Patents by Inventor Haruki Nojo
Haruki Nojo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10723916Abstract: The present invention relates to an organic film CMP slurry composition for polishing an organic film, which includes at least either of a polar solvent or a non-polar solvent and a metal oxide abrasive, is acidic, and has a carbon content of around 50 to 95 atm %, and a polishing method using the same.Type: GrantFiled: August 10, 2018Date of Patent: July 28, 2020Assignee: Samsung SDI Co., Ltd.Inventors: Jung Min Choi, Haruki Nojo, Yong Soon Park, Yong Sik Yoo, Dong Hun Kang, Go Un Kim, Tae Wan Kim
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Publication number: 20180362807Abstract: The present invention relates to an organic film CMP slurry composition for polishing an organic film, which includes at least either of a polar solvent or a non-polar solvent and a metal oxide abrasive, is acidic, and has a carbon content of around 50 to 95 atm %, and a polishing method using the same.Type: ApplicationFiled: August 10, 2018Publication date: December 20, 2018Inventors: Jung Min CHOI, Haruki NOJO, Yong Soon PARK, Yong Sik YOO, Dong Hun KANG, Go Un KIM, Tae Wan KIM
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Patent number: 9676966Abstract: To provide a polishing slurry composition which effectively reduces the occurrence of scratches, and a method of polishing which reduces the occurrence of scratches while realizing an economical polishing step. The aforementioned object is attained by using a polishing slurry composition for polishing a semiconductor substrate containing a metal oxide particle, at least one water-soluble organic polymer and water, said slurry composition characterized in that, when a test substrate having a metal film, a shallow trench isolation film or dielectric film is polished by varying a rate of a polishing pad equipped in a polishing apparatus under a constant polishing pressure to achieve a maximum polishing rate.Type: GrantFiled: November 13, 2003Date of Patent: June 13, 2017Assignee: Air Products and Chemicals, Inc.Inventors: Haruki Nojo, Akitoshi Yoshida, Hirofumi Kashihara, Pascal Berar
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Publication number: 20160068711Abstract: The present invention relates to an organic film CMP slurry composition for polishing an organic film, which includes at least either of a polar solvent or a non-polar solvent and a metal oxide abrasive, is acidic, and has a carbon content of around 50 to 95 atm %, and a polishing method using the same.Type: ApplicationFiled: April 17, 2014Publication date: March 10, 2016Applicant: Samsung SDI Co., Ltd.Inventors: Jung Min CHOI, Haruki NOJO, Yong Soon PARK, Yong Sik YOO, Dong Hun KANG, Go Un KIM, Tae Wan KIM
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Publication number: 20150259575Abstract: A polishing composition of the invention is a polishing composition which is suitable for polishing a metal film, which is so-called final polishing, and contains colloidal silica having an average particle size of 20 nm or more and less than 80 nm which is determined by particle size distribution measurement using a light scattering method as abrasive grains; and at least one selected from iodic acid and its salt as an oxidizing agent, with the balance of water. By containing such components, the polishing composition shows nonselectivity, while being sufficiently suppressed in dishing and erosion.Type: ApplicationFiled: June 1, 2015Publication date: September 17, 2015Inventors: Rika TANAKA, Haruki NOJO, Yoshiharu OTA
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Patent number: 8540894Abstract: A polishing composition that can improve polishing property without foaming is provided. A polishing composition includes a pH regulator, a water-soluble polymer compound, and a compound containing an alkylene diamine structure having two nitrogens represented by the following general formula (1), and having at least one block type polyether bonded to the two nitrogens of the alkylene structure, the block type polyether having a bond of an oxyethylene group and an oxypropylene group: where R represents an alkylene group represented by CnH2n, in which n is an integer of 1 or more.Type: GrantFiled: September 29, 2008Date of Patent: September 24, 2013Assignee: Nitta Haas IncorporatedInventors: Takayuki Matsushita, Masashi Teramoto, Haruki Nojo
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Patent number: 7968465Abstract: A method of polishing a semiconductor substrate surface having at least one ruthenium feature thereon and at least one dielectric material, wherein the substrate is contacted with an aqueous composition containing from about 0.0005 to about 1 moles/kilogram of periodic acid, from about 0.2% to about 6% % by weight of silica abrasive having an average particle size of about 50 nm or less, and an amine in an amount sufficient to adjust the pH of the composition to between about 2.5 and 7. The removal selectivity of the ruthenium to a. low-K dielectric is greater than 20:1. Advantageously, the substrate further has a tantalum-containing compound, and the polishing rate of the tantalum-containing compound is about the same as the polishing rate of the ruthenium, so that the polishing process is a one-step process.Type: GrantFiled: August 12, 2004Date of Patent: June 28, 2011Assignee: DuPont Air Products NanoMaterials LLCInventors: Robert J. Small, Haruki Nojo, Kenichi Orui, Steve Masami Aragaki, Atsushi Hayashida
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Publication number: 20100294983Abstract: A polishing composition that can improve polishing property without foaming is provided. A polishing composition includes a pH regulator, a water-soluble polymer compound, and a compound containing an alkylene diamine structure having two nitrogens represented by the following general formula (1), and having at least one block type polyether bonded to the two nitrogens of the alkylene structure, the block type polyether having a bond of an oxyethylene group and an oxypropylene group: where R represents an alkylene group represented by CnH2n, in which n is an integer of 1 or more.Type: ApplicationFiled: September 29, 2008Publication date: November 25, 2010Inventors: Takayuki Matsushita, Masashi Teramoto, Haruki Nojo
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Publication number: 20100163787Abstract: A polishing composition of the invention is a polishing composition which is suitable for polishing a metal film, which is so-called final polishing, and contains colloidal silica having an average particle size of 20 nm or more and less than 80 nm which is determined by particle size distribution measurement using a light scattering method as abrasive grains; and at least one selected from iodic acid and its salt as an oxidizing agent, with the balance of water. By containing such components, the polishing composition shows non-selectivity, while being sufficiently suppressed in dishing and erosion.Type: ApplicationFiled: June 9, 2008Publication date: July 1, 2010Inventors: Rika Tanaka, Haruki Nojo, Yoshiharu Ota
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Publication number: 20090197412Abstract: To provide a polishing slurry composition which effectively reduces the occurrence of scratches, and a method of polishing which reduces the occurrence of scratches while realizing an economical polishing step. The aforementioned object is attained by using a polishing slurry composition for polishing a semiconductor substrate containing a metal oxide particle, at least one water-soluble organic polymer and water, said slurry composition characterized in that, when a test substrate having a metal film, a shallow trench isolation film or dielectric film is polished by varying a rate of a polishing pad equipped in a polishing apparatus under a constant polishing pressure to achieve a maximum polishing rate.Type: ApplicationFiled: November 13, 2003Publication date: August 6, 2009Inventors: Haruki Nojo, Akitoshi Yoshida, Hirofumi Kashihara, Pascal Berar
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Publication number: 20080038995Abstract: A method of polishing a semiconductor substrate surface having at least one ruthenium feature thereon and at least one dielectric material, wherein the substrate is contacted with an aqueous composition containing from about 0.0005 to about 1 moles/kilogram of periodic acid, from about 0.2% to about 6% % by weight of silica abrasive having an average particle size of about 50 nm or less, and an amine in an amount sufficient to adjust the pH of the composition to between about 2.5 and 7. The removal selectivity of the ruthenium to a.low-K dielectric is greater than 20:1. Advantageously, the substrate further has a tantalum-containing compound, and the polishing rate of the tantalum-containing compound is about the same as the polishing rate of the ruthenium, so that the polishing process is a one-step process.Type: ApplicationFiled: August 12, 2004Publication date: February 14, 2008Inventors: Robert J. Small, Haruki Nojo, Kenichi Orui, Steve Masami Aragaki, Atsushi Hayashida
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Patent number: 7316976Abstract: The present invention relates generally to compositions and associated methods for chemical-mechanical polishing of substrate surfaces having at least one feature thereon comprising tungsten and at least one feature thereon comprising a dielectric material. The compositions and associated methods of the invention result in similar removal rates of both the tungsten and the dielectric material. Compositions used in the methods of the present invention typically have a pH from about 1.5 to about 3.5 and comprise periodic acid and colloidal silica.Type: GrantFiled: May 19, 2005Date of Patent: January 8, 2008Assignee: DuPont Air Products NanoMaterials LLCInventors: Haruki Nojo, Yoshibumi Suzuki
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Publication number: 20070084828Abstract: A polishing composition for a semiconductor substrate comprising dihydroxyethylglycine, ceria particles, a dispersant, and an aqueous medium, wherein the ceria particles are contained in an amount of from 2 to 22% by weight of the polishing composition, and the dispersant is contained in an amount of from 0.001 to 1.0% by weight of the polishing composition; a polishing process of a semiconductor substrate with the polishing composition for a semiconductor substrate; and a method for manufacturing a semiconductor device including the step of polishing a substrate to be polished in accordance with the polishing process. The polishing composition is used, for example, for the steps of subjecting to shallow trench isolation, subjecting an interlayer dielectric to planarization, forming an embedded metal line, forming an embedded capacitor, and the like.Type: ApplicationFiled: October 12, 2006Publication date: April 19, 2007Inventors: Yasuhiro Yoneda, Mami Shirota, Haruki Nojo, Hirofumi Kashihara
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Publication number: 20060037942Abstract: A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming a surface of a capacitor using the slurry. The slurry may include an abrasive, an oxidizer, and at least one pH controller to control a pH of the slurry.Type: ApplicationFiled: June 30, 2005Publication date: February 23, 2006Inventors: Seong-Kyu Yun, Kenichi Orui, Chang-Ki Hong, Jae-Dong Lee, Sung-Jun Kim, Haruki Nojo
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Publication number: 20050258139Abstract: The present invention relates generally to compositions and associated methods for chemical-mechanical polishing of substrate surfaces having at least one feature thereon comprising tungsten and at least one feature thereon comprising a dielectric material. The compositions and associated methods of the invention result in similar removal rates of both the tungsten and the dielectric material. Compositions used in the methods of the present invention typically have a pH from about 1.5 to about 3.5 and comprise periodic acid and colloidal silica.Type: ApplicationFiled: May 19, 2005Publication date: November 24, 2005Inventors: Haruki Nojo, Yoshibumi Suzuki
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Patent number: 6827752Abstract: A problem to be solved is to provide a slurry that is capable of flattening an uneven film on a substrate with good precision, and that has good stability, not separating into two layers, solidifying through flocculated settling or undergoing changes in viscosity. This problem is solved by adding poly ammonium acrylates having different degrees of neutralization to one another as surfactants to a cerium oxide slurry containing cerium oxide particles, and suitably adjusting the total amount of polyacrylates added.Type: GrantFiled: March 12, 2003Date of Patent: December 7, 2004Assignee: EKC Technology K.K.Inventors: Haruki Nojo, Akitoshi Yoshida, Pascal Berar
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Publication number: 20040116315Abstract: This invention provides a liquid composition for cleaning a hydrophobic substrate which is used for cleaning a substrate having a surface area on which a water droplet exhibits a contact angle of 60° or more, comprising a phosphonic acid chelating agent having at least two phosphonic groups in one molecule and a polyoxyalkylene alkyl ether type of nonionic surfactant, wherein a droplet of the liquid composition or a dilute aqueous solution thereof exhibits a contact angle of 50° or less to the surface area.Type: ApplicationFiled: November 21, 2003Publication date: June 17, 2004Applicants: NEC ELECTRONICS CORPORATION, EKC TECHNOLOGY K.K.Inventors: Hidemitsu Aoki, Hiroaki Tomimori, Yoshiko Kasama, Haruki Nojo
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Publication number: 20030182868Abstract: A problem to be solved is to provide a slurry that is capable of flattening an uneven film on a substrate with good precision, and that has good stability, not separating into two layers, solidifying through flocculated settling or undergoing changes in viscosity. This problem is solved by adding poly ammonium acrylates having different degrees of neutralization to one another as surfactants to a cerium oxide slurry containing cerium oxide particles, and suitably adjusting the total amount of polyacrylates added.Type: ApplicationFiled: March 12, 2003Publication date: October 2, 2003Inventors: Haruki Nojo, Akitoshi Yoshida, Pascal Berar
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Patent number: 6443811Abstract: An aqueous based ceria slurry system and method for chemical mechanical polishing of semiconductor wafers, the slurry comprising less than 5 wt % abrasive cerium oxide particles and up to about the critical micelle concentration of a cationic surfactant, absent other abrasives, in a neutral to alkaline pH solution is disclosed. Also disclosed is slurry comprising a blend of surfactants including a pre-existing amount of anionic surfactant and an added amount of cationic and/or non-ionic surfactant.Type: GrantFiled: June 20, 2000Date of Patent: September 3, 2002Assignees: Infineon Technologies AG, Internation Business Machines Corporation, Kabushiki Kaisha ToshibaInventors: Haruki Nojo, Sumit Pandey, Jeremy Stephens, Ravikumar Ramachandran
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Patent number: 6419557Abstract: A polishing method including applying a polishing agent containing polishing grains and a surfactant onto an oxide film, which is formed on a substrate having a depressed portion and a protruding portion, wherein the surfactant is an organic compound including at least one hydrophilic group selected from the group consisting of COOH, COOM1, wherein M1 represents an atom or a functional group which can form a salt when substituted for a hydrogen atom of a carboxyl group, SO3H and SO3M2, wherein M2 represents an atom or a functional group which can form a salt when substituted for a hydrogen atom of a sulfo group; and polishing the film until the film is flattened without the occurrence of dishing.Type: GrantFiled: April 16, 2001Date of Patent: July 16, 2002Assignee: Kabushiki Kaisha ToshibaInventors: Haruki Nojo, Rempei Nakata, Masako Kodera, Nobuo Hayasaka