Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a memory cell overlying a substrate and comprising a top electrode. A sidewall spacer structure is disposed along sidewalls of the memory cell. The sidewall spacer structure comprises a first spacer layer on the memory cell, a second spacer layer around the first spacer layer, and a third spacer layer around the second spacer layer. The second spacer layer comprises a lateral segment adjacent to a vertical segment. The lateral segment abuts the top electrode and has a top surface aligned with or disposed below a top surface of the top electrode. A first conductive structure overlies the memory cell and contacts the lateral segment and the top electrode.

Abstract: A semiconductor device and methods of fabrication thereof including a substrate, a doped well formed in the substrate, a transistor formed on the substrate, a dielectric material located over the doped well and the transistor and including interconnect structures extending through the dielectric material, the interconnect structures including a first set of interconnect structures electrically coupled to an active region of the transistor and a second set of interconnect structures electrically coupled to the doped well, an active memory cell electrically coupled to the active region of the transistor via the first set of interconnect structures; and a dummy memory cell electrically coupled to the doped well via the second set of conductive interconnect structures. The dummy memory cell and the second set of conductive interconnect structures may provide a low resistance pathway for plasma charge to flow to the doped well, thereby minimizing plasma induced damage to the transistor.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a memory device surrounded by a dielectric structure disposed over a substrate. The memory device includes a data storage structure disposed between a bottom electrode and a top electrode. A bottom electrode via couples the bottom electrode to a lower interconnect. A top electrode via couples the top electrode to an upper interconnect. A bottommost surface of the top electrode via is directly over the top electrode and has a first width that is smaller than a second width of a bottommost surface of the bottom electrode via.

Abstract: A system and method for selectively opening a drivetrain of a vehicle is described. In one example, an electrically operated clutch is opened during selected driving conditions to conserve kinetic energy of the vehicle. The method may reduce fuel consumption during selected conditions.

Abstract: A system and method for selectively opening a drivetrain of a vehicle is described. In one example, an electrically operated clutch is opened during selected driving conditions to conserve kinetic energy of the vehicle. The method may reduce fuel consumption during selected conditions.

Abstract: A system and method for selectively opening a drivetrain of a vehicle is described. In one example, an electrically operated clutch is opened during selected driving conditions to conserve kinetic energy of the vehicle. The method may reduce fuel consumption during selected conditions.

Abstract: A method of operating a vehicle powertrain, includes: sensing a vehicle speed; selecting a plurality of control strategies; activating one of the plurality of control strategies, the control strategy including: (i) operating the vehicle in a stationary start-stop mode when the vehicle speed is below a first threshold; and (ii) operating the vehicle in a rolling stationary start-stop mode when the vehicle speed is above the first threshold but below a second threshold.

Abstract: A system and method for selectively opening a drivetrain of a vehicle is described. In one example, an electrically operated clutch is opened during selected driving conditions to conserve kinetic energy of the vehicle. The method may reduce fuel consumption during selected conditions.