Patents by Inventor Haruhiko Udono

Haruhiko Udono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor material, infrared light receiving element and method for producing semiconductor material
    Patent number: 11935974
    Abstract: Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula: Mg2Sn·Zna??Composition formula: in which, a is a Zn content of from 0.05 to 1 at % relative to Mg2Sn.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: March 19, 2024
    Assignees: IBARAKI UNIVERSITY, JX METALS CORPORATION
    Inventors: Haruhiko Udono, Toshiaki Asahi
  • Mg2Si SINGLE CRYSTAL, Mg2Si SINGLE CRYSTAL SUBSTRATE, INFRARED LIGHT RECEIVING ELEMENT AND METHOD FOR PRODUCING Mg2Si SINGLE CRYSTAL
    Publication number: 20220341057
    Abstract: Provided is a Mg2Si single crystal in which generation of low-angle grain boundaries in the crystal is satisfactorily suppressed. A Mg2Si single crystal, wherein a variation in crystal orientation as measured by XRD is in a range of ±0.020°.
    Type: Application
    Filed: February 25, 2021
    Publication date: October 27, 2022
    Applicants: Ibaraki University, JX Nippon Mining & Metals Corporation
    Inventor: Haruhiko UDONO
  • SEMICONDUCTOR MATERIAL, INFRARED LIGHT RECEIVING ELEMENT AND METHOD FOR PRODUCING SEMICONDUCTOR MATERIAL
    Publication number: 20220013675
    Abstract: Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula: Mg2Sn.Zna??Composition formula: in which, a is a Zn content of from 0.05 to 1 at % relative to Mg2Sn.
    Type: Application
    Filed: May 23, 2019
    Publication date: January 13, 2022
    Applicants: Ibaraki University, JX Nippon Mining & Metals Corporation
    Inventors: Haruhiko UDONO, Toshiaki ASAHI
  • Photodiode and photosensitive device
    Patent number: 11011664
    Abstract: Provided is a semiconductor photodiode which has an electrode structure having not only high adhesion to a Mg2Si material but also improved overall performance including photosensitivity. A photodiode comprising: a pn junction of a magnesium silicide crystal; an electrode comprising a material that is in contact with p-type magnesium silicide; and an electrode comprising a material that is in contact with n-type magnesium silicide, wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and reacts with silicon to form a silicide or form an alloy with magnesium.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: May 18, 2021
    Assignees: IBARAKI UNIVERSITY, JX NIPPON MINING & METALS CORPORATION
    Inventors: Haruhiko Udono, Toshiaki Asahi
  • PHOTODIODE AND PHOTOSENSITIVE DEVICE
    Publication number: 20200052142
    Abstract: Provided is a semiconductor photodiode which has an electrode structure having not only high adhesion to a Mg2Si material but also improved overall performance including photosensitivity. A photodiode comprising: a pn junction of a magnesium silicide crystal; an electrode comprising a material that is in contact with p-type magnesium silicide; and an electrode comprising a material that is in contact with n-type magnesium silicide, wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and reacts with silicon to form a silicide or form an alloy with magnesium.
    Type: Application
    Filed: September 20, 2018
    Publication date: February 13, 2020
    Applicants: IBARAKI UNIVERSITY, JX NIPPON MINING & METALS CORPORATION
    Inventors: Haruhiko UDONO, Toshiaki ASAHI
  • Apparatus and method for producing Mg(2)Si(1-x)Sn(x) polycrystal
    Patent number: 9181607
    Abstract: Provided are an apparatus and a method for producing an inexpensive Mg2Si1-xSnx polycrystal that can be effectively used as thermoelectric conversion materials that can be expected to have a high performance index by doping if necessary.
    Type: Grant
    Filed: March 16, 2011
    Date of Patent: November 10, 2015
    Assignees: IBARAKI UNIVERSITY, SHOWA KDE CO., LTD.
    Inventors: Haruhiko Udono, Yohiko Mito
  • APPARATUS AND METHOD FOR PRODUCING MG(2)Si(1-x)SN(x) POLYCRYSTAL
    Publication number: 20130199337
    Abstract: Provided are an apparatus and a method for producing an inexpensive Mg2Si1-xSnx polycrystal that can be effectively used as thermoelectric conversion materials that can be expected to have a high performance index by doping if necessary.
    Type: Application
    Filed: March 16, 2011
    Publication date: August 8, 2013
    Inventors: Haruhiko Udono, Yohiko Mito