Abstract: Disclosed are methods and apparatus for etching a sample, such as a semiconductor device or wafer. In general terms, embodiments of the present invention allow dry etching of a material on a sample, such as a copper material, at room temperature using a reactive substance, such as a chorine based gas. For example, the mechanisms of the present invention allow precise etching of a copper material to produce fine feature patterns without heating up the whole device or substrate to an elevated temperature such as 50° C. and above. The etching is assisted by simultaneously scanning a charged particle beam, such as an electron beam, and a photon beam, such as a laser beam, over a same target area of the sample while the reactive substance is introduced near the same target area. The reactive substance, charged particle beam, and photon beam act in combination to etch the sample at the target area. For example, a copper layer may be etched using the mechanisms of the present invention.

Abstract: An integrated precision machine design system includes an intelligent processing module, a parts database module coupled to the processing module, a training materials database module coupled to the processing module, and program code configured for receiving a user-specified precision machine design specification where the program code is operably coupled to the processing module to compute design system properties using data from the parts database module based on the user-specified precision machine design specification.