Patents by Inventor Haruhisa Yokoyama

Haruhisa Yokoyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid-state imaging device
    Patent number: 8395194
    Abstract: A solid-state imaging device according to the present invention is of a MOS type and includes a plurality of pixels arranged in rows and columns, and includes: a semiconductor substrate; a photodiode which is formed in the semiconductor substrate and converts, into a signal charge, light that is incident from a first main surface of the semiconductor substrate; a transfer transistor which is formed in a second main surface of the semiconductor substrate and transfers the signal charge converted by the photodiode; a light shielding film which is conductive and formed on a boundary between the pixels, above the first main surface of the semiconductor substrate; an overflow drain region electrically connected to the light shielding film and formed in the first main surface of the semiconductor substrate; and an overflow barrier region formed between the overflow drain region and the photodiode.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: March 12, 2013
    Assignee: Panasonic Corporation
    Inventors: Haruhisa Yokoyama, Hiroshi Sakoh, Kazuhiro Yamashita, Mitsuo Yasuhira, Yuichi Hirofuji
  • SOLID-STATE IMAGING DEVICE
    Publication number: 20120037960
    Abstract: A solid-state imaging device according to the present invention is of a MOS type and includes a plurality of pixels arranged in rows and columns, and includes: a semiconductor substrate; a photodiode which is formed in the semiconductor substrate and converts, into a signal charge, light that is incident from a first main surface of the semiconductor substrate; a transfer transistor which is formed in a second main surface of the semiconductor substrate and transfers the signal charge converted by the photodiode; a light shielding film which is conductive and formed on a boundary between the pixels, above the first main surface of the semiconductor substrate; an overflow drain region electrically connected to the light shielding film and formed in the first main surface of the semiconductor substrate; and an overflow barrier region formed between the overflow drain region and the photodiode.
    Type: Application
    Filed: September 21, 2011
    Publication date: February 16, 2012
    Applicant: PANASONIC CORPORATION
    Inventors: Haruhisa YOKOYAMA, Hiroshi SAKOH, Kazuhiro YAMASHITA, Mitsuo YASUHIRA, Yuichi HIROFUJI