Abstract: An imprint method for imprinting a pattern of a mold onto a resin material on a substrate. The imprint method includes a step of forming a processed area in which an imprint pattern corresponding to the pattern of the mold is formed, and an outside area formed of a periphery of the processed area, by bringing the mold into contact with the resin material formed on the substrate, so that a portion of the resin material is extruded from the processed area into the outside area, a step of forming a protection layer for protecting the processed area, and a step of removing a layer of the resin material in the outside area, while the imprint pattern formed on a layer of the resin material in the processed area, is protected by the protection layer, so as not to be removed.

Abstract: A method for forming an etching mask comprises irradiating a focused ion beam onto a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises preparing a substrate, irradiating a focused ion beam onto a surface of the substrate and forming an etching mask including an ion-containing portion in the irradiated region, and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.

Abstract: Provided is a continuous-type charge deflection liquid ejection head that is suitable for higher-density and multiple nozzles. This liquid ejection head includes: an orifice plate having a plurality of nozzles arranged in a two-dimensional manner; a charging electrode plate having a charging electrode to charge ink droplets from each of the plurality of nozzles; and first and second deflection electrode plates each having a deflection electrode to deflect each of the ink droplets charged by the charging electrode, in which each of the charging member, the first deflection member, and the second deflection member has through-holes that ink droplets pass through, and the charging member, the first deflection member, and the second deflection member are laminated in this order in an ejecting direction of the ink droplets.

Abstract: A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 ?m tin in depth according to a predetermined line width.

Abstract: Provided is a continuous-type charge deflection liquid ejection head that is suitable for higher-density and multiple nozzles. This liquid ejection head includes: an orifice plate having a plurality of nozzles arranged in a two-dimensional manner; a charging electrode plate having a charging electrode to charge ink droplets from each of the plurality of nozzles; and first and second deflection electrode plates each having a deflection electrode to deflect each of the ink droplets charged by the charging electrode, in which each of the charging member, the first deflection member, and the second deflection member has through-holes that ink droplets pass through, and the charging member, the first deflection member, and the second deflection member are laminated in this order in an ejecting direction of the ink droplets.

Abstract: A nano structure formed on the surface of a substrate containing Si and having a pattern of at least 2 ?m in depth, in which Ga or In is contained in the surface of the pattern, and the Ga or the In has a concentration distribution that an elemental composition ratio Ga/Si or In/Si of Si and Ga or In detected by an X-ray photoelectron spectroscopy is at least 0.4 atomic percent in the depth direction of the substrate, and the maximum value of the concentration is positioned within 50 nm of the surface of the pattern.

Abstract: An imprint method for imprinting a pattern of a mold onto a resin material on a substrate. The imprint method includes a step of forming a processed area in which an imprint pattern corresponding to the pattern of the mold is formed, and an outside area formed of a periphery of the processed area, by bringing the mold into contact with the resin material formed on the substrate, so that a portion of the resin material is extruded from the processed area into the outside area, a step of forming a protection layer for protecting the processed area, and a step of removing a layer of the resin material in the outside area, while the imprint pattern formed on a layer of the resin material in the processed area, is protected by the protection layer, so as not to be removed.

Abstract: A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 ?m tin in depth according to a predetermined line width.

Abstract: An imprint method in which imprinting of a pattern of a mold onto a resin material on a substrate is repeated multiple times. The imprint method includes the steps of preparing the mold including a light blocking member at a position where the pattern is not formed, forming a pattern for the first time by bringing the mold into contact with a photocurable resin material provided on the substrate, forming a first processed area by curing the photocurable resin material by light irradiation, and removing a part of the photocurable resin material extruded from the first processed area into an outside area at a periphery of the first processed area.

Abstract: A process for forming a three-dimensional photonic crystal comprises the steps of providing a base material having a first face and a second face adjoining to each other at a first angle, forming a first mask on the first face, dry-etching the first face in a direction at a second angle to the first face to remove a portion of the base material not protected by the first mask, forming a second mask on the second face, and dry-etching the second face in a direction at a third angle to the second face to remove a portion of the base material not protected by the second mask.

Abstract: A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface.

Abstract: To provide a method of manufacturing a nano structure having a pattern of 2 ?m or more in depth formed on the surface of a substrate containing Si and a nano structure having a pattern of a high aspect and nano order. A nano structure having a pattern of 2 ?m or more in depth formed on the surface of a substrate containing Si, wherein the nano structure is configured to contain Ga or In on the surface of the pattern, and has the maximum value of the concentration of the Ga or the In positioned within 50 nm of the surface of the pattern in the depth direction of the substrate. Further, its manufacturing method is configured such that the surface of the substrate containing Si is irradiated with a focused Ga ion or In ion beam, and the Ga ions or the In ions are injected, while sputtering away the surface of the substrate, and a layer containing Ga or In is formed on the surface of the substrate, and with this layer taken as an etching mask, a dry etching is performed.

Abstract: A charged beam processing apparatus for processing an object to form structures on the object includes a processing chamber, a multi-charged beam optical system configured to generate a plurality of charged beams, and to converge and to deflect the plurality of charged beams to irradiate the object in the processing chamber with the plurality of charged beams, and a supply port configured to supply a gas into the processing chamber. The multi-charged beam optical system includes (i) a lens array, and (ii) a pattern forming plate configured to select a portion of the lens array to be used to form the structures. The charged beam processing apparatus includes a controller configured to control an exchange of the pattern forming plate in accordance with an arrangement pattern of the structures to be formed on the object.

Abstract: A photonic crystal structure is provided the optical characteristics of which vary periodically in at least one direction, wherein the base material of the photonic crystal structure is formed of a dielectric material, a region containing at least one of molecules, atoms and ions different from the constituent element of the base material is provided in the base material, and the region is arranged in the base material so that the density of one of the molecules, atoms and ions varies periodically in the one direction.

Abstract: A process for producing a three-dimensional photonic crystal comprises the steps of providing a base material having first and second faces adjoining together at a first angle; forming a first mask on the first face; forming fine holes in the base material by dry-etching on the first face in a direction at a second angle to the first face; forming a second mask on the second face; and forming fine holes in the base material by dry-etching on the second face in a direction at a third angle to the second face; the first mask and the second mask, being formed by implantation of ions by a focused ion beam onto the surface layer of the mask formation face of the base material.

Abstract: A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface.

Abstract: A method for forming an etching mask comprises the steps of: irradiating focus ion beam to a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises the steps of: preparing a substrate; irradiating focus ion beam to a surface of the substrate and forming an etching mask including an ion containing portion in the irradiated region; and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.

Abstract: A charged beam processing apparatus including a multi charged beam optical system which converges a plurality of charged beams by a lens and deflects the plurality of charged beams by a deflector to irradiate an object to be processed in a processing chamber, and a supply unit which supplies a gas into the processing chamber, includes a gas controller which controls the gas to be supplied into the processing chamber based on a processing condition, and a beam controller which controls the plurality of charged beams based on the processing condition, wherein at least one of material deposition on the surface of the object and etching of the surface of the object forms a structure.

Abstract: A process for forming a three-dimensional photonic crystal comprises the steps of providing a base material having a first face and a second face adjoining to each other at a first angle, forming a first mask on the first face, dry-etching the first face in a direction at a second angle to the first face to remove a portion of the base material not protected by the first mask, forming a second mask on the second face, and dry-etching the second face in a direction at a third angle to the second face to remove a portion of the base material not protected by the second mask.

Abstract: A charged-particle beam exposure apparatus includes a charged-particle beam source for emitting a charged-particle beam, an electrooptic system array which has a plurality of electron lenses and forms a plurality of intermediate images of the charged-particle beam source by the plurality of electron lenses, and a projection electrooptic system for projecting on a substrate the plurality of intermediate images formed by the electrooptic system array. The electrooptic system array includes at least two electrodes arranged along paths of a plurality of charged-particle beams, each of the at least two electrodes having a plurality of apertures on the paths of the plurality of charged-particle beams, and a shield electrode which is interposed between the at least two electrodes and has a plurality of shields corresponding to the respective paths of the plurality of charged-particle beams.