Patents by Inventor Haruo Nakayama
Haruo Nakayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7263427Abstract: A failed manifold pressure sensor is identified in a control apparatus having two manifold pressure detecting systems as a failsafe. A first comparing unit outputs an abnormal signal when a difference ?P between manifold pressures PMa and PMb detected respectively by two sensors is larger than a threshold value DP. A manifold pressure estimating unit estimates the manifold pressure from the engine revolution Ne, a throttle opening PLP, and an atmospheric pressure PAa. The difference calculating unit calculates a difference ?PMb between the detected manifold pressure PMb and the estimated manifold pressure PMcal. The difference calculating unit calculates a difference ?PMa between the detected manifold pressure PMa and the estimated manifold pressure PMcal. A second comparing unit compares the difference ?PMa and the difference ?PMb in response to the aforementioned abnormal signal. The failed manifold pressure sensor is specified according to which one of the difference ?PMa and the difference ?PMb is larger.Type: GrantFiled: February 13, 2006Date of Patent: August 28, 2007Assignee: Honda Motor Co., Ltd.Inventors: Shumpei Hasegawa, Takashi Sasaki, Haruo Nakayama
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Publication number: 20060184308Abstract: A failed manifold pressure sensor is identified in a control apparatus having two manifold pressure detecting systems as a failsafe. A first comparing unit outputs an abnormal signal when a difference ?P between manifold pressures PMa and PMb detected respectively by two sensors is larger than a threshold value DP. A manifold pressure estimating unit estimates the manifold pressure from the engine revolution Ne, a throttle opening PLP, and an atmospheric pressure PAa. The difference calculating unit calculates a difference ?PMb between the detected manifold pressure PMb and the estimated manifold pressure PMcal. The difference calculating unit calculates a difference ?PMa between the detected manifold pressure PMa and the estimated manifold pressure PMcal. A second comparing unit compares the difference ?PMa and the difference ?PMb in response to the aforementioned abnormal signal. The failed manifold pressure sensor is specified according to which one of the difference ?PMa and the difference ?PMb is larger.Type: ApplicationFiled: February 13, 2006Publication date: August 17, 2006Applicant: HONDA MOTOR CO., LTD.Inventors: Shumpei Hasegawa, Takashi Sasaki, Haruo Nakayama
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Patent number: 5807454Abstract: A leading edge structure for an aircraft has an outer wall, an inner wall disposed within the outer wall and including a partition with, the outer wall, the inner wall and the partition jointly defining a hot-air chamber, and a plurality of flow-rectifying fins or disposed in the hot-air chamber and compartmentalizing the hot-air chamber into a plurality of hot-air passages. The outer wall and the flow-rectifying fins are made of a fiber-reinforced synthetic resin and joined to each other by curing. The inner wall and the partition comprise a single component which is made of a fiber-reinforced synthetic resin, and being bonded to the outer wall. Alternatively, the inner wall and the partition are separate from each other and are joined to each other.Type: GrantFiled: September 4, 1996Date of Patent: September 15, 1998Assignee: Honda Giken Kogyo Kabushiki KaishaInventors: Shun Kawabe, Keiichi Sato, Daiya Yamashita, Haruo Nakayama, Koji Shiraishi, Keizo Matsumoto
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Patent number: 5565697Abstract: A semiconductor substrate comprises a foundation, a semiconductor monocrystalline film formed on the foundation, and a high-melting-point metal film or a high-melting-point metal alloy film disposed in at least part of a region between the semiconductor monocrystalline film and the foundation. The high-melting-point metal film disposed below the semiconductor monocrystalline film can be utilized as a conductor in a semiconductor device.Type: GrantFiled: June 2, 1995Date of Patent: October 15, 1996Assignee: Ricoh Company, Ltd.Inventors: Toshifumi Asakawa, Daisuke Kosaka, Haruo Nakayama
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Patent number: 5459346Abstract: A semiconductor substrate comprises a foundation, a semiconductor monocrystalline film formed on the foundation, and a high-melting-point metal film or a high-melting-point metal alloy film disposed in at least part of a region between the semiconductor monocrystalline film and the foundation. The high-melting-point metal film disposed below the semiconductor monocrystalline film can be utilized as a conductor in a semiconductor device.Type: GrantFiled: November 17, 1994Date of Patent: October 17, 1995Assignee: Ricoh Co., Ltd.Inventors: Toshifumi Asakawa, Daisuke Kosaka, Haruo Nakayama
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Patent number: 5197016Abstract: A computer-aided system and method is disclosed for designing an application specific integrated circuit (ASIC) whose intended function is implemented both by a hardware subsystem including hardware elements on the integrated circuit and by a software subsystem including a general purpose microprocessor also on the integrated circuit. The system also generates software instructions for use by the software subsystem. The system utilizes a knowledge based expert system, with a knowledge base extracted from expert ASIC designers, and thus makes it possible for ASIC's to be designed and provided quickly and economically by persons not having the highly specialized skill of an ASIC designer.Type: GrantFiled: July 14, 1989Date of Patent: March 23, 1993Assignees: International Chip Corporation, Ricoh Company, Ltd.Inventors: Tai Sugimoto, Hideaki Kobayashi, Masahiro Shindo, Haruo Nakayama
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Patent number: 5173446Abstract: A semiconductor substrate comprises a foundation, a semiconductor monocrystalline film formed on the foundation, and a high-melting-point metal film or a high-melting-point metal alloy film disposed in at least part of a region between the semiconductor monocrystalline film and the foundation. The high-melting-point metal film disposed below the semiconductor monocrystalline film can be utilized as a conductor in a semiconductor device.Type: GrantFiled: June 13, 1991Date of Patent: December 22, 1992Assignee: Ricoh Company, Ltd.Inventors: Toshifumi Asakawa, Daisuke Kosaka, Haruo Nakayama
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Patent number: 5008554Abstract: An optical signal processing apparatus includes a plurality of plates disposed in parallel at spatial intervals and light LSIs mounted on each of the plates. The transfer of signals in the direction parallel to the surfaces of the plates is performed by lead wires electrically interconnecting the light LSIs. The transfer of signals in the direction normal to the surfaces is performed by the light emitted and received by the light LSIs.Type: GrantFiled: June 29, 1989Date of Patent: April 16, 1991Assignee: Ricoh Company, Ltd.Inventors: Toshifumi Asakawa, Haruo Nakayama
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Patent number: 4825113Abstract: A single transmission line bidirectional optical communication system comprising a directional coupler employing a polarizing beam splitter, an optical transmitting circuit for coding the data and converting the coded data into optical signals and outputting said signals, an optical receiving circuit employing a comparator having a function of automatically establishing a threshold for converting optical input signals into electrical signals and then decoding the data, a circuit for detecting the frequency differences between the sending signals and receiving signals, and a line diagnosing circuit.The polarizing beam splitter eliminates a near-end reflected beam, and the optical receiving circuit having a function of automatically establishing a threshold eliminates a remote-end reflected beam. The line diagnosing circuit diagnoses the line condition by comparing the sending frequency and receiving frequency.Type: GrantFiled: February 9, 1987Date of Patent: April 25, 1989Assignee: Seiko Instruments Inc.Inventors: Hirochika Sato, Haruo Nakayama, Takeshi Uchiyama, Yoshihisa Hagami, Yoshiro Sato