductor substrate for a predetermined period of time to remove the resist material from the semiconductor substrate. A reducing environment is produced in the sealed chamber by the plasma stream, which can passivate and strip the resist material simultaneously.

Abstract: A method of resist stripping for use during fabrication of semiconductor devices. A semiconductor substrate with a resist material formed thereon, such as a silicon wafer, is positioned in a sealed chamber in communication with a plasma generating source. A gaseous material which includes a reducing agent is passed through the plasma generating source to produce a plasma stream The plasma stream is directed at the semiconductor substrate for a predetermined period of time to remove the resist material from the semiconductor substrate. A reducing environment is produced in the sealed chamber by the plasma stream, which can passivate and strip the resist material simultaneously.

Abstract: A method of resist stripping for use during fabrication of semiconductor devices. A semiconductor substrate with a resist material formed thereon, such as a silicon wafer, is positioned in a sealed chamber in communication with a plasma generating source. A gaseous material which includes a reducing agent is passed through the plasma generating source to produce a plasma stream. The plasma stream is directed at the semiconductor substrate for a predetermined period of time to remove the resist material from the semiconductor substrate. A reducing environment is produced in the sealed chamber by the plasma stream, which can passivate and strip the resist material simultaneously.

Abstract: A method of resist stripping for use during fabrication of semiconductor devices. A semiconductor substrate with a resist material formed thereon, such as a silicon wafer, is positioned in a sealed chamber in communication with a plasma generating source. A gaseous material which includes a reducing agent is passed through the plasma generating source to produce a plasma stream. The plasma stream is directed at the semiconductor substrate for a predetermined period of time to remove the resist material from the semiconductor substrate. A reducing environment is produced in the sealed chamber by the plasma stream, which can passivate and strip the resist material simultaneously.

Abstract: A method of preventing low temperature dry etch deposit on a semiconductor substrate wafer comprises:ceasing injection of reactive gas to within a dry etching reactor at substantial completion of a selective etch while maintaining sufficient power to the reactor to maintain gases therein in a plasma state; andsubstantially evacuating the reactive gas plasma from the reactor before decreasing power to the reactor below that which is sufficient to maintain gases therein in the plasma state.