Abstract: Provided is an assembling apparatus for a semiconductor manufacturing apparatus. The assembling apparatus includes: a body; lift attached to the body and configured to move a reaction tube having an opening at a lower end portion thereof vertically, thereby allowing a gas supply pipe to be installed inside the reaction tube through the opening while the reaction tube is held by the lift; gas supply source configured to supply a gas into the reaction tube through the gas supply pipe while the reaction tube is held by the lift; and an exhaust mechanism including a pump configured to exhaust an inside of the reaction tube through the opening, thereby performing a leakage test of the reaction tube while the reaction tube is held by the lift.

Abstract: A method for conveying a reaction tube unit including a vertical reaction tube and a gas supply pipe provided at a distance from an inner wall of the vertical reaction tube along a longitudinal direction thereof, the method includes: arranging a buffer inside the reaction tube between the inner wall and the gas supply pipe to alleviate a collision; placing the reaction tube unit attached with the buffer on a carriage via a vibration isolator; and conveying the reaction tube unit by moving the carriage.

Abstract: A method for conveying a reaction tube unit including a vertical reaction tube and a gas supply pipe provided at a distance from an inner wall of the vertical reaction tube along a longitudinal direction thereof, the method includes: arranging a buffer inside the reaction tube between the inner wall and the gas supply pipe to alleviate a collision; placing the reaction tube unit attached with the buffer on a carriage via a vibration isolator; and conveying the reaction tube unit by moving the carriage.

Abstract: Provided is an assembling apparatus for a semiconductor manufacturing apparatus. The assembling apparatus includes: a body; lift attached to the body and configured to move a reaction tube having an opening at a lower end portion thereof vertically, thereby allowing a gas supply pipe to be installed inside the reaction tube through the opening while the reaction tube is held by the lift; gas supply source configured to supply a gas into the reaction tube through the gas supply pipe while the reaction tube is held by the lift; and an exhaust mechanism including a pump configured to exhaust an inside of the reaction tube through the opening, thereby performing a leakage test of the reaction tube while the reaction tube is held by the lift.

Abstract: Provided is a film forming apparatus for forming a film on a substrate maintained within a film forming container by supplying a raw material gas to the substrate. The film forming container includes a substrate maintaining unit, a supply mechanism configured to include a supply pipe with supply holes formed thereon to supply a raw material gas to the interior of the film forming container through the supply holes, an exhaust mechanism configured to include an exhaust pipe with exhaust holes formed thereon to exhaust gas from the interior of the film forming container through the exhaust holes, and a controller configured to control the substrate maintaining unit, the supply mechanism, and the exhaust mechanism. The supply holes and the exhaust holes are formed to face each other with the substrate maintained in the substrate maintaining unit interposed therebetween.

Abstract: Provided is a film forming apparatus for forming a film on a substrate maintained within a film forming container by supplying a raw material gas to the substrate. The film forming container includes a substrate maintaining unit, a supply mechanism configured to include a supply pipe with supply holes formed thereon to supply a raw material gas to the interior of the film forming container through the supply holes, an exhaust mechanism configured to include an exhaust pipe with exhaust holes formed thereon to exhaust gas from the interior of the film forming container through the exhaust holes, and a controller configured to control the substrate maintaining unit, the supply mechanism, and the exhaust mechanism. The supply holes and the exhaust holes are formed to face each other with the substrate maintained in the substrate maintaining unit interposed therebetween.

Abstract: Provided is a film forming apparatus for forming a polyimide film on a substrate by supplying a first raw material gas formed as aromatic acid dianhydride and a second raw material gas formed as aromatic diamine to the substrate maintained within a film forming container, and thermally polymerizing the supplied first and second raw material gases on a surface of the substrate. The apparatus includes: a substrate maintaining unit within the film forming container; a substrate heating unit configured to heat the substrate; a supply mechanism within the film forming container, configured to include a supply pipe with supply holes for supplying the first and second raw material gases to the interior of the film forming container through the supply holes; and a controller configured to control the substrate maintaining unit, the substrate heating unit, and the supply mechanism.

Abstract: A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2×10?3 g/cm3 or less.

Abstract: A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2×10?3 g/cm3 or less.

Abstract: A supply system in a heat-treating apparatus for a semiconductor process has a combustor (12), heating unit (13), and gas distributor (14). The combustor (12) has a combustion chamber (59) disposed outside a process chamber (21). The combustor (12) generates water vapor by reaction of hydrogen gas and oxygen gas in the combustion chamber (59), and supplies it to the process chamber (21). The heating unit (13) has a heating chamber (61) disposed outside the process chamber (21). The heating unit (13) selectively heats a gas not passing through the combustion chamber (59) to a temperature not lower than an activating temperature of the gas, and supplies it to the process chamber (21). The gas distributor (14) selectively supplies the hydrogen gas and oxygen gas to the combustion chamber (59), and selectively supplies a reactive gas and inactive gas to the heating chamber (61).

Abstract: A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2×10?3 g/cm3 or less.

Abstract: A supply system in a heat-treating apparatus for a semiconductor process has a combustor (12), heating unit (13), and gas distributor (14). The combustor (12) has a combustion chamber (59) disposed outside a process chamber (21). The combustor (12) generates water vapor by reaction of hydrogen gas and oxygen gas in the combustion chamber (59), and supplies it to the process chamber (21). The heating unit (13) has a heating chamber (61) disposed outside the process chamber (21). The heating unit (13) selectively heats a gas not passing through the combustion chamber (59) to a temperature not lower than an activating temperature of the gas, and supplies it to the process chamber (21). The gas distributor (14) selectively supplies the hydrogen gas and oxygen gas to the combustion chamber (59), and selectively supplies a reactive gas and inactive gas to the heating chamber (61).

Abstract: A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2×10−3 g/cm3 or less.

Abstract: The fluid heating apparatus, in accordance with the present invention, developed to solve the technological problems described above is characterized by comprising at least a heating tube heating fluid to be supplied from fluid supply source, a heater section spirally formed on an outer periphery of the heating tube and a housing accommodating the heating tube and the heater section, wherein the heater section comprises a carbon wire heating element and a quartz glass tube in which the carbon wire heating element is enclosed.

Abstract: The fluid heating apparatus, in accordance with the present invention, developed to solve the technological problems described above is characterized by comprising at least a heating tube heating fluid to be supplied from fluid supply source, a heater section spirally formed on an outer periphery of the heating tube and a housing accommodating the heating tube and the heater section, wherein the heater section comprises a carbon wire heating element and a quartz glass tube in which the carbon wire heating element is enclosed.