Abstract: A structure is described having a plurality of electronic devices with the same or different internal CMOS voltages; an interconnection between two or more of the electronic devices; driver and receiver circuits which provide selectable input/output voltage levels for interfacing with several generations of CMOS technology, thus allowing chips fabricated in such technologies to communicate using a signal voltage range most suitable for each chip; Circuitry for selecting or adjusting the type of receiver circuit used, thus allowing either the use of a differential comparator circuit with an externally supplied reference voltage, or alternatively, the use of an inverter style receiver with an adjustable threshold, the selection being accomplished by setting the external reference to a predetermined voltage; Circuitry for selecting or adjusting the switching threshold of the inverter receiver circuit, which enables the threshold to be set appropriately for a given input signal voltage range.

Abstract: An electronic apparatus is disclosed having: a plurality of electronic devices with the same or different internal voltages; an interconnection between two or more of the plurality of electronic devices; each of said two or more electronic devices has an internal voltage; driver and receiver circuits which send and receive signals at a selectable communication voltage levels for interfacing between said two or more electronic devices, at a common communication voltage which is less than the highest value of said internal voltages of said two or more electronic devices; a circuit for configuring the driver and receiver circuits; and the driver circuit are configured to have a substantially constant output impedance independent of their output voltage.

Abstract: A method and apparatus are provided which are implemented in a chip I/O buffer-multiplexor circuit or I/O buffer cell 201. The I/O buffer portion includes a receiver circuit 205 for receiving bus input signals to the buffered chip, and a driver circuit 203 for driving output signals from the buffered chip to a data bus. An integrated multiplexor or MUX circuit 207 selectively gates one of three possible signals to chip internal logic. The three signals applied to the MUX circuit include a boundary scan test signal BS MUX for testing scan points in an integrated circuit, a bypass Data In signal DI which is generated by chip internal drive logic, and a DQ signal received by the I/O buffer receiver circuit from a data bus. The data input node of the I/O buffer is wired directly to the new multiplexor data input. Additional control signals are provided for orthogonal selection of the three multiplexor data inputs.

Abstract: A structure including a halogenated polymeric-containing layer. At least a portion of a surface of the halogenated polymeric-containing layer is electrochemically reduced. An electrically conductive pattern is provided over at least a portion of the electrochemically reduced portion of the halogenated polymeric-containing layer.

Abstract: A halogenated polymeric material is exposed to a reducing agent and/or an electrolyte and applied voltage to render exposed portions capable of being metallized and of being etched. The exposed portions can also be doped to thereby induce electrical conductivity therein. Also, new structures containing a free standing halogenated polymeric-containing layer and electrical conductive pattern thereon are provided.

Abstract: A halogenated polymeric material is exposed to a reducing agent and/or an electrolyte and applied voltage to render exposed portions capable of being metallized and of being etched. The exposed portions can also be doped to thereby induce electrical conductivity therein. Also, new structures containing a free standing halogenated polymeric-containing layer and electrical conductive pattern thereon are provided.

Abstract: A method of treating a halogenated polymeric-containing substrate including exposing at least portions of the halogenated polymeric-containing substrate to a composition containing a reducing agent and an aprotic solvent selected from the group consisting of nitriles, nitro compounds, amides, esters, carbonates, oxides, sulfo compounds and mixtures thereof. The solvent is free of ethers, amines, ammonia. The composition is prepared by reacting a metal with an organic compound selected from the group consisting of polyaryl compounds, aromatic carbonyl containing compounds, aromatic nitriles, and aromatic heterocyclic nitrogen containing compounds in a reaction solvent that does not react with the metal but permits reaction between the metal and the organic compound to thereby provide the reducing agent. The reducing agent is isolated from the reaction solvent to obtain a reaction product as a solid. The reaction product is added to the aprotic solvent.