Abstract: A long life high current density hollow cathode electron beam source for use in various E-beam apparatus which uses an ionizable gas within the hollow cathode. Bombardment of an electron emissive surface within the hollow cathode by energetic gas ions causes electrons to be emitted by secondary emission rather than thermionic emission effects. Once initialized by an external ionization voltage the device is essentially self sustaining and operates near room temperature, rather than at thermionic emission temperatures, and with reduced voltages.

Abstract: A plasma sputter etching/deposition system comprising an electron-emitting hollow cathode arc-source combined with a conventional plasma sputter etching/deposition system such as a magnetron. The electrons emitted are coupled into the intrinsic high energy, e.g., magnetic field and are accelerated by the plasma potential and cause a significant increase plasma density. The resultant combination allows much greater sputtering/deposition efficiency than was possible with previous devices. According to a further aspect of the invention, switched operation is possible, whereby etching may vary from isotropic to anisotropic. A side discharge hollow cathode structure is also described for enhancing certain sputtering/deposition processes, wherein electrons may be emitted from one or more openings at the side of a hollow cathode chamber to achieve more uniform electron emission in a large process chamber.

Abstract: Apparatus and method for generating low energy, high intensity ion beams. A Hall current ion source is provided to conduct many integrated circuit fabrication processes which require low energy ion bombardment such as surface cleaning. Ion sources are provided which have tapered magnetic pole pieces for controlling the dispersion pattern of the ion beam.

Abstract: This ion beam system provides an ion beam pattern which is produced without the need for a mask. A programmable grid is used in combination with an ion beam source, where the apertures of the programmable grid can have electrical potentials associated therewith which either extract ions or impede the movement of ions through the apertures. Depending upon the electrical biasing provided to each of the apertures of the grid, different patterns of ions can be extracted through the grid. By changing the electrical bias at different locations on the programmable grid, these different patterns are produced. The patterns can be used for many applications, including patterned deposition, patterned etching, and patterned treatment of surfaces.

Abstract: An electron-bombardment ion source includes means defining a chamber for containing an ionizable gas together with means for introducing such gas into that chamber. Disposed therein is an anode and an electron-emissive cathode. The potential impressed between the anode and the cathode to effect electron emission at a sufficient velocity to ionize the gas. Also included are means for accelerating ions out of the chamber together with means for establishing a magnetic field within the chamber that increases the efficiency of ionization of the gas by the electrons. Mounted within the chamber is an anode of non-magnetic material that defines an essentially continuous and smooth surface which encloses substantially all of the volume within which the ionization occurs except the exit for the accelerated ions out of the chamber. The entire design is such as to ensure ready removability of the different components for quick and easy cleaning.

Abstract: Method and apparatus for generating high current, negative ion beams. A plasma source of ions of one charge polarity includes an accelerator for accelerating the ions toward a target having a plurality of apertures. An electric field directs the ions exiting the apertures against a target surface which is arranged to emit ions of an opposite polarity. The electric field directs the opposite polarity ions away from the target forming a stream of oppositely charged ions.

Abstract: A compact ion source plug connected to a socket is provided. The source uses a magnetic pole piece which includes a center pole piece and a surrounding circumferential pole piece to form an arcuate fringe field. Cathode elements and anode elements are located within the fringe field for producing a plasma. A source body terminates at one end with at least one grid and forms a plasma chamber with a base member. All of the electrical connections to the plasma generator and the gas connection are through a plug formed on the opposite side of the base member.

Abstract: Apparatus is described for neutralizing high intensity ion beams. A technique for neutralizing a positive ion beam from internally plasma produced electrons is provided whereby electrons are added to the positive ion beam by maintaining the voltage between the cathode, anode, and accelerator grid in a predetermined relationship. Other higher energy ion beams are neutralized in another technique by directing the neutralizing beam of charged particles to intersect a sputtering beam.

Abstract: Reactive ion etching of materials is carried out using a low energy ion beam of controlled energy and current density. The ion beam is generated with an ion source using a single extraction grid having multiple apertures to obtain high current densities at low ion energies. A reactive gas such as CF.sub.4 is introduced into the ion source and ionized to form a plasma which acts as the source of ions for the beam. The plasma forms a sheath located adjacent to the single extraction grid such that the ions are extracted from the plasma through the grid apertures and form a low energy ion beam for bombarding the wafers for etching the same. The size of each of the grid apertures is about the same or smaller than the thickness of the plasma sheath adjacent the grid. The ion source is designed to produce an ion current density of about 1 mA/cm.sup.2 at a low ion energy of about 10-100 electron volts.

Abstract: An electron-bombardment ion source has a chamber into which an ionizable propellant is introduced. Electrons flowing from a cathode to an anode serve to ionize the propellant. The resulting ions are accelerated out of the chamber. To increase the efficiency of ionization of the propellant by the electrons, a magnetic field is established within the chamber. To that end, there are a plurality of successively-spaced segments of electrically-conductive magnetic material. The segments are interconnected so as, collectively, to serve as the anode. Individually adjacent ones of the segments are respectively polarized as magnetic opposites, the segments together serving to establish the magnetic field.

Abstract: An electron-bombardment ion source includes a chamber into which a propellant is introduced. The propellant is ionized by means of electrons drawn toward an anode from a cathode. At one end of the chamber is an apertured screen followed by an aligned apertured grid. The grid is maintained at a potential that accelerates the ions out of the chamber through the screen and the grid and past a space-charge-neutralizing cathode. A resistor is connected between the grid and the neutralizing cathode in order to maintain the latter at a positive potential relative to the potential on the grid. A system ground preferably is connected to the junction between the resistor and the neutralizing cathode but, alternatively, may be connected between the grid and the resistor.

Abstract: An ion source includes apparatus that defines a region in which a supply of ions are produced. An apertured grid is disposed at one end of the region. A potential difference is impressed between the grid and the region so as to accelerate ions out of the region through the grid as a plurality of beamlets, the grid serving to focus those beamlets. To cyclically vary the degree of focus of the beamlets, the system as embodied further includes an arrangement for alternating a potential on the grid relative to a potential elsewhere in the ion source and to which the ions are subjected.