Abstract: The present invention provides optimized driving of an inverter device. The inverter of such an inverter device may alternatively be driven in two-level operation or in three-level operation. Through a suitable selection of the driving method, the semiconductor losses in the inverter may be minimized and the thermal loading of the components used may be controlled in a targeted manner. Using the provided operating method for an inverter, more efficient and more protective inverter operation is possible, even at low output voltages and highly inductive or capacitive loading.