Abstract: Provided are methods and systems for imprinting a pattern formed on surfaces of an imprint mask onto a double-sided substrate. The method includes deforming the surfaces of the first and second imprint stamps to produce respective first and second deformed surfaces, each having an arc therein. A pressure is applied to bring the deformed first and second surfaces into intimate contact with the first and second substrate surfaces, respectively. The applied pressure substantially flattens the deformed surfaces. To separate the two surfaces, the applied pressure is released. The method also includes transporting a substrate having first and second patterning surfaces and a shaped edge using a carrier having a holding portion that holds the shaped edge of the substrate, the holding surface having a shape that is complementary to the shaped edge of the substrate, such that the patterning surfaces remain untouched by the carrier.

Abstract: A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.

Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The day may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).

Abstract: A system and method are provided for writing patterns onto substrates. First and second beams of extreme ultraviolet (EUV) radiation are produced. An exposure unit is used to project the first and second beams of EUV radiation onto a substrate. The first and second beams of radiation interfere with each other to expose a first set of parallel lines at an exposure field of the substrate.

Abstract: A system and method to allow organic fluids to be used in immersion lithographic systems. This is done by providing a showerhead portion of a liquid supply system that is partially coated or made from a TEFLON like material. The TEFLON like material reduces wetness effect, and thus increases containment, when using an organic immersion fluid in a space between the last optic and the substrate.

Abstract: A fluid handling device for an immersion lithographic apparatus, the fluid handling device comprising: at least one body with a surface facing a space for fluid; a plurality of openings for the flow of fluid therethrough defined in the surface; at least one barrier moveable relative to the plurality of openings for selectively allowing or preventing the flow of fluid through selected openings of the plurality of openings.

Abstract: A system and method to allow organic fluids to be used in immersion lithographic systems. This is done by providing a showerhead portion of a liquid supply system that is partially coated or made from a TEFLON like material. The TEFLON like material reduces wetness effect, and thus increases containment, when using an organic immersion fluid in a space between the last optic and the substrate.

Abstract: A lithographic projection apparatus includes an illumination system, an interchangeable upper optics module, and a lower optics module. The illumination system provides a beam of radiation. The interchangeable upper optics module receives the beam and includes, sequentially, a beam splitter that splits the beam into portions, an aperture plate, and a plurality of reflecting surfaces. The lower optics module receives portions of the beam from respective ones the reflecting surfaces and directs the portions of the beam onto a substrate. Interference fringes or contact hole patterns are formed on the substrate using the portions of the beam.

Abstract: A system for inspecting an extreme ultra violet (EUV) mask. The system includes an array of sensors and an optical system. The array of sensors is configured to produce analog data corresponding to received optical energy. The optical system is configured to direct EUV light from an inspection area of an EUV patterning device onto the array of sensors, whereby the analog data is used to determine defects or to compensate for irregularities found on the EUV mask.

Abstract: Disclosed are apparatuses, methods, and lithographic systems for EUV mask inspection. An EUV mask inspection system can include an EUV illumination source, an optical system, and an image sensor. The EUV illumination source can be a standalone illumination system or integrated into the lithographic system, where the EUV illumination source can be configured to illuminate an EUV radiation beam onto a target portion of a mask. The optical system can be configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the mask. Further, the image sensor can be configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. The EUV mask inspection system can also include a data analysis device configured to analyze the aerial image for mask defects.

Abstract: A device manufacturing system and method are used to perform multiple exposures utilizing a resettable or reversible contrast enhancing layer. A radiation sensitive layer is formed on a substrate. A resettable or reversible contrast enhancing layer is formed on the radiation sensitive layer. The resettable or reversible contrast enhancing layer is bleached with a first pattern. The first pattern formed in the resettable or reversible contrast enhancing layer is transferred to the radiation sensitive layer. The resettable or reversible contrast enhancing layer is reset to unbleach the resettable or reversible contrast enhancing layer. The resettable or reversible contrast enhancing layer is bleached with a second pattern. The second pattern formed in the resettable or reversible contrast enhancing layer is transferred to the radiation sensitive layer.

Abstract: A system and method form a nanodisk that can be used to form isolated data bits on a memory disk. The imprint stamp is formed from first and second overlapping patterns, where the patterns are selectively etched. The selective etching leaves either pits or posts on the imprint stamp. The pits or posts are imprinted on the memory disk, leaving either pits or posts on the memory disk. The pits or posts on the memory disk are processed to form relatively small and dense isolated data bits. Instability of the isolated data bits caused by outside magnetic and thermal influences is substantially eliminated.

Abstract: A lithographic apparatus is presented. The lithographic apparatus includes a beam splitter configured to split a radiation beam into a plurality of radiation beams; a substrate stage configured to support a substrate; a beam combiner adapted to redirect and combine at least a portion of the plurality of radiation beams to form an interference pattern on the substrate; and a control unit in communication with the substrate stage and a radiation source configured to output the beam of radiation, the control unit configured to synchronize a motion of the substrate stage with a repetition rate at which the beam of radiation is output by the radiation source.

Abstract: A liquid immersion lithography system includes projection optics (PL) and a showerhead (604). The projection optics are configured to expose a substrate (W) with a patterned beam. The showerhead includes a first nozzle (610) and a second nozzle (612) that are configured to be at different distances from a surface of the substrate during an exposure operation.

Abstract: A system and method are provided for writing a pattern onto a substrate. A patterned beam of radiation is produced using a reticle and projected onto a substrate to expose the pattern. Reticle and substrate speeds are controlled such that respective scanning speeds of the reticle and the substrate allow the pattern to be exposed across an entire width of the substrate in the scanning direction, which provides a substantial increase in wafer throughput.

Abstract: A lithographic apparatus and method for simultaneously exposing two patterning devices onto a substrate is disclosed. In an embodiment, a lithographic apparatus includes a plurality of illumination systems for receiving and conditioning a pulsed radiation beam, a beam director arranged between a source of the pulsed radiation and the illumination systems for alternately directing pulses of the radiation beam to the respective illumination systems, a support table for holding a plurality of patterning devices, each of the patterning devices being capable of imparting a respective conditioned radiation beam with a pattern in its cross-section to form a plurality of patterned radiation beams, and a projection system configured to project each of the plurality of patterned radiation beams coincidentally onto a target portion of a substrate. In an embodiment, the substrate is covered with a phase change material.

Abstract: A system is disclosed to isolate an environmental chamber of an immersion lithographic apparatus, to which an immersion fluid comprising liquid, is provided from an external environment. Further, there is disclosed a system for measuring flow rate and/or vapor concentration of a gas using a transducer to send and/or receive an acoustic signal.

Abstract: An immersion lithographic apparatus is disclosed having a projection system, a liquid supply system, and a recycling system. The projection system is configured to project a patterned radiation beam onto a target portion of a substrate, wherein a substrate table is configured to support the substrate. The liquid supply system is configured to provide an immersion liquid to a space between the projection system and the substrate or the substrate table. The recycling system is configured to collect the immersion liquid from the liquid supply system and to supply the immersion liquid to the liquid supply system. The recycling system includes a fiber configured to remove organic contaminants from the immersion liquid.

Abstract: A lithographic apparatus includes a projection system, a fluid handling structure, a metrology device, and a recycling control device. The projection system is configured to project a patterned radiation beam onto a target portion of a substrate, the substrate being supported on a substrate table. The fluid handling structure is configured to provide an immersion fluid to a space between the projection system and the substrate and/or substrate table. The metrology device is configured to monitor a parameter of the immersion fluid. The recycling control device regulates a routing of the immersion fluid either to be reused by the fluid handling structure or to be reconditioned based on the quality of immersion fluid indicated by the metrology device.

Abstract: A system and method are provided for writing patterns onto substrates. First and second beams are directed to converge and substantially overlap in a common region on a substrate. This can be done so that the first and second beams are mutually temporally coherent and spatially coherent in the region of overlap to form interference fringes to define a writing image. A beam width of the first and second beams is adjusted. This can be done so that respective path lengths of the beams are matched when they reach the common region to ensure the first and second beams are mutually spatially coherent and temporally coherent across an entire width of the common region. In one example, the substrate is moved with respect to the writing image, while writing patterns onto the substrate. In another example, the substrate remains stationary.