Patents by Inventor Harutoshi TSUJI

Harutoshi TSUJI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230005800
    Abstract: A semiconductor device includes: a conductive base substrate; a semiconductor chip mounted on the base substrate and having a signal pad; a frame configured to surround the semiconductor chip, to be mounted on the base substrate, and to include a step having an inner first upper surface and an outer second upper surface higher than the first upper surface in a plan view, wherein a first conductor pattern provided on the first upper surface is electrically connected to the base substrate; a capacitive component mounted on the first conductor pattern; a signal terminal mounted on the second upper surface of the frame; a first bonding wire configured to electrically connect the signal pad and an upper surface of the capacitive component; and a second bonding wire configured to electrically connect the upper surface of the capacitive component and the signal terminal.
    Type: Application
    Filed: June 7, 2022
    Publication date: January 5, 2023
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventor: Harutoshi TSUJI
  • Patent number: 11444575
    Abstract: Included are: a first power source 3 configured to output a voltage required for a first gate bias voltage for turning a power amplifier 2 to an ON state; a second power source 4 configured to output a voltage required for a second gate bias voltage for turning the power amplifier 2 to an OFF state; a changeover switch 5 connected between the first power source 3 and the power amplifier 2 and configured to supply either the first gate bias voltage or the second gate bias voltage to the power amplifier 2 by switching a state between the first power source 3 and the power amplifier 2 to either an open state or a short-circuit state on the basis of a control signal related to on-off control of the power amplifier 2; and a resistance value varying unit 15 connected between the second power source 4 and the power amplifier 2 and configured such that a resistance value thereof is variable.
    Type: Grant
    Filed: January 13, 2021
    Date of Patent: September 13, 2022
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Hideki Tango, Tatsuya Hashinaga, Harutoshi Tsuji
  • Publication number: 20210135629
    Abstract: Included are: a first power source 3 configured to output a voltage required for a first gate bias voltage for turning a power amplifier 2 to an ON state; a second power source 4 configured to output a voltage required for a second gate bias voltage for turning the power amplifier 2 to an OFF state; a changeover switch 5 connected between the first power source 3 and the power amplifier 2 and configured to supply either the first gate bias voltage or the second gate bias voltage to the power amplifier 2 by switching a state between the first power source 3 and the power amplifier 2 to either an open state or a short-circuit state on the basis of a control signal related to on-off control of the power amplifier 2; and a resistance value varying unit 15 connected between the second power source 4 and the power amplifier 2 and configured such that a resistance value thereof is variable.
    Type: Application
    Filed: January 13, 2021
    Publication date: May 6, 2021
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Hideki TANGO, Tatsuya HASHINAGA, Harutoshi TSUJI
  • Patent number: 10924064
    Abstract: Included are: a first power source 3 configured to output a voltage required for a first gate bias voltage for turning a power amplifier 2 to an ON state; a second power source 4 configured to output a voltage required for a second gate bias voltage for turning the power amplifier 2 to an OFF state; a changeover switch 5 connected between the first power source 3 and the power amplifier 2 and configured to supply either the first gate bias voltage or the second gate bias voltage to the power amplifier 2 by switching a state between the first power source 3 and the power amplifier 2 to either an open state or a short-circuit state on the basis of a control signal related to on-off control of the power amplifier 2; and a resistance value varying unit 15 connected between the second power source 4 and the power amplifier 2 and configured such that a resistance value thereof is variable.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: February 16, 2021
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Hideki Tango, Tatsuya Hashinaga, Harutoshi Tsuji
  • Publication number: 20190393840
    Abstract: Included are: a first power source 3 configured to output a voltage required for a first gate bias voltage for turning a power amplifier 2 to an ON state; a second power source 4 configured to output a voltage required for a second gate bias voltage for turning the power amplifier 2 to an OFF state; a changeover switch 5 connected between the first power source 3 and the power amplifier 2 and configured to supply either the first gate bias voltage or the second gate bias voltage to the power amplifier 2 by switching a state between the first power source 3 and the power amplifier 2 to either an open state or a short-circuit state on the basis of a control signal related to on-off control of the power amplifier 2; and a resistance value varying unit 15 connected between the second power source 4 and the power amplifier 2 and configured such that a resistance value thereof is variable.
    Type: Application
    Filed: February 22, 2017
    Publication date: December 26, 2019
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Hideki TANGO, Tatsuya HASHINAGA, Harutoshi TSUJI