Abstract: A light emitting element includes: a semiconductor structure including an n-side layer, a p-side layer, and an active layer, each being made of a nitride semiconductor, wherein the active layer is positioned between the n-side layer and the p-side layer and is configured to emit ultraviolet light; an n-electrode electrically connected to the n-side layer; and a p-electrode comprising a first metal layer in contact with the p-side layer and electrically connected to the p-side layer. The p-side layer comprises a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer, each containing a p-type impurity. A surface of the second layer includes an exposed region that is exposed from the third layer. The first layer and the second layer contain Al.

Abstract: A method for manufacturing a semiconductor element includes: providing a wafer comprising first and second regions at an upper surface of the wafer, the second region being located at a periphery of the first region and being at a lower position than the first region; and forming a semiconductor layer made of a nitride semiconductor at the upper surface of the wafer. In a top-view, the first region comprises an extension portion at an end portion of the first region in a first direction that passes through the center of the wafer parallel to an m-axis of the semiconductor layer, the extension portion extending in a direction from a center of the wafer toward an edge of the wafer or in a direction from an edge of the wafer toward a center of the wafer.

Abstract: A method of manufacturing semiconductor elements includes: disposing a semiconductor layer made of a nitride semiconductor on a first wafer; and bonding a second wafer to the first wafer via the semiconductor layer. The first wafer has an upper surface including a first region and a second region surrounding a periphery of the first region and located lower than the first region. In a top view of the first wafer, a first distance between an edge of the first wafer and the first region of the first wafer in each of a plurality of first directions parallel to respective m-axes of the semiconductor layer is smaller than a second distance between the edge of the first wafer and the first region of the first wafer in each of a plurality of second directions parallel to respective a-axes of the semiconductor layer.

Abstract: A method for manufacturing a semiconductor element includes: providing a wafer comprising first and second regions at an upper surface of the wafer, the second region being located at a periphery of the first region and being at a lower position than the first region; and forming a semiconductor layer made of a nitride semiconductor at the upper surface of the wafer. In a top-view, the first region comprises an extension portion at an end portion of the first region in a first direction that passes through the center of the wafer parallel to an m-axis of the semiconductor layer, the extension portion extending in a direction from a center of the wafer toward an edge of the wafer or in a direction from an edge of the wafer toward a center of the wafer.

Abstract: A method of manufacturing semiconductor elements includes: disposing a semiconductor layer made of a nitride semiconductor on a first wafer; and bonding a second wafer to the first wafer via the semiconductor layer. The first wafer has an upper surface including a first region and a second region surrounding a periphery of the first region and located lower than the first region. In a top view of the first wafer, a first distance between an edge of the first wafer and the first region of the first wafer in each of a plurality of first directions parallel to respective m-axes of the semiconductor layer is smaller than a second distance between the edge of the first wafer and the first region of the first wafer in each of a plurality of second directions parallel to respective a-axes of the semiconductor layer.

Abstract: A pressure sensor 1 comprises a semiconductor substrate 10, insulating layers 21, 22, 23 formed on the semiconductor substrate 10, a semiconductor layer 30 formed on the semiconductor substrate 10 with the insulating layers 21, 23 intervening therebetween, and a cavity portion 13 provided between the semiconductor substrate 10 and the semiconductor layer 30. The portion of the semiconductor layer 30 which overlaps the cavity portion 13 as viewed in a lamination direction serves as a movable portion 31. The cavity portion 13 is surrounded by the insulating layers 22, 23. With this arrangement, the pressure sensor 1 can be manufactured easily with high precision.

Abstract: To provide a semiconductor device prevented from giving a limitation on the sensitivity of HEMS devices due to isolation regions thereof and a method of fabricating the same.

Abstract: There are disclosed a semiconductor device in which a short circuit between an oscillator and a semiconductor substrate is prevented, the semiconductor device being capable of suppressing an increase of fabrication steps, and a method of fabricating the semiconductor device. The semiconductor device includes: a semiconductor substrate, in which a recessed portion is formed on an upper surface, and a semiconductor layer is exposed to a bottom surface of the recessed portion; an oscillator that has a beam-type movable electrode arranged in the recessed portion, the movable electrode having insulating films arranged on side surfaces and lower surface thereof, and is fixed to the semiconductor substrate at a position apart from the movable electrode; and a beam-type fixed electrode that is arranged in the recessed portion so as to be opposed to the movable electrode, and is fixed to the semiconductor substrate so as to be electrically isolated from the movable electrode.

Abstract: A pressure sensor 1 comprises a semiconductor substrate 10, insulating layers 21, 22, 23 formed on the semiconductor substrate 10, a semiconductor layer 30 formed on the semiconductor substrate 10 with the insulating layers 21, 23 intervening therebetween, and a cavity portion 13 provided between the semiconductor substrate 10 and the semiconductor layer 30. The portion of the semiconductor layer 30 which overlaps the cavity portion 13 as viewed in a lamination direction serves as a movable portion 31. The cavity portion 13 is surrounded by the insulating layers 22, 23. With this arrangement, the pressure sensor 1 can be manufactured easily with high precision.

Abstract: To provide a semiconductor device prevented from giving a limitation on the sensitivity of HEMS devices due to isolation regions thereof and a method of fabricating the same.

Abstract: There are disclosed a semiconductor device in which a short circuit between an oscillator and a semiconductor substrate is prevented, the semiconductor device being capable of suppressing an increase of fabrication steps, and a method of fabricating the semiconductor device. The semiconductor device includes: a semiconductor substrate, in which a recessed portion is formed on an upper surface, and a semiconductor layer is exposed to a bottom surface of the recessed portion; an oscillator that has a beam-type movable electrode arranged in the recessed portion, the movable electrode having insulating films arranged on side surfaces and lower surface thereof, and is fixed to the semiconductor substrate at a position apart from the movable electrode; and a beam-type fixed electrode that is arranged in the recessed portion so as to be opposed to the movable electrode, and is fixed to the semiconductor substrate so as to be electrically isolated from the movable electrode.

Abstract: A MEMS device capable of detecting external force with high sensitivity is disclosed.