Abstract: Provided are an organic EL display device and a method of manufacturing the organic EL display device for preventing damage caused in a process of exposing terminals and for improving light extraction from the display. A glass substrate is removed from a panel that is formed by sequentially laminating a TFT substrate, a sealing film, a flexible substrate layer, and the glass substrate. A portion of the flexible substrate layer is removed that is formed on a position corresponding to a terminal part of the TFT substrate. A transparent thin film is formed on the flexible substrate layer, and a portion of the sealing film is removed by using the transparent thin film as a mask. The portion of the sealing film is formed on the position corresponding to the terminal part of the TFT substrate.

Abstract: Provided are an organic EL display device and a method of manufacturing the organic EL display device for preventing damage caused in a process of exposing terminals and for improving light extraction from the display. A glass substrate is removed from a panel that is formed by sequentially laminating a TFT substrate, a sealing film, a flexible substrate layer, and the glass substrate. A portion of the flexible substrate layer is removed that is formed on a position corresponding to a terminal part of the TFT substrate. A transparent thin film is formed on the flexible substrate layer, and a portion of the sealing film is removed by using the transparent thin film as a mask. The portion of the sealing film is formed on the position corresponding to the terminal part of the TFT substrate.

Abstract: To provide a CxNyHz film of high density and a deposition method. One aspect of the present invention is a CxNyHz film formed on a substrate to be deposited, wherein x, y and z satisfy formulae (1) to (4) below: 0.4<x<0.7??(1) 0.01<y<0.5??(2) 0?z<0.3??(3) x+y+z=1.

Abstract: To provide a CxNyHz film of high density and a deposition method. One aspect of the present invention is a CxNyHz film formed on a substrate to be deposited, wherein x, y and z satisfy formulae (1) to (4) below: 0.4<x<0.7??(1) 0.01<y<0.5??(2) 0?z<0.3??(3) x+y+z=1.

Abstract: A method for manufacturing a ferroelectric film including the steps of forming a burnable material film containing hydrogen of not less than 1% by weight on a substrate; forming an amorphous thin film including a ferroelectric material on the burnable material film; and oxidizing and crystallizing the amorphous thin film while supplying hydrogen to the amorphous thin film by burning the burnable material film through heating of the burnable material film and the amorphous thin film in an oxygen atmosphere, to thereby form a first ferroelectric film on the substrate.

Abstract: To provide a plasma CVD device capable of increasing voltage VDC that is a DC component generated at the electrode during high-frequency discharge in CVD deposition. The plasma CVD device according to the present invention includes a chamber 1, a holding electrode 2 disposed in the interior of the chamber and adapted for holding a substrate on which a film is to be deposited, a high frequency power supply 8 connected electrically with the holding electrode, a counter electrode 12 disposed opposite to the substrate on which a film is to be deposited held by the holding electrode and connected with an earth power supply or a float power supply, a raw material gas supply mechanism for supplying a raw material gas into a space 13 between the counter electrode and the holding electrode, and an evacuation mechanism for evacuating the interior of the chamber, wherein the surface area “a” of the holding electrode and the surface area “b” of the counter electrode satisfy a formula below, b/a?2.