Abstract: This invention is generally related to a method of making a molecule-surface interface comprising at least one surface comprising at least one material and at least one organic group wherein the organic group is adjoined to the surface and the method comprises contacting at least one organic group precursor with at least one surface wherein the organic group precursor is capable of reacting with the surface in a manner sufficient to adjoin the organic group and the surface. The present invention is directed to hybrid molecular electronic devices having a molecule-surface interface. Such hybrid molecular electronic devices may advantageously have either a top or bottom gate electrode for modifying a conductivity of the devices.

Abstract: A hybrid molecular electronic device having switching, memory, and sensor application is disclosed. In one embodiment, the device resembles a conventional field-effect transistor (FET) formed on a silicon-on-insulator (SOI) substrate. Source and drain doped regions are formed in an upper surface of the SOI substrate, and a metallization layer which can serve as a gate contact is formed on a lower surface of the SOI substrate. A channel region spanning between the doped source and drain regions is left exposed, in order that a monolayer of molecules may be formed therein. Upon application of appropriate gating voltages to the gate contact, conduction between the source and drain regions can be modulated, possibly as a result of the reduction and oxidation of the molecules grafted to the gate region.

Abstract: The present invention relates to a method of making a nanoscale electronic device wherein said device comprises a gap between about 0.1 nm and about 100 nm between at least two conductors, semiconductors or the combination thereof. The method features complete assembly of electrical contacts before addition of a molecular component thereby preserving the integrity of the molecular electronic component and maintaining a well-formed gap. The gap produced is within the nanoscale regime, has uniform width and is further characterized by surfaces that are uniformly smooth.

Abstract: The present invention relates to a method of making a nanoscale electronic device wherein said device comprises a gap between about 0.1 nm and about 100 nm between at least two conductors, semiconductors or the combination thereof. The method features complete assembly of electrical contacts before addition of a molecular component thereby preserving the integrity of the molecular electronic component and maintaining a well-formed gap. The gap produced is within the nanoscale regime, has uniform width and is further characterized by surfaces that are uniformly smooth.

Abstract: A T-shaped trench intersection shaped to make uniform the wall-to-wall spacing at the trench intersection and prevent the formation of voids when the trench is filled with a conformal insulating material.

Abstract: A method of making a bipolar transistor in an LSI or VLSI process which includes forming a buried DUF collector of a first conductivity type, growing an epitaxial layer of a first conductivity type over said DUF collector and forming isolation means around a transistor region. The transistor region includes a trench which at least partially encloses the transistor region and extends through the DUF collector. Emitter and base regions of the first and second conductivity types, respectively, are formed in the epitaxial layer. A collector contact region of the first conductivity is formed in the epitaxial layer and extends down to the buried DUF collector.