Abstract: A surgical instrument includes a chassis, an outer tube having a proximal end operably coupled to the chassis, and an inner tube extending within the outer tube. The inner tube has a proximal end operably coupled to the chassis to allow slidable movement of the inner tube relative to the outer tube in response to a force imparted to a distal end of the inner tube, and such that frictional force imparted to an outer surface of the outer tube is not imparted to the inner member.

Abstract: A medical device includes a mechanical structure and a force sensor unit. The force sensor unit comprises a mounting bracket, a first rod, a second rod, a first magnet, a second magnet, a first coil coupled to the mounting bracket, and a second coil coupled to the mounting bracket. The first rod and the second rod each have a center axis defined between a proximal and distal portion of the respective first and second rods. The center axis of the second rod is noncoaxial with the center axis of the first rod. The first magnet is coupled to the first rod and translates within the first coil along the center axis of the first rod. Similarly, the second magnet is coupled to the second rod and translates within the second coil along the center axis of the second rod.

Abstract: A medical device comprises an end effector, a mechanical structure, a connector, and a force sensor unit. The connector extends from a drive component of the mechanical structure to the end effector. Motion of the drive component produces a tension force within the connector, which is associated with an end effector torque or force exerted by the end effector. The force sensor unit comprises a body, and the body is coupled in-line with the connector so that strain in the connector is imparted to the body. A strain sensor measures the strain on the body as an indication of strain in the connector, which is an indication of torque or force at the end effector. The connector may be continuous, and coupled to the body with a slack relief portion of the connector within the body. Alternatively, the connector may be discontinuous and coupled to opposite ends of the body.

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

Abstract: The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

Abstract: The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.