Patents by Inventor Haruhiro Harry Goto
Haruhiro Harry Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9941108Abstract: Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.Type: GrantFiled: February 3, 2014Date of Patent: April 10, 2018Assignee: Novellus Systems, Inc.Inventors: Haruhiro Harry Goto, David Cheung
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Patent number: 9373497Abstract: Methods are provided for cleaning metal regions overlying semiconductor substrates. A method for removing material from a metal region comprises heating the metal region, forming a plasma from a gas comprising hydrogen and carbon dioxide, and exposing the metal region to the plasma.Type: GrantFiled: February 5, 2013Date of Patent: June 21, 2016Assignee: Novellus Systems, Inc.Inventors: David Chen, Haruhiro Harry Goto, Martina Su, Frank Greer, Shamsuddin Alokozai
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Publication number: 20140182619Abstract: Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.Type: ApplicationFiled: February 3, 2014Publication date: July 3, 2014Applicant: Novellus Systems, Inc.Inventors: Haruhiro Harry Goto, David Cheung
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Patent number: 8641862Abstract: Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.Type: GrantFiled: May 2, 2012Date of Patent: February 4, 2014Assignee: Novellus Systems, Inc.Inventors: Haruhiro Harry Goto, David Cheung
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Publication number: 20130157465Abstract: Methods are provided for cleaning metal regions overlying semiconductor substrates. A method for removing material from a metal region comprises heating the metal region, forming a plasma from a gas comprising hydrogen and carbon dioxide, and exposing the metal region to the plasma.Type: ApplicationFiled: February 5, 2013Publication date: June 20, 2013Inventors: David Chen, Haruhiro Harry Goto, Martina Martina, Frank Greer, Shamsuddin Alokozai
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Patent number: 8444869Abstract: A method and apparatus for cleaning a wafer. The wafer is heated and moved to a processing station within the apparatus that has a platen either permanently in a platen down position or is transferable from a platen up position to the platen down position. The wafer is positioned over the platen so as not to contact the platen and provide a gap between the platen and wafer. The gap may be generated by positioning the platen in a platen down position. A plasma flows into the gap to enable the simultaneous removal of material from the wafer front side, backside and edges. The apparatus may include a single processing station having the gap residing therein, or the apparatus may include a plurality of processing stations, each capable of forming the gap therein for simultaneously removing additional material from the wafer front side, backside and edges.Type: GrantFiled: May 24, 2010Date of Patent: May 21, 2013Assignee: Novellus Systems, Inc.Inventors: Haruhiro Harry Goto, David Cheung
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Patent number: 8435895Abstract: Methods are provided for cleaning metal regions overlying semiconductor substrates. A method for removing material from a metal region comprises heating the metal region, forming a plasma from a gas comprising hydrogen and carbon dioxide, and exposing the metal region to the plasma.Type: GrantFiled: April 4, 2007Date of Patent: May 7, 2013Assignee: Novellus Systems, Inc.Inventors: David Chen, Haruhiro Harry Goto, Martina Martina, Frank Greer, Shamsuddin Alokozai
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Publication number: 20120211473Abstract: Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.Type: ApplicationFiled: May 2, 2012Publication date: August 23, 2012Inventors: Haruhiro Harry Goto, David Cheung
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Patent number: 8193096Abstract: Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.Type: GrantFiled: October 14, 2008Date of Patent: June 5, 2012Assignee: Novellus Systems, Inc.Inventors: Haruhiro Harry Goto, David Cheung
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Patent number: 8058178Abstract: The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer. Methods involve implementing a plasma operation using hydrogen and a weak oxidizing agent, such as carbon dioxide. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.Type: GrantFiled: July 31, 2009Date of Patent: November 15, 2011Assignee: Novellus Systems, Inc.Inventors: Haruhiro Harry Goto, Ilia Kalinovski, Khalid Mohamed
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Patent number: 7585777Abstract: The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer. Methods involve implementing a plasma operation using hydrogen and a weak oxidizing agent, such as carbon dioxide. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.Type: GrantFiled: September 21, 2007Date of Patent: September 8, 2009Assignee: Novellus Systems, Inc.Inventors: Haruhiro Harry Goto, Ilia Kalinovski, Khalid Mohamed
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Publication number: 20090056875Abstract: The present invention pertains to methods for removing unwanted material from a work piece. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer during semiconductor manufacturing. Methods involve implementing a hydrogen plasma operation with downstream mixing with an inert gas. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.Type: ApplicationFiled: February 27, 2007Publication date: March 5, 2009Inventors: Haruhiro Harry Goto, David Cheung, Prabhat Kumar Sinha
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Publication number: 20090053901Abstract: Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.Type: ApplicationFiled: October 14, 2008Publication date: February 26, 2009Applicant: Novellus Systems Inc.Inventors: Haruhiro Harry Goto, David Cheung
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Publication number: 20080248656Abstract: Methods are provided for cleaning metal regions overlying semiconductor substrates. A method for removing material from a metal region comprises heating the metal region, forming a plasma from a gas comprising hydrogen and carbon dioxide, and exposing the metal region to the plasma.Type: ApplicationFiled: April 4, 2007Publication date: October 9, 2008Applicant: NOVELLUS SYSTEMS, INC.Inventors: David Chen, Haruhiro Harry Goto, Martina Martina, Frank Greer, Shamsuddin Alokozai
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Publication number: 20080216958Abstract: Plasma reaction apparatus having pre-seasoned showerheads and methods for pre-seasoning a showerhead of a plasma reaction apparatus are provided. In an embodiment, a method for seasoning a showerhead prior to installation in a plasma reaction apparatus comprises cleaning the showerhead, positioning the showerhead in a deposition chamber, and forming a continuous, substantially uniform protective layer on the showerhead.Type: ApplicationFiled: March 7, 2007Publication date: September 11, 2008Applicant: NOVELLUS SYSTEMS, INC.Inventors: Haruhiro Harry GOTO, James A. FAIR, David CHEUNG
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Publication number: 20080102644Abstract: Methods for removing photoresist from a semiconductor substrate are provided. In accordance with an exemplary embodiment of the invention, a method for removing a photoresist from a semiconductor substrate comprises the steps of exposing the semiconductor substrate and the photoresist to a first plasma formed from oxygen, forming an oxide layer on exposed regions of the semiconductor substrate, and subjecting the photoresist to a second plasma formed from oxygen and a fluorine-comprising gas, wherein the first plasma is not the second plasma.Type: ApplicationFiled: October 31, 2006Publication date: May 1, 2008Applicant: NOVELLUS SYSTEMS, INC.Inventors: Haruhiro Harry GOTO, Weijie ZHANG, David CHEUNG
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Patent number: 7288484Abstract: The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer. Methods involve implementing a plasma operation using hydrogen and a weak oxidizing agent, such as carbon dioxide. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.Type: GrantFiled: July 13, 2004Date of Patent: October 30, 2007Assignee: Novellus Systems, Inc.Inventors: Haruhiro Harry Goto, Ilia Kalinovski, Khalid Mohamed
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Patent number: 7202176Abstract: The present invention pertains to methods for removing unwanted material from a work piece. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer during semiconductor manufacturing. Methods involve implementing a hydrogen plasma operation with downstream mixing with an inert gas. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.Type: GrantFiled: December 13, 2004Date of Patent: April 10, 2007Assignee: Novellus Systems, Inc.Inventors: Haruhiro Harry Goto, David Cheung, Prabhat Kumar Sinha
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Patent number: 6880561Abstract: A process for removing residue from the interior of a semiconductor process chamber using molecular fluorine gas (F2) as the principal precursor reagent. In one embodiment a portion of the molecular fluorine is decomposed in a plasma to produce atomic fluorine, and the resulting mixture of atomic fluorine and molecular fluorine is supplied to the chamber whose interior is to be cleaned. In another embodiment the molecular fluorine gas cleans the semiconductor process chamber without any plasma excitation. Molecular fluorine gas has the advantage of not being a global warming gas, unlike fluorine-containing gas compounds conventionally used for chamber cleaning such as NF3, C2F6 and SF6.Type: GrantFiled: May 5, 2003Date of Patent: April 19, 2005Assignee: Applied Materials, Inc.Inventors: Haruhiro Harry Goto, William R. Harshbarger, Quanyuan Shang, Kam S. Law
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Publication number: 20030192569Abstract: A process for removing residue from the interior of a semiconductor process chamber using molecular fluorine gas (F2) as the principal precursor reagent. In one embodiment a portion of the molecular fluorine is decomposed in a plasma to produce atomic fluorine, and the resulting mixture of atomic fluorine and molecular fluorine is supplied to the chamber whose interior is to be cleaned. In another embodiment the molecular fluorine gas cleans the semiconductor process chamber without any plasma excitation. Molecular fluorine gas has the advantage of not being a global warming gas, unlike fluorine-containing gas compounds conventionally used for chamber cleaning such as NF3, C2F6 and SF6.Type: ApplicationFiled: May 5, 2003Publication date: October 16, 2003Applicant: Applied Materials, Inc.Inventors: Haruhiro Harry Goto, William R. Harshbarger, Quanyuan Shang, Kam S. Law